Search Results - "Onstine, A.H."

Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO by Ip, K, Gila, B.P, Onstine, A.H, Lambers, E.S, Heo, Y.W, Baik, K.H, Norton, D.P, Pearton, S.J, Kim, S, LaRoche, J.R, Ren, F

“…The role of UV ozone cleaning on the characteristics of Pt contacts on n-type (n∼1017cm−3) bulk single-crystal zinc oxide (ZnO) is reported. The contacts are…”
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Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs by Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

“…The low temperature (100/spl deg/C) deposition of Sc 2 O 3 or MgO layers is found to significantly increase the output power of AlGaN/GaN HEMTs. At 4 GHz,…”
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Novel dielectrics for gate oxides and surface passivation on GaN by Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.

“…We review recent progress in obtaining low interface state densities on GaN and reducing current collapse with dielectrics on AlGaN/GaN high electron mobility…”
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Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs by Gila, B.P., Johnson, J.W., Mehandru, R., Luo, B., Onstine, A.H., Krishnamoorthy, V., Bates, S., Abernathy, C.R., Ren, F., Pearton, S.J.

“…Scandium oxide was deposited epitaxially on (0001) GaN via gas‐source molecular beam epitaxy (GSMBE) using elemental Sc and an electron cyclotron resonance…”
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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

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New applications advisable for gallium nitride by Pearton, S.J., Abernathy, C.R., Overberg, M.E., Thaler, G.T., Onstine, A.H., Gila, B.P., Ren, F., Lou, B., Kim, J.

“…GaN-based visible light-emitting diodes and laser diodes are already commercialized for a variety of lighting and data storage applications. This materials…”
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Small signal measurement of Sc2O3 AlGaN/GaN moshemts by Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.

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Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation by Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.

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Small signal measurement of Sc 2O 3 AlGaN/GaN moshemts by Luo, B., Mehandru, R., Kang, B.S., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R., Gillespie, J.K., Jenkins, T., Sewell, J., Via, D., Crespo, A.

“…The rf performance of 1 × 200 μm 2 AlGaN/GaN MOS-HEMTs with Sc 2O 3 used as both the gate dielectric and as a surface passivation layer is reported. A maximum…”
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The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS by Luo, B, Mehandru, R.M, Kim, Jihyun, Ren, F, Gila, B.P, Onstine, A.H, Abernathy, C.R, Pearton, S.J, Fitch, R.C, Gillespie, J, Dellmer, R, Jenkins, T, Sewell, J, Via, D, Crespo, A

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Effects of Sc 2 O 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs by Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.

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Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation by Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.

“…The dc and power characteristics of AlGaN/GaN MOS-HEMTs with Sc 2O 3 gate dielectrics were compared with that of conventional metal-gate HEMTs fabricated on…”
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Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors by Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.

“…AlGaN/GaN high electron mobility transistors with either MgO or Sc 2O 3 surface passivation were irradiated with 40 MeV protons at a dose of 5×10 9 cm −2…”
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The role of cleaning conditions and epitaxial layer structure on reliability of Sc 2O 3 and MgO passivation on AlGaN/GaN HEMTS by Luo, B, Mehandru, R.M, Kim, Jihyun, Ren, F, Gila, B.P, Onstine, A.H, Abernathy, C.R, Pearton, S.J, Fitch, R.C, Gillespie, J, Dellmer, R, Jenkins, T, Sewell, J, Via, D, Crespo, A

“…The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc 2O 3 or MgO deposition at 100 °C were examined for their effects on the…”
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New Dielectrics for Gate Oxides and Surface Passivation on GaN by Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.

“…In this paper, the authors report the nitride surface preparation and growth of these crystalline oxide dielectrics, efforts to improve the oxide/nitride…”
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Comparison of surface passivation on films for reduction of current collapse in AlGaN/GaN high electron mobility transistors by Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Fitch, R., Gillespie, J., Jenkins, T., Sewell, J., Via, D., Crespo, A., Irokawa, Y.

“…Three different passivation layers (SiN/sub x/, MgO and Sc/sub 2/O/sub 3/) were examined for their effectiveness in mitigating surface-state-induced current…”
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