Search Results - "Osipov, V. A"
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Electrical resistivity of polycrystalline graphene: effect of grain-boundary-induced strain fields
Published in Scientific reports (25-08-2022)“…We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated…”
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2
Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)
Published in Russian journal of general chemistry (01-04-2022)“…A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main classical methods used at present to grow SiC films on silicon…”
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3
Heat capacity signature of frustrated trimerons in magnetite
Published in Scientific reports (02-07-2020)“…Recently it has been proposed that the long-range electronic order formed by trimerons in magnetite should be frustrated due to the great degeneracy of…”
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Peculiarities of Hydrocarbon Generation at Great Depths in the Crust
Published in Doklady earth sciences (01-12-2018)“…This article describes the peculiarities of hydrocarbon generation at great depths in the Earth’s crust. It is shown that all the conditions necessary for…”
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5
Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal
Published in Physics of the solid state (01-12-2019)“…The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the…”
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Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide
Published in Physics of the solid state (01-03-2019)“…— The mechanism of displacement of one close-packed SiC layer from one minimum position to another on the example of SiC polytype transition 2 H → 4 H has been…”
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Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms
Published in Semiconductors (Woodbury, N.Y.) (2022)“…— The temperature dependences of the longitudinal resistance and heat capacity of silicon-carbide epitaxial films grown on single-crystal silicon substrates by…”
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Terahertz Emission from Silicon Carbide Nanostructures
Published in Semiconductors (Woodbury, N.Y.) (01-08-2023)“…For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the…”
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Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces
Published in Semiconductors (Woodbury, N.Y.) (01-02-2021)“…A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility…”
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10
Techniques for Polytypic Transformations in Silicon Carbide
Published in Physics of the solid state (01-08-2019)“…— Two main polytype transformations in silicon carbide, namely, 2H → 6H and 3C → 6H, have been studied by ab initio methods. It has been shown that the…”
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Registration of Terahertz Irradiation with Silicon Carbide Nanostructures
Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)“…The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is…”
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Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution
Published in Physics of the solid state (01-12-2019)“…The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of…”
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13
Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates
Published in Physics of the solid state (01-09-2022)“…Consecutive stages of synthesizing epitaxial SiC films on n -type Si(111) and p -type Si(111) surfaces in a mixture of gaseous carbon monoxide and silane are…”
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14
Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution
Published in Physics of the solid state (01-03-2019)“…— A fundamentally new method of obtaining epitaxial layers of nanostructured carbon on silicon substrates has been considered. Epitaxial growth in the case of…”
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15
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy
Published in Semiconductors (Woodbury, N.Y.) (01-08-2021)“…The results of experimental studies concerned with the deposition of Ge onto the surface of AlGaAs nanowires are reported. The formation of both cubic and…”
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Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis
Published in Mechanics of solids (01-03-2020)“…The nanoindentation method was used to study the elastic properties of gallium nitride and aluminum nitride films grown on nanoscale silicon carbide on silicon…”
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Modern characteristics of the properties of meadow-boggy soils of rice agrocenosis in the republic of Adygeya
Published in E3S Web of Conferences (01-01-2021)“…In this work, changes in the composition and properties of alluvial meadow-boggy soils are considered, with prolonged use in rice crop rotation and not…”
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A study of ribonuclease activity in venom of vietnam cobra
Published in Journal of animal science and technology (25-09-2017)“…Ribonuclease (RNase) is one of the few toxic proteins that are present constantly in snake venoms of all types. However, to date this RNase is still poorly…”
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Geodynamic Conditions of Oil-and-Gas Accumulations in the Ural–Novaya Zemlya Belt
Published in Doklady earth sciences (01-07-2019)“…This paper provides a brief tectonic and geological overview of the Ural– Novaya Zemlya Forebelt of Oil-and-Gas Accumulation and describes the conditions under…”
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20
On the first Banach problem concerning condensations of absolute κ-Borel sets onto compacta
Published in Acta mathematica Hungarica (2024)“…It is consistent that the continuum be arbitrary large and no absolute κ -Borel set X of density κ , ℵ 1 < κ < c ,condenses onto a compactum. It is consistent…”
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