Estimations of Low Temperature Dislocation Mobility in GaN

The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 ...

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Bibliographic Details
Published in:	Physica status solidi. A, Applications and materials science Vol. 216; no. 17
Main Authors:	Orlov, Valeri I., Vergeles, Pavel S., Yakimov, Eugene B., Li, Xingji, Yang, Jianqun, Lv, Gang, Dong, Shangli
Format:	Journal Article
Language:	English
Published:	Weinheim Wiley Subscription Services, Inc 01-09-2019
Subjects:	activation energy Dislocation mobility GaN Indentation Low temperature Temperature Temperature dependence
Online Access:	Get full text
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Summary:	The size of dislocation rosettes introduced by indentation in the temperature range from 300 to 773 K are studied. The dislocation velocity and its temperature dependence are estimated. It is shown that the activation energy of dislocation movement at temperatures lower than 773 K does not exceed 1 eV. The activation energy of dislocation mobility in GaN is estimated from the measurements of traveling distances of dislocations gliding in pyramidal planes in the temperature range from 300 to 773 K. Its value is obtained to be equal to 650 ± 230 meV.
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.201900163