Search Results - "Ossorio, O. G."

Multilevel HfO2-based RRAM devices for low-power neuromorphic networks by Milo, V., Zambelli, C., Olivo, P., Pérez, E., K. Mahadevaiah, M., G. Ossorio, O., Wenger, Ch, Ielmini, D.

“…Training and recognition with neural networks generally require high throughput, high energy efficiency, and scalable circuits to enable artificial…”
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Controlling the intermediate conductance states in RRAM devices for synaptic applications by García, H., Ossorio, O.G., Dueñas, S., Castán, H.

“…RRAM devices are promising candidates to implement artificial synaptic devices for their use in neuromorphic systems, due to their high number or reachable…”
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Dynamics of set and reset processes on resistive switching memories by Dueñas, S., Castán, H., Ossorio, O.G., García, H.

“…In this work, we have characterized hafnium oxide based bipolar resistive switching memories (RRAM) by measuring the small-signal conductance. The samples…”
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The Role of Defects in the Resistive Switching Behavior of Ta2O5-TiO2-Based Metal–Insulator–Metal (MIM) Devices for Memory Applications by Dueñas, S., Castán, H., García, H., Ossorio, O. G., Domínguez, L. A., Seemen, H., Tamm, A., Kukli, K., Aarik, J.

“…We describe the role of defects in the resistive switching behavior of metal–insulator–metal devices based on alternating Ta 2 O 5 and TiO 2 stacks. Ruthenium…”
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes by Cruz Gonzalez, C. Santa, Sahelices, B., Jimenez, J., Ossorio, O. G., Castan, H., Gonzalez, M.B., Vinuesa, G., Duenas, S., Campabadal, F., Garcia, H.

“…A semiempirical memdiode model of resistive switching devices is proposed. This model is a modification of the quasi-static memdiode model (QMM). It is based…”
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Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices by Vinuesa, G., Ossorio, O.G., García, H., Sahelices, B., Castán, H., Dueñas, S., Kull, M., Tarre, A., Jogiaas, T., Tamm, A., Kasikov, A., Kukli, K.

“…[Display omitted] Resistive switching random access memories are being thoroughly studied as prospective non-volatile memories. In this paper, we report…”
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Low-energy inference machine with multilevel HfO2 RRAM arrays by Milo, V., Zambelli, C., Olivo, P., Perez, E., Ossorio, O. G., Wenger, Ch, Ielmini, D.

“…Recently, artificial intelligence reached impressive milestones in many machine learning tasks such as the recognition of faces, objects, and speech. These…”
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Praseodymium Content Influence on the Resistive Switching Effect of HfO2 -Based RRAM Devices by Vinuesa, G., Garcia, H., Ossorio, O. G., Garcia-Ochoa, E., Aarik, L., Kukli, K., Castan, H., Duenas, S.

“…This work studies the effect of praseodymium doping on the resistive switching properties of HfO 2 -based metal-insulator-metal devices. Samples with higher Pr…”
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices by Vinuesa, G., Garcia, H., Ossorio, O. G., Garcia-Ochoa, E., Gonzalez, M.B., Kalam, K., Kukli, K., Tamm, A., Campabadal, F., Castan, H., Duenas, S.

“…To understand the effect of the temperature on the resistive switching effect in TiN/Ti/HfO 2 /Pt metal-insulator-metal devices, current-voltage measurements…”
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Resistive Switching Properties of Atomic Layer Deposited ZrO2-HfO2 Thin Films by Ossorio, O. G., Duenas, S., Castan, H., Tamm, A., Kalam, K., Seemen, H., Kukli, K.

“…In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states…”
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Admittance memory cycles of Ta2O5-ZrO2-based RRAM devices by Duenas, S., Castan, H., Ossorio, O. G., Dominguez, L. A., Garcia, H., Kalam, K., Kukli, K., Ritala, M., Leskela, M.

“…The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were…”
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