Search Results - "Ostinelli, Olivier"

Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs by Han, Daxin, Ruiz, Diego C., Bonomo, Giorgio, Saranovac, Tamara, Ostinelli, Olivier, Bolognesi, Colombo R.

“…GaInAs-based Metal Oxide Semiconductor High Electron Mobility Transistors (MOS-HEMTs) can in principle combine the wide bandwidth of HEMTs to the low gate…”
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High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part I: Material and Device Characterization, DC Performance, and Simulation by Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

“…Digital electronics power consumption evolved into a major concern: at the current pace, general-purpose computing energy consumption will exceed global energy…”
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High-Speed Steep-Slope GaInAs Impact Ionization MOSFETs (I-MOS) With SS = 1.25 mV/dec-Part II: Dynamic Switching and RF Performance by Han, Daxin, Bonomo, Giorgio, Ruiz, Diego Calvo, Arabhavi, Akshay Mahadev, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

“…Part I of this work described narrow bandgap GaInAs-based I-MOS devices with a minimum steep slope <inline-formula> <tex-math notation="LaTeX">SS_{min}…”
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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications by Chevalier, Pascal, Jungemann, C., Lovblom, Rickard, Maneux, Cristell, Ostinelli, Olivier, Pawlak, Andreas, Rinaldi, Niccolo, Rucker, Holger, Wedel, Gerald, Zimmer, Thomas, Schroter, Michael, Bolognesi, Colombo R., d'Alessandro, Vincenzo, Alexandrova, Maria, Bock, Josef, Flickiger, Ralf, Fregonese, Sebastien, Heinemann, Bernd

“…This paper presents Si/SiGe:C and InP/GaAsSb HBTs which feature specific assets to address submillimeter-wave and THz applications. Process and modeling status…”
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High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz by Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Fluckiger, Ralf, Marti, Diego, Ebrahimi, Mojtaba, Ostinelli, Olivier, Bolognesi, Colombo R.

“…We report the 94 GHz large-signal load-pull performance of (0.3 × 9) μm 2 InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) in the…”
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Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) by Bolognesi, Colombo R, Quan, Wei, Arabhavi, Akshay M, Saranovac, Tamara, Flückiger, Ralf, Ostinelli, Olivier, Wen, Xin, Luisier, Mathieu

“…Double heterojunction bipolar transistors (DHBTs) are intended to extend the breakdown voltage beyond what is possible in single heterojunction bipolar…”
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InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process by Fluckiger, R., Lovblom, R., Ostinelli, O., Benedickter, H., Bolognesi, C. R.

“…We demonstrate InP/GaAsSb/InP double heterojunction bipolar transistors (HBTs) fabricated in a low-temperature planarization process based on a spin-on Teflon…”
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Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design by Guendouz, Djeber, Mukherjee, Chhandak, Deng, Marina, De Matos, Magali, Caillaud, Christophe, Bertin, Hervé, Bobin, Antoine, Vaissière, Nicolas, Mekhazni, Karim, Mallecot, Franck, Arabhavi, Akshay M., Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo, Mounaix, Patrick, Maneux, Cristell

“…Due to the continuous increase in data traffic, it is becoming imperative to develop communication systems capable of meeting the throughput requirements…”
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Uniform-Base InP/GaInAsSb DHBTs Exhibiting f/f>635/420 by Fluckiger, Ralf, Lovblom, Rickard, Alexandrova, Maria, Ostinelli, Olivier, Bolognesi, C. R.

“…Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with f MAX =636 GHz and a simultaneous f T =424 GHz were realized with a…”
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Dual Gate HEMT: Compact Cascode for Low-Noise Amplification by Bonomo, Giorgio, Ciabattini, Filippo, Saranovac, Tamara, Kostelac, Fran, Hamzeloui, Sara, Marti, Diego, Fluckizer, Ralf, Ostinelli, Olivier J. S., Bolognesi, Colombo R.

