Search Results - "Osowski, M.L."

Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits by Coleman, J.J., Lammert, R.M., Osowski, M.L., Jones, A.M.

“…The progress toward integrated photonic devices by selective-area metalorganic chemical vapor deposition (MOCVD) is reviewed. Processing steps involved with…”
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980-nm master oscillator power amplifiers with nonabsorbing mirrors by Lammert, R.M., Ungar, J.E., Osowski, M.L., Qi, H., Newkirk, M.A., Bar Chaim, N.

“…High-power master oscillator power amplifiers with nonabsorbing mirrors have been fabricated. These devices exhibit 1.0 and 1.5 W of single-frequency…”
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A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition by Osowski, M.L., Panepucci, R., Adesida, I., Coleman, J.J.

“…A single growth step ridge waveguide InGaAs-GaAs distributed feedback (DFB) QW laser with second-order Ti surface gratings is described. The Ti gratings…”
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Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings by Lammert, R.M., Hughes, J.S., Roh, S.D., Osowski, M.L., Jones, A.M., Coleman, J.J.

“…The design and operation of InGaAs-GaAs ridge-waveguide distributed Bragg reflector (DBR) single quantum-well lasers with first-order surface gratings…”
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Developing High Brightness Semiconductor Lasers for Homeland Security and Defense Applications by Rudy, P.T., Osowski, M.L., Lammert, R.M., Oh, S.W., Ocochlain, C., Panja, C., Stakelon, T., Ungar, J.E.

“…We present recent advances in high brightness, high power semiconductor lasers and their applications in homeland security and defense including…”
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A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD by Osowski, M.L., Lammert, R.M., Coleman, J.J.

“…Three-step selective-area metal-organic chemical vapor deposition (MOCVD) is used to fabricate a dual wavelength InGaAs-GaAs-AlGaAs quantum well laser source…”
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Effect of p-contact metallization on the performance of gain-coupled DFBs with oxide-defined surface gratings by Osowski, M.L., Hughes, J.S., Coleman, J.J.

“…The effect of p-contact metallization on the performance of a single-growth-step ridge waveguide InGaAs-GaAs distributed feedback (DFB) laser with a silicon…”
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MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD by Lammert, R.M., Smith, G.M., Hughes, S., Osowski, M.L., Jones, A.M., Coleman, J.J.

“…The design and operation of multiple-quantum-well (MQW) wavelength-tunable distributed Bragg reflector (DBR) InGaAs QW lasers with nonabsorbing gratings and…”
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An asymmetric cladding gain-coupled DFB laser with oxide defined metal surface grating by MOCVD by Osowski, M.L., Hughes, J.S., Lammert, R.M., Coleman, J.J.

“…A single growth step ridge waveguide InGaAs-GaAs distributed-feedback (DFB) laser with first-order silicon dioxide defined titanium surface gratings is…”
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Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers by Smith, G.M., Hughes, J.S., Lammert, R.M., Osowski, M.L., Papen, G.C., Verdeyen, J.T., Coleman, J.J.

“…Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector (RW-DBR) lasers are demonstrated with a spectral linewidth as low as 39 kHz for an…”
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The distributed Bragg pulse shaper: demonstration and model by Purchase, K.G., Brady, D.J., Roh, S.D., Lammert, R.M., Osowski, M.L., Coleman, J.J., Hughes, J.S.

“…The distributed Bragg pulse shaper (DBPS) is a series of electrically switchable Bragg mirrors on a semiconductor waveguide. The DBPS encodes data packets…”
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MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region by Lammert, R.M., Roh, S.D., Hughes, J.S., Osowski, M.L., Coleman, J.J.

“…We report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity…”
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Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD by Cockerill, T.M., Lammert, R.M., Forbes, D.V., Osowski, M.L., Coleman, J.J.

“…Selective-area epitaxy is used to fabricate a twelve-channel strained layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array suitable for…”
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InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD by Lammert, R.M., Forbes, D.V., Smith, G.M., Osowski, M.L., Coleman, J.J.

“…The design and operation of strained-layer InGaAs-GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by…”
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Wavelength-tunable asymmetric cladding ridge-waveguide distributed Bragg reflector lasers with very narrow linewidth by Smith, G.M., Hughes, J.S., Lammert, R.M., Osowski, M.L., Papen, G.C., Verdeyen, J.T., Coleman, J.J.

“…Narrow-linewidth ridge-waveguide distributed Bragg reflector (DBR) lasers with asymmetric cladding are demonstrated. This design requires only a single…”
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Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm by Roh, S.D., Hughes, J.S., Lammert, R.M., Osowski, M.L., Beernink, K.J., Papen, G.C., Coleman, J.J.

“…The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote…”
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A universal optical heterostructure for photonic integrated circuits: a case study in the AlGaAs material system by Crook, A.C., Osowski, M.L., Smith, G.M., Frame, J., Grupen, M., DeTemple, T.A.

“…An approach for the realization of a single heterostructure for multiple optical device applications in a photonic integrated circuit environment is addressed…”
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A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition by Osowski, M.L., Cockerill, T.M., Lammert, R.M., Forbes, D.V., Ackley, D.E., Coleman, J.J.

“…Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum…”
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Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD by Lammert, R.M., Mena, P.V., Forbes, D.V., Osowski, M.L., Kang, S.M., Coleman, J.J.

“…Fabrication, design, and operation of strained layer, InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes fabricated by selective-area epitaxy…”
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High-power single-mode laser diodes with tapered amplifiers by Lammert, R.M., Osowski, M.L., Elarde, V.C., Oh, S.W., Rudy, P.T., Hu, W., Stakelon, T., Vaissie, L., Ungar, J.E.

“…Both InP-based and GaAs-based high-power single-mode lasers are described. Single-mode powers of 9 W at 1064 nm and 1.2 W at 1550 nm have been achieved…”
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