Search Results - "Osiyuk, I.P."

Analysis of the electron traps at the 4H-SiC/SiO 2 interface using combined CV/thermally stimulated current measurements by Rudenko, T.E., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö., Osiyuk, I.P., Tyagulski, I.P.

“…The interface traps at the 4H-SiC/SiO 2 interface are studied using thermally stimulated current (TSC) and CV-techniques. We demonstrate that the electron…”
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Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements by RUDENKO, T. E, OLAFSSON, H. O, SVEINBJÖRNSSON, E. O, OSIYUK, I. P, TYAGULSKI, I. P

“…The interface traps at the 4H-SiC/SiO2 interface are studied using thermally stimulated current (TSC) and CV-techniques. We demonstrate that the electron traps…”
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