“…The present work compares single-gate (SG) and dual-gate (DG) HEMTs from a low-noise amplification perspective. Experimental results, obtained through RF and…”
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Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications by Chaudhary, Rimjhim, Arabhavi, Akshay M., Kulmer, Laurenz, Hamzeloui, Sara, Leich, Martin, Ostinelli, Olivier, Leuthold, Juerg, Bolognesi, Colombo R.

“…We report the wideband performance of uniform Type-II GaInAsSb/InP UTC-PDs for optical data communications near 300 Gbps. A wide bandwidth of…”
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With fMAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

“…We report a new InP/GaAsSb double heterojunction bipolar transistor (DHBT) emitter fin architecture with a record <inline-formula> <tex-math…”
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InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs by Ruiz, Diego C., Saranovac, Tamara, Han, Daxin, Hambitzer, Anna, Arabhavi, Akshay M., Ostinelli, Olivier, Bolognesi, C. R.

“…GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To…”
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Impact of Reduced Gate‐to‐Source Spacing on Indium Phosphide High Electron Mobility Transistor Performance by Calvo Ruiz, Diego, Han, Daxin, Bonomo, Giorgio, Saranovac, Tamara, Ostinelli, Olivier, Bolognesi, Colombo R.

“…Indium phosphide (InP)‐based high electron mobility transistors (HEMTs) with an offset gate enable higher maximum oscillation frequency (fMAX) values because…”
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Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes by Arabhavi, Akshay M., Chaudhary, Rimjhim, Fluckiger, Ralf, Marti, Diego, Hamzeloui, Sara, Ciabattini, Filippo, Quan, Wei, Leich, Martin, Ostinelli, Olivier, Bolognesi, C. R.

“…We report uniform Type-II GaInAsSb/InP UTC-PDs, and compare their performance to devices fabricated with GaAsSb uniform and graded (composition and doping)…”
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InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f MAX = 1.2 THz by Arabhavi, Akshay M., Ciabattini, Filippo, Hamzeloui, Sara, Fluckiger, Ralf, Saranovac, Tamara, Han, Daxin, Marti, Diego, Bonomo, Giorgio, Chaudhary, Rimjhim, Ostinelli, Olivier, Bolognesi, Colombo R.

“…[Formula Omitted] larger than previously reported terahertz (THz) DHBTs, representing a breakthrough in THz transistor scalability. This attractive performance…”
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A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times by Wen, Xin, Arabhavi, Akshay, Ostinelli, Olivier, Bolognesi, Colombo, Zimmer, Thomas, Maneux, Cristell, Luisier, Mathieu, Mukherjee, Chhandak, Raya, Christian, Ardouin, Bertrand, Deng, Marina, Fregonese, Sebastien, Nodjiadjim, Virginie, Riet, Muriel, Quan, Wei

“…A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction…”
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GaAsSb-Based DHBTs With a Reduced Base Access Distance and f}/f}= 503/780 GHz by Alexandrova, Maria, Flueckiger, Ralf, Lovblom, Rickard, Ostinelli, Olivier, Bolognesi, C. R.

“…We report InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with simultaneous current and power gain cutoff frequencies of f T /f MAX = 503/780…”
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Quaternary Graded-Base InP/GaInAsSb DHBTs With } / } = 547/784 GHz by Quan, Wei, Arabhavi, Akshay M., Fluckiger, Ralf, Ostinelli, Olivier, Bolognesi, C. R.

“…We report a "Type-II" metal-organic chemical vapor deposition (MOCVD)-grown compositionally graded quaternary base InP/GaInAsSb/InP double heterojunction…”
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Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance by Saranovac, Tamara, Hambitzer, Anna, Ruiz, Diego C., Ostinelli, Olivier, Bolognesi, C. R.

“…A Pt/Ti/Pt/Au gate electrode stack is commonly used in AlInAs/GaInAs/InP high electron mobility transistors due to the high Schottky barrier height of Pt on…”
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