Search Results - "Osiyuk, I.N."

Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC by Rudenko, T.E., Osiyuk, I.N., Tyagulski, I.P., Ólafsson, H.Ö., Sveinbjörnsson, E.Ö.

“…This work presents detailed investigations of interface traps at the Si-face 4H– and 6H–SiC/SiO 2 interfaces using thermally stimulated current (TSC) and…”
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Effect of oxide–semiconductor interface traps on low-temperature operation of MOSFETs by Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N

“…Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO2 interface is responsible…”
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Reactivation of damaged rare earth luminescence centers in ion-implanted metal–oxide–silicon light emitting devices by Prucnal, S., Rebohle, L., Nazarov, A.N., Osiyuk, I.N., Tjagulskii, I.P., Skorupa, W.

“…Charge trapping and quenching of electroluminescence (EL) in SiO 2 layers implanted by Ge and rare earth (RE) ions during hot electron injection were…”
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Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layers by PRUCNAL, S, SUN, J. M, NAZAROV, A, TJAGULSKII, I. P, OSIYUK, I. N, FEDARUK, R, SKORUPA, W

“…When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (oxygen deficient…”
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Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodes by NAZAROV, A. N, OSIYUK, I. N, SUN, J. M, YANKOV, R. A, SKORUPA, W, TYAGULSKII, I. P, LYSENKO, V. S, PRUCNAL, S, GEBEL, T, REBOHLE, L

“…Combined measurements of charge trapping and electroluminescence intensity as a function of injected charge and current have been carried out with the aim of…”
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Charge trapping characterization of MOCVD HfO 2/p-Si interfaces at cryogenic temperatures by Tyagulskyy, I.P., Osiyuk, I.N., Lysenko, V.S., Nazarov, A.N., Hall, S., Buiu, O., Lu, Y., Potter, R., Chalker, P.

“…The paper focuses on the study of charge trapping processes in high- k MOS structures at cryogenic temperatures. It was shown, that there is extremely strong…”
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Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures by TYAGULSKYY, I. P, OSIYUK, I. N, LYSENKO, V. S, NAZAROV, A. N, HALL, S, BUIU, O, LU, Y, POTTER, R, CHALKER, P

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Charge trapping and degradation in Ge + ion implanted SiO 2 layers during high-field electron injection by Nazarov, A.N., Osiyuk, I.N., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W.

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The effect of radio-frequency plasma treatment on the electroluminescent properties of violet light-emitting germanium implanted metal-oxide–semiconductor structures by Nazarov, A.N., Vovk, J.N., Osiyuk, I.N., Tkachenko, A.S., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W., Yankov, R.A.

“…We have studied the effect of plasma treatment on both the electroluminescent (EL) properties of Ge-implanted light-emitting metal-oxide–silicon (MOS) devices…”
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Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection by Nazarov, A.N., Osiyuk, I.N., Lysenko, V.S., Gebel, T., Rebohle, L., Skorupa, W.

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Effect of traps in the transition Si/SiO2 layer on input characteristics of SOI transistors by Lysenko, V.S, Tyagulski, I.P, Gomeniuk, Y.V, Osiyuk, I.N

“…In this article, investigations of low-temperature operation of n-channel accumulation mode SOI MOSFET are reported. It has been shown that the charge state of…”
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Thermally activated processes in the buried oxide of SIMOX SOI structures and devices by Lysenko, V.S, Nazarov, A.N, Kilchytska, V.I, Osiyuk, I.N, Tyagulski, I.P, Gomeniuk, Yu.V, Barchuk, I.P

“…This paper is devoted to the analysis of the electrical processes in SOI SIMOX structures in a wide temperature range (from 4 to 700 K) by a combination of…”
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Electrical characterization of the amorphous SiC-pSi structure by Lysenko, V.S., Tyagulski, I.P., Gomeniuk, Y.V., Osiyuk, I.N., Mikhnov, A.K.

“…Forward and reverse currents in the amorphous SiC pSi structure were studied in the temperature range from 30 to 80 K. Charging of electron traps located in…”
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Investigation of traps in the nSiCpSi interface at cryogenic temperatures by Lysenko, V.S., Gomeniuk, Y.V., Osiyuk, I.N., Tyagulski, I.P.

“…A new method for characterisation of SiCSi interface based on measurements of thermally stimulated charge release and of thermal dielectric relaxation current…”
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Flux pinning under the strong electrostatic field in the BiPbSrCaCuO film by Lysenko, V.S., Gomeniuk, Y.V., Tyagulski, I.P., Osiyuk, I.N., Lozovski, V.Z., Varyukhin, V.N.

“…Three different regimes of thermally activated dissipation were observed in the superconducting ( (Bi,Pb) 2Sr 2Ca 2Cu 3O x film at different external magnetic…”
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