Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

Pure Co films of low resistivity and high conformality by low temperature thermal CVD/ALD using novel Co precursors

A new family of highly volatile alkylsilyl-functionality Co precursors, R 3 SiCo(CO) 4 , has been synthesized. One of them, Et 3 SiCo(CO) 4 , has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co f...

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Bibliographic Details
Published in:2017 IEEE International Interconnect Technology Conference (IITC) pp. 1 - 3
Main Authors: Rochat, Raphael, Oschchepkov, Ivan, Changhee Ko
Format: Conference Proceeding
Language:English
Published: IEEE 01-05-2017
Subjects:
Annealing
Conductivity
Inductors
Metals
Stability analysis
Thermal stability
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Summary:A new family of highly volatile alkylsilyl-functionality Co precursors, R 3 SiCo(CO) 4 , has been synthesized. One of them, Et 3 SiCo(CO) 4 , has been evaluated by low temperature thermal chemical vapor deposition (CVD) and atomic layer deposition (ALD), which gave low resistive (29 μΩ·cm) pure Co films with a good step overage. Dynamic stability test of Et 3 SiCo(CO) 4 also exhibited a better stability at 40°C and 50°C, compared to CCTBA, a conventional Co precursor.
ISSN:2380-6338
DOI:10.1109/IITC-AMC.2017.7968940