An integrated heterojunction bipolar transistor cascode opto-electronic mixer

An integrated heterojunction bipolar transistor cascode opto-electronic mixer

An integrated electrically pumped opto-electronic mixer consisting of two InP-GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated. Intrinsic down-conversion gains of 18.2 and 8.9 dB at RF optical modulation frequencies of 3 and 9.5 GHz were obtained. The performance...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques Vol. 47; no. 7; pp. 1358 - 1364
Main Authors: Betser, Y., Lasri, J., Sidorov, V., Cohen, S., Ritter, D., Orentstein, M., Eisentstein, G., Seeds, A.J., Madjar, A.
Format: Journal Article
Language:English
Published: IEEE 01-07-1999
Subjects:
Epitaxial layers
Equivalent circuits
Frequency
Gain
Heterojunction bipolar transistors
Indium phosphide
Mixers
Nonlinear optics
Nonlinearity
Optical mixing
Optical pumping
Optical sensors
Optoelectronics
Semiconductor devices
Simulation
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Summary:An integrated electrically pumped opto-electronic mixer consisting of two InP-GaInAs heterojunction bipolar transistors in a cascode configuration is demonstrated. Intrinsic down-conversion gains of 18.2 and 8.9 dB at RF optical modulation frequencies of 3 and 9.5 GHz were obtained. The performance of the cascode mixer and a single heterojunction bipolar transistor (HBT) opto-electronic mixer are compared. The performance of the cascode mixer was superior to the single HBT mixer, mainly at high frequencies. Up and down mixing conversion gains were measured and found comparable. A simulation was carried out by solving the nonlinear differential equations that correspond to the large-signal equivalent circuit. The results of the simulation enabled us to identify the principal nonlinear components in the equivalent circuit.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9480
1557-9670
DOI:10.1109/22.775479