High-quality nonpolar m -plane GaN substrates grown by HVPE

Relatively large size (about 10 mm × 10 mm) m ‐plane GaN substrates are grown by hydride vapor phase epitaxy (HVPE). The high crystalline quality of the substrates was observed by X‐ray diffraction analysis. Typical full widths at half maximum values of X‐ray rocking curves measured for the (10$ \ba...

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Bibliographic Details
Published in:	Physica status solidi. A, Applications and materials science Vol. 205; no. 5; pp. 1056 - 1059
Main Authors:	Fujito, Kenji, Kiyomi, Kazumasa, Mochizuki, Tae, Oota, Hirotaka, Namita, Hideo, Nagao, Satoru, Fujimura, Isao
Format:	Journal Article Conference Proceeding
Language:	English
Published:	Berlin WILEY-VCH Verlag 01-05-2008 WILEY‐VCH Verlag Wiley-VCH
Subjects:	68.37.Ps 68.47.Fg 78.30.Fs 78.60.Hk 81.05.Ea 81.15.Kk Condensed matter: structure, mechanical and thermal properties Defects and impurities: doping, implantation, distribution, concentration, etc Exact sciences and technology Physics Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Defect density Atomic force microscopy Raman spectra Phonon mode Roughness VPE XRD Gallium nitride
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Summary:	Relatively large size (about 10 mm × 10 mm) m ‐plane GaN substrates are grown by hydride vapor phase epitaxy (HVPE). The high crystalline quality of the substrates was observed by X‐ray diffraction analysis. Typical full widths at half maximum values of X‐ray rocking curves measured for the (10$ \bar 1 $0) and (10$ \bar 1 $2) reflections were 25–35 arcsec and 30–40 arcsec, respectively. The defect density distribution was analyzed from the [10$ \bar 1 $0] direction by the cathodeluminescence method. The dark spot density decreased in the growth direction and could be as low as 2.5 × 105 cm–2. No stacking faults could be seen. The surface roughness after the lapping, polishing and cleaning was measured by atomic force microscopy and the RMS roughness was 0.072 nm. All of the phonon modes that the selection rules allow have been observed in polarized Raman measurements. High‐quality large‐size m ‐plane GaN substrates will enable the realization of commercial production of nonpolar devices. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Bibliography:	ArticleID:PSSA200778709 ark:/67375/WNG-7DJTJ6C0-Q istex:53C4060B3636ED373691C49D1519E7E8DF5F8DE7
ISSN:	1862-6300 1862-6319
DOI:	10.1002/pssa.200778709