Search Results - "Osipov, V. A"

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  1. 1

    Electrical resistivity of polycrystalline graphene: effect of grain-boundary-induced strain fields by Krasavin, S. E., Osipov, V. A.

    Published in Scientific reports (25-08-2022)
    “…We have revealed the decisive role of grain-boundary-induced strain fields in electron scattering in polycrystalline graphene. To this end, we have formulated…”
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    Journal Article
  2. 2

    Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review) by Kukushkin, S. A., Osipov, A. V.

    Published in Russian journal of general chemistry (01-04-2022)
    “…A review of advances in the growth of SiC epitaxial films on silicon is presented. All the main classical methods used at present to grow SiC films on silicon…”
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    Journal Article
  3. 3

    Heat capacity signature of frustrated trimerons in magnetite by Sahling, S., Lorenzo, J. E., Remenyi, G., Marin, C., Katkov, V. L., Osipov, V. A.

    Published in Scientific reports (02-07-2020)
    “…Recently it has been proposed that the long-range electronic order formed by trimerons in magnetite should be frustrated due to the great degeneracy of…”
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    Journal Article
  4. 4

    Peculiarities of Hydrocarbon Generation at Great Depths in the Crust by Kerimov, V. Yu, Mustaev, R. N., Osipov, A. V.

    Published in Doklady earth sciences (01-12-2018)
    “…This article describes the peculiarities of hydrocarbon generation at great depths in the Earth’s crust. It is shown that all the conditions necessary for…”
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    Journal Article
  5. 5

    Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-12-2019)
    “…The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the…”
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  6. 6

    Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Carbide by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-03-2019)
    “…— The mechanism of displacement of one close-packed SiC layer from one minimum position to another on the example of SiC polytype transition 2 H → 4 H has been…”
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  7. 7

    Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Ugolkov, V. L.

    Published in Semiconductors (Woodbury, N.Y.) (2022)
    “…— The temperature dependences of the longitudinal resistance and heat capacity of silicon-carbide epitaxial films grown on single-crystal silicon substrates by…”
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    Journal Article
  8. 8

    Terahertz Emission from Silicon Carbide Nanostructures by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2023)
    “…For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the…”
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    Journal Article
  9. 9

    Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Romanov, V. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-02-2021)
    “…A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility…”
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  10. 10

    Techniques for Polytypic Transformations in Silicon Carbide by Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-08-2019)
    “…— Two main polytype transformations in silicon carbide, namely, 2H → 6H and 3C → 6H, have been studied by ab initio methods. It has been shown that the…”
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    Journal Article
  11. 11

    Registration of Terahertz Irradiation with Silicon Carbide Nanostructures by Bagraev, N. T., Kukushkin, S. A., Osipov, A. V., Klyachkin, L. E., Malyarenko, A. M., Khromov, V. S.

    Published in Semiconductors (Woodbury, N.Y.) (01-04-2023)
    “…The response to external terahertz (THz) irradiation from the silicon carbide nanostructures prepared by the method of substitution of atoms on silicon is…”
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    Journal Article
  12. 12

    Study of Elastic Properties of SiC Films Synthesized on Si Substrates by the Method of Atomic Substitution by Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V.

    Published in Physics of the solid state (01-12-2019)
    “…The elastic properties of nanoscale silicon carbide film grown on a silicon substrate by the method of atomic substitution were studied. The Young modulus of…”
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  13. 13

    Change in Elastic Deformations in SiC Films during Their Growth by the Coordinated Atomic Substitution Method on Si Substrates by Eremeev, Yu. A., Vorobev, M. G., Grashchenko, A. S., Semencha, A. V., Osipov, A. V., Kukushkin, S. A.

    Published in Physics of the solid state (01-09-2022)
    “…Consecutive stages of synthesizing epitaxial SiC films on n -type Si(111) and p -type Si(111) surfaces in a mixture of gaseous carbon monoxide and silane are…”
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    Journal Article
  14. 14

    Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substitution by Kukushkin, S. A., Osipov, A. V., Feoktistov, N. A.

    Published in Physics of the solid state (01-03-2019)
    “…— A fundamentally new method of obtaining epitaxial layers of nanostructured carbon on silicon substrates has been considered. Epitaxial growth in the case of…”
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  15. 15

    Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy by Ilkiv, I. V., Kotlyar, K. P., Kirilenko, D. A., Osipov, A. V., Soshnikov, I. P., Terpitsky, A. N., Cirlin, G. E.

    Published in Semiconductors (Woodbury, N.Y.) (01-08-2021)
    “…The results of experimental studies concerned with the deposition of Ge onto the surface of AlGaAs nanowires are reported. The formation of both cubic and…”
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    Journal Article
  16. 16

    Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis by Grashchenko, A. S., Kukushkin, S. A., Osipov, A. V.

    Published in Mechanics of solids (01-03-2020)
    “…The nanoindentation method was used to study the elastic properties of gallium nitride and aluminum nitride films grown on nanoscale silicon carbide on silicon…”
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    Journal Article
  17. 17

    Modern characteristics of the properties of meadow-boggy soils of rice agrocenosis in the republic of Adygeya by Chizhikov, Vitaliy, Osipov, A. V., Suminsky, Ilya, Belo, Katinda

    Published in E3S Web of Conferences (01-01-2021)
    “…In this work, changes in the composition and properties of alluvial meadow-boggy soils are considered, with prolonged use in rice crop rotation and not…”
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    Journal Article Conference Proceeding
  18. 18

    A study of ribonuclease activity in venom of vietnam cobra by Nguyen, Thiet Van, Osipov, A V

    Published in Journal of animal science and technology (25-09-2017)
    “…Ribonuclease (RNase) is one of the few toxic proteins that are present constantly in snake venoms of all types. However, to date this RNase is still poorly…”
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    Journal Article
  19. 19

    Geodynamic Conditions of Oil-and-Gas Accumulations in the Ural–Novaya Zemlya Belt by Kerimov, V. Yu, Kuznetsov, N. B., Osipov, A. V.

    Published in Doklady earth sciences (01-07-2019)
    “…This paper provides a brief tectonic and geological overview of the Ural– Novaya Zemlya Forebelt of Oil-and-Gas Accumulation and describes the conditions under…”
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    Journal Article
  20. 20

    On the first Banach problem concerning condensations of absolute κ-Borel sets onto compacta by Osipov, A. V.

    Published in Acta mathematica Hungarica (2024)
    “…It is consistent that the continuum be arbitrary large and no absolute κ -Borel set X of density κ , ℵ 1 < κ < c ,condenses onto a compactum. It is consistent…”
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