Search Results - "Oszinda, T."

Novel k-restoring scheme for damaged ultra-low-k materials by Böhm, O., Leitsmann, R., Plänitz, Ph, Oszinda, T., Schaller, M., Schreiber, M.

“…[Display omitted] •From different repair chemicals bis(dimethyl)diacetoxysilane is the most effective.•Efficiency of the second reaction step depends on the…”
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High performance Cu/low-k interconnect strategy beyond 10nm logic technology by Kim, R.-H, Kim, B. H., Kim, J. N., Lee, J. J., Baek, J. M., Hwang, J. H., Hwang, J., Chang, J., Yoo, S. Y., Yim, T.-J, Chung, K.-M, Park, K. H., Oszinda, T., Kim, I. S., Lee, E. B., Nam, S. D., Jung, S., Cho, Y. W., Choi, H. J., Kim, J. S., Ahn, S. H., Park, S. H., Yoon, B. U., Ku, J.-H, Paak, S. S., Lee, N.-I, Choi, S., Kang, H.-K, Jung, E. S.

“…CVD-Ru based reflow Cu scheme demonstrates robust gap fill performance at 10nm and 7nm node equivalent patterns. Potential EM and TDDB reliability concerns…”
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Characterization of plasma damaged porous ULK SiCOH layers in aspect of changes in the diffusion behavior of solvents and repair-chemicals by Oszinda, T., Schaller, M., Fischer, D., Schulz, S.E.

“…The diffusion behavior of different solvents and repair chemicals in a porous SiCOH with pores of ~ 1,5 nm was studied. It was found for molecule with a size…”
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