Search Results - "Ono, Kouichi"

Model analysis of the feature profile evolution during Si etching in HBr-containing plasmas by Mori, Masahito, Irie, Shoki, Osano, Yugo, Eriguchi, Koji, Ono, Kouichi

“…Feature profiles of Si etched in HBr-containing plasmas have been analyzed through a comparison between experiments and simulations. The emphasis was placed on…”
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Impacts of plasma process-induced damage on MOSFET parameter variability and reliability by Eriguchi, Koji, Ono, Kouichi

“…Plasma process-Induced Damage (PID) is one of the critical issues in designing Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs), because PID is…”
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Interactions between Plasmas and Nano-interfaces by Ono, Kouichi

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Formation mechanisms of etched feature profiles during Si etching in Cl2/O2 plasmas by Mori, Masahito, Osano, Yugo, Irie, Shoki, Eriguchi, Koji, Ono, Kouichi

“…Feature profiles of poly-Si etched in Cl2/O2 plasmas have been analyzed through a mechanistic comparison between experiments and simulations. The emphasis was…”
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Surface smoothing during plasma etching of Si in Cl2 by Nakazaki, Nobuya, Matsumoto, Haruka, Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

“…Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl2 plasmas,…”
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Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors by Eriguchi, Koji, Matsuda, Asahiko, Takao, Yoshinori, Ono, Kouichi

“…We investigated the plasma-induced physical damage (PPD) mechanism in a field-effect transistor (FET) with a fin-type channel, called FinFET. Compared to PPD…”
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Modeling of ion-bombardment damage on Si surfaces for in-line analysis by Matsuda, Asahiko, Nakakubo, Yoshinori, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

“…Structures and mechanism of ion-bombardment damage on silicon wafers exposed to plasma were investigated comprehensively. By using molecular dynamics…”
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An evaluation method of the profile of plasma-induced defects based on capacitance-voltage measurement by Okada, Yukimasa, Ono, Kouichi, Eriguchi, Koji

“…Aggressive shrinkage and geometrical transition to three-dimensional structures in metal-oxide-semiconductor field-effect transistors (MOSFETs) lead to…”
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Plasma–surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication: A numerical and experimental study by Ono, Kouichi, Ohta, Hiroaki, Eriguchi, Koji

“…Plasma–surface interactions in Cl- and Br-based plasmas have been studied for advanced front-end-of-line (FEOL) etching processes in nanoscale ULSI device…”
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Evaluation technique for plasma-induced SiOC dielectric damage by capacitance-voltage hysteresis monitoring by Nishida, Kentaro, Okada, Yukimasa, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

“…We propose an electrical method, named capacitance-voltage (C-V) monitoring, for quantifying plasma-induced damage (PID) to interlayer dielectrics. By this…”
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Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas by Nakazaki, Nobuya, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

“…Classical molecular dynamics (MD) simulations have been performed for SiClx+ (x = 0-4) ions incident on Si(100) surfaces, using an improved Stillinger-Weber…”
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Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate by Iwai, Takaaki, Eriguchi, Koji, Yamauchi, Shohei, Noro, Naotaka, Kitagawa, Junichi, Ono, Kouichi

“…The authors investigate the effects of microwave annealing (MWA) on the recovery of plasma process-induced ion-bombardment damage in Si substrates. For damage…”
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Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence by Tsuda, Hirotaka, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi

“…A three-dimensional atomic-scale cellular model (ASCeM-3D) has been developed to reproduce the evolution of feature profiles on atomic or nanometer scale…”
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Structural and electrical characterization of HBr/O2 plasma damage to Si substrate by Fukasawa, Masanaga, Nakakubo, Yoshinori, Matsuda, Asahiko, Takao, Yoshinori, Eriguchi, Koji, Ono, Kouichi, Minami, Masaki, Uesawa, Fumikatsu, Tatsumi, Tetsuya

“…Silicon substrate damage caused by HBr/O2 plasma exposure was investigated by spectroscopic ellipsometry (SE), high-resolution Rutherford backscattering…”
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Microplasma thruster for ultra-small satellites: Plasma chemical and aerodynamical aspects by Takao, Yoshinori, Takahashi, Takeshi, Eriguchi, Koji, Ono, Kouichi

“…A microplasma thruster has been developed of electrothermal type using azimuthally symmetric microwave-excited microplasmas. The microplasma source was ~2 mm…”
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Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices by Eriguchi, Koji, Takao, Yoshinori, Ono, Kouichi

“…A comprehensive model predicting the effects of plasma-induced damage (PID) on parameter variations in advanced metal–oxide–semiconductor field-effect…”
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An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching by Osano, Yugