Search Results - "Orudzhev, G. S."

A first-principles study of the effect of doping and vacancy defects on the magnetic properties of ZnSnAs2:V by Jafarova, V. N., Orudzhev, G. S.

“…Ab initio study of the electronic and magnetic properties of vanadium-doped and vacancy-defected chalcopyrite semiconductor ZnSnAs 2 was carried out using…”
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Lattice dynamics of layered semiconducting compound TlGaS2 by Ulubey (Kulibekov), A. M., Hashimzade, F. M., Huseinova, D. A., Nizametdinova, M. A., Orudzhev, G. S., Allakhverdiev, K. R., Yıldız, N. T.

“…In this paper we present the results of ab initio calculations of the lattice dynamics of ternary TlGaS2 semiconductor with highly anisotropic crystal…”
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Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal by Jafarova, V. N., Orudzhev, G. S., Huseynova, S. S., Stempitsky, V. R., Baranava, M. S.

“…The electronic and magnetic properties of ZnO containing Cr doped atoms and Zn and O vacancies in its crystal structure are theoretically investigated…”
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Structural and electronic properties of ZnO: A first-principles density-functional theory study within LDA(GGA) and LDA(GGA)+U methods by Jafarova, V.N., Orudzhev, G.S.

“…In this article, the structural and electronic properties of bulk ZnO have been studied using the plane-wave-based pseudopotential density functional theory…”
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Transport properties of TlIn1-xGaxSe2 (0 < = x < = 0.3) crystals by Gojaev, E M, Orudzhev, G S, Mamedov, E M, Gyul'mamedov, K D, Nazarov, A M, Khalilova, Kh S

“…Single crystals of TlIn1-xGaxSe2 solid solutions have been grown by the Bridgman-Stockbarger method. As shown by x-ray diffraction, the solid solutions…”
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Band structure and optical properties of the TlInTe2 chain compound by Orudzhev, G. S., Godzhaev, É. M., Kerimova, R. A., Allakhyarov, É. A.

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Vacancy Formation Energy for the Charged and Neutral States of TlGaSe$_{2}$ Crystal by Ismayilova, N. A., Orudzhev, G. S.

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Band structure and permittivity of the TlGaTe2 compound by Godzhaev, É. M., Orudzhev, G. S., Kafarova, D. M.

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Ab initio investigation of the pressure influence on elastic properties of the GaS layered compound by Orudzhev, G. S., Kasumova, E. K.

“…From first principles, in the pressure range of 0–20 GPa, taking into account the structural phase transition at 3 GPa, all independent elastic constants of…”
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Effect of pressure on phonon spectra and elastic properties of orthorhombic GeSe by Gashimzade, F. M., Guseinova, D. A., Jahangirli, Z. A., Mekhtiev, B. G., Orudzhev, G. S.

“…The pressure dependences of the phonon frequencies of the Brillouin zone center and also the elastic constants of the GeSe compound have been calculated by the…”
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Lattice dynamics of layered semiconducting compound TlGaS 2 by Ulubey (Kulibekov), A. M., Hashimzade, F. M., Huseinova, D. A., Nizametdinova, M. A., Orudzhev, G. S., Allakhverdiev, K. R., Yıldız, N. T.

“…Abstract In this paper we present the results of ab initio calculations of the lattice dynamics of ternary TlGaS 2 semiconductor with highly anisotropic…”
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Lattice dynamics of layered ferroelectric semiconductor compound TlGaSe2 by Hashimzade, F.M., Huseinova, D.A., Orudzhev, G.S., Nizametdinova, M.A., Ulubey, A.M., Allakhverdiev, K.R.

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Transport properties of TlIn1−x Ga x Se2 (0 ≤ x ≤ 0.3) crystals by Gojaev, E. M., Orudzhev, G. S., Mamedov, E. M., Gyul’mamedov, K. D., Nazarov, A. M., Khalilova, Kh. S.

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The pressure dependence of the phonon spectra and elastic modulus of orthorhombic : the method of local density functional by Hashimzade, F. M, Huseinova, D. A, Jahangirli, Z. A, Mehdiyev, B. H, Orudzhev, G. S

“…The IR- and Raman-active phonon frequencies, as well as the elastic constants of orthorhombic GeSe, were calculatedas a function of hydrostatic pressure using…”
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