Memristive and neuromorphic behavior in a Li x CoO 2 nanobattery

The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herei...

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Bibliographic Details
Published in:Scientific reports Vol. 5
Main Authors: Mai, V H, Moradpour, A., Auban Senzier, P., Pasquier, C, Wang, K, Rozenberg, M. J., Giapintzakis, J., Mihailescu, C N, Ortanidou, C M, Svoukis, E, Breza, A., Lioutas, Ch. B., Franger, S., Revcolevschi, A., Maroutian, T., Lecoeur, P., Aubert, P, Agnus, G., Salot, R., A. Albouy, P., Weil, R, Alamarguy, D., March, K, Jomard, F., Chrétien, Pascal, Schneegans, O.
Format: Journal Article
Language:English
Published: Nature Publishing Group 14-01-2015
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Summary:The phenomenon of resistive switching (RS), which was initially linked to non-volatile resistive memory applications, has recently also been associated with the concept of memristors, whose adjustable multilevel resistance characteristics open up unforeseen perspectives in cognitive computing. Herein, we demonstrate that the resistance states of Li(x)CoO2 thin film-based metal-insulator-metal (MIM) solid-state cells can be tuned by sequential programming voltage pulses, and that these resistance states are dramatically dependent on the pulses input rate, hence emulating biological synapse plasticity. In addition, we identify the underlying electrochemical processes of RS in our MIM cells, which also reveal a nanobattery-like behavior, leading to the generation of electrical signals that bring an unprecedented new dimension to the connection between memristors and neuromorphic systems. Therefore, these LixCoO2-based MIM devices allow for a combination of possibilities, offering new perspectives of usage in nanoelectronics and bio-inspired neuromorphic circuits.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep07761