Search Results - "Ostapchuk, T.V."

Evolution of the porous silicon sample properties in the atmospheric ambient by Dacenko, O.I, Makara, V.A, Naumenko, S.M, Ostapchuk, T.V, Rudenko, O.V, Shevchenko, V.B, Vakulenko, O.V, Boltovets, M.S

“…Evolution of the integral intensity of the photoluminescence (IIPL) of untreated and treated (48% HF etched) porous silicon (PS) samples is studied in samples…”
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Effect of boron diffusion doping of silicon on the micromechanical and luminescent properties of porous layers by Makara, V.A., Vakulenko, O.V., Dacenko, O.I., Kravchenko, V.M., Ostapchuk, T.V., Rudenko, O.V., Boltovets, M.S., Fesunenko, V.O.

“…The effect of boron diffusion on the microhardness and photoluminescent properties of porous silicon layers obtained conventionally by anode etching is…”
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