Search Results - "Ono, YA"

First-principles study of atomic wires on a H-terminated Si(100)-(2 × 1) surface by Watanabe, S., Ono, Y.A., Hashizume, T., Wada, Y.

“…The atomic and electronic structures of several atomic wires have been examined using first-principles calculations within the local density functional…”
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High performance low-temperature poly-Si n-channel TFTs for LCD by Mimura, A., Konishi, N., Ono, K., Ohwada, J.-I., Hosokawa, Y., Ono, Y.A., Suzuki, T., Miyata, K., Kawakami, H.

“…High-performance poly-Si TFTs were fabricated by a low-temperature 600 degrees C process utilizing hard glass substrates. To achieve low threshold voltage…”
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CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C by Takabatake, M., Ohwada, J., Ono, Y.A., Ono, K., Mimura, A., Konishi, N.

“…CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCDs were fabricated at…”
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Theoretical study of Ga adsorbates around dangling-bond wires on an H-terminated Si surface : Possibility of atomic-scale ferromagnets by WATANABE, S, ICHIMURA, M, ONOGI, T, ONO, Y. A, HASHIZUME, T, WADA, Y

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Effect of Differences in Room Brightness on Postural Control during Light Touch Contact by Shimatani, Koji, Goto, Takuya, Koge, Eriko, Oki, Sadaaki, Hasegawa, Masaki, Kanai, Shusaku, Ono, Takeya, Otsuka, Akira

“…[Purpose] This study investigated the effects of differences in room brightness on standing postural control with or without light touch contact (LT)…”
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Electronic structure of an atomic wire on a hydrogen-terminated Si(111) surface: First-principles study by Watanabe, S, Ono, YA, Hashizume, T, Wada, Y, Yamauchi, J, Tsukada, M

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Peripheral circuit integrated poly-Si TFT LCD with gray scale representation by Ohwada, J.-I., Takabatake, M., Ono, Y.A., Mimura, A., Ono, K., Konishi, N.

“…A 3.3-in.-diagonal fully integrated low-temperature (<600 degrees C) processed polycrystalline silicon (poly-Si) thin-film transistor (TFT) liquid-crystal…”
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Transferred charge in the active layer and EL device characteristics of TFEL cells by ONO, Y. A, KAWAKAMI, H, FUYAMA, M, ONISAWA, K

“…The relationship between transferred charge in the active layer of a thin-film electroluminescent (TFEL) cell and EL device characteristics has been…”
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Theoretical study of atomic and electronic structures of atomic wires on an H-terminated Si(100)2 x 1 surface by Watanabe, S, Ono, YA, Hashizume, T, Wada, Y

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Effects of oxygen in CaS : Eu active layers on emission properties of thin film electroluminescent cells by ABE, Y, ONISAWA, K.-I, ONO, Y. A, HANAZONO, M

“…CaS:Eu active layers for thin film electroluminescent (TFEL) cells were deposited by the electron beam evaporation method under several partial pressures of…”
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MATERIALS FOR FULL-COLOR ELECTROLUMINESCENT DISPLAYS by Ono, Yoshimasa A

“…New thin-film electroluminescent (EL) materials with blue and broadband emissions recently have been developed that meet the phosphor requirements for…”
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White light emitting thin film electroluminescent cells with SrS:Pr,Ce active layer and their application to multicolor electroluminescent devices by ABE, Y, ONISAWA, K, TAMURA, K, NAKAYAMA, T, HANAZONO, M, ONO, Y. A

“…White light emission with a maximum luminance of 950 cd/m 2 under a 1 kHz sinusoidal wave drive condition was obtained from a SrS:Pr,Ce thin film…”
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Electroluminescence in CaO : Eu thin film by ABE, Y, ONISAWA, K.-I, ONO, Y. A, HANAZONO, M

“…A CaO:Eu thin film electroluminescent (EL) cell was fabricated and its EL characteristics were studied. A sharp emission at 595 nm, a weak emission around 620…”
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Theory of the low-temperature Seebeck coefficient in dilute alloys by Ono, Y. A., Taylor, P. L.

“…The Seebeck coefficient in dilute alloys at low temp. is investigated in a simple model in which free electrons are scattered by a random array of fixed…”
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