Search Results - "Ordin, S. V."

Local thermoelectric effects in wide-gap semiconductors by Ordin, S. V., Zhilyaev, Yu. V., Zelenin, V. V., Panteleev, V. N.

“…Experimental confirmation of the appearance of local thermal electromotive forces, which were previously found in structures based on silicon p–n junctions, is…”
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Normal lattice vibrations and the crystal structure of anisotropic modifications of boron nitride by Ordin, S. V., Sharupin, B. N., Fedorov, M. I.

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Optical and dielectric characteristics of the rare-earth metal oxide Lu2O3 by Ordin, S. V., Shelykh, A. I.

“…The characteristics of the Lu 2 O 3 oxide and their variations controlled by compositional defects are studied. The defects are anion vacancies produced on…”
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Optimization of the operating conditions of thermocouples allowing for nonlinearity of the temperature distribution by Ordin, S. V.

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Optical and dielectric characteristics of the rare-earth metal oxide Lu{sub 2}O{sub 3} by Ordin, S. V., Shelykh, A. I.

“…The characteristics of the Lu{sub 2}O{sub 3} oxide and their variations controlled by compositional defects are studied. The defects are anion vacancies…”
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Role of the silicon dioxide in formation of higher manganese silicide films by Kamilov, T.S., Uzokov, A.A., Kabilov, D.K., Ordin, S.V., Klechovskaya, V.V., Zanaveskina, I.S.

“…The analysis of possibilities of producing the thin-film thermoelectric radiation detector was carried out. It is shown that use of the higher manganese…”
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Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films by Kamilov, T.S., Uzokov, A.A., Kabilov, D.K., Ordin, S.V., Klechkovskaya, V.V., Zanaveskina, I.S., Muminov, R.A., Zaveryukhin, B.N.

“…It is known that HMS - MnSi/sub 1.71-1.75/ is an anisotropy degenerative semiconductor and has figure-of-merit Z=0.7x10/sup -3/ K/sup -1/ in the range…”
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IR-reflection study of sintered SiC:Al thermoelectric semiconductors by Miyakawa, T., Okamoto, Y., Kawahara, T., Ordin, S.V., Fedorov, M.I., Miida, Y.

“…IR-reflection spectra of sintered SiC:Al thermoelectric semiconductor samples are studied in its reststrahlen region and analysed using a 4-component effective…”
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