Search Results - "Orlova, T. A."

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  1. 1

    Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Solomnikova, A. V.

    Published in Technical physics (01-11-2023)
    “…It has been studied the morphology of the surface of the semipolar gallium nitride layers synthesized on nano-pattemed Si(100) or Si(113) substrates with a V…”
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  2. 2

    Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N.

    Published in Semiconductors (Woodbury, N.Y.) (01-10-2021)
    “…Scanning electron microscopy is used for studies of the initial stages of the formation of semipolar AlN (10 1) and AlN (10 2) layers during metal–organic…”
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  3. 3

    Biplanar Epitaxial AlN/SiC/(n, p)SiC Structures for High-Temperature Functional Electronic Devices by Panyutin, E. A., Sharofidinov, Sh. Sh, Orlova, T. A., Snytkina, S. A., Lebedev, A. A.

    Published in Technical physics (01-03-2020)
    “…We investigate the possibility of integration of epitaxial SiC and AlN technologies using opposite faces of the common SiC substrate (AlN epitaxy is performed…”
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  4. 4

    Properties of Semipolar GaN Grown on a Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Seredova, N. V., Solomnikova, A. V., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

    Published in Semiconductors (Woodbury, N.Y.) (01-07-2019)
    “…Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si x N y…”
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  5. 5

    Semipolar GaN Layers Grown on Nanostructured Si(100) Substrate by Bessolov, V. N., Konenkova, E. V., Orlova, T. A., Rodin, S. N., Shcheglov, M. P., Kibalov, D. S., Smirnov, V. K.

    Published in Technical physics letters (01-06-2018)
    “…We propose a new method for growing semipolar GaN films on a Si(100) substrate with an array of sub-100-nm-sized V-grooves formed on the surface. It is shown…”
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    Solid-particle erosion and strength degradation of Si3N4/BN fibrous monoliths by Goretta, K.C, Gutierrez-Mora, F, Chen, Nan, Routbort, J.L, Orlova, T.A, Smirnov, B.I, de Arellano-López, A.R

    Published in Wear (01-02-2004)
    “…Erosive damage was studied in Si3N4/BN fibrous monoliths (FMs) and the individual constituents of the cells and cell boundary, monolithic Si3N4 and BN…”
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    Use of the inductively coupled plasma mass spectrometry for element analysis of environmental objects by Karandashev, V. K., Turanov, A. N., Orlova, T. A., Lezhnev, A. E., Nosenko, S. V., Zolotareva, N. I., Moskvitina, I. R.

    Published in Inorganic materials (01-12-2008)
    “…Capabilities and limits of the inductively coupled plasma mass spectrometry (ICP-MS) are discussed by the examples of element analysis of natural and drinking…”
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  8. 8

    Admittance spectroscopy as a method for investigating relaxation processes in quantum-sized heterostructures by Zubkov, V. I., Yakovlev, I. N., Koucherova, O. V., Orlova, T. A.

    “…The wide possibilities of admittance spectroscopy as a tool for the effective study of relaxation processes in quantum-sized heterostructures are demonstrated…”
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  9. 9

    Long-term variability in the hydrochemical regime of the Manych-Chograi hydrological system by Matishov, D. G., Orlova, T. A., Gargopa, Yu. M., Pavel’skaya, E. V.

    Published in Water resources (01-09-2007)
    “…Data collected from the scientific literature and field studies carried out by the specialists from the Azov Branch of the Murmansk Institute of Marine Biology…”
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    Monte Carlo Simulation of the Radiation Output from a Led Structure with Textured Interfaces by Zubkov, V. I., Evseenkov, A. S., Orlova, T. A., Zubkova, A. V.

    Published in Russian physics journal (01-12-2015)
    “…A mathematical model of the radiation output from a LED structure is developed on the basis of the corpuscular Monte Carlo method. As a result of simulation of…”
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  12. 12

    The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system by Zhilyaev, Yu. V., Zelenin, V. V., Orlova, T. A., Panteleev, V. N., Poletaev, N. K., Rodin, S. N., Snytkina, S. A.

    Published in Technical physics letters (17-05-2015)
    “…We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The…”
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  13. 13

    GaAs p-i-n structures for X-ray detectors grown on Ge and GaAs substrates by Zhilyaev, Yu. V., Mikulik, D. I., Nasonov, A. V., Orlova, T. A., Panteleev, V. N., Poletaev, N. K., Fedorov, L. M., Shcheglov, M. P.

    Published in Technical physics letters (01-05-2012)
    “…Features of the creation of gallium arsenide (GaAs) p - i - n structures on germanium substrates are considered. Optimum regimes for growth of thick GaAs…”
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    Generating broadband random Gaussian signals by Zhilyaev, Yu. V., Il’inskaya, N. D., Inovenkov, A. N., Karpov, A. A., Kuznetsov, S. I., Orlova, T. A., Panteleev, V. N., Panyutin, E. A., Snytkina, S. A., Titkova, O. V., Fedorov, L. M., Khvostikov, V. P.

    Published in Technical physics letters (01-08-2010)
    “…General approaches to the problem of generating random Gaussian signals are considered, a variant of practical implementation of such a generator is proposed,…”
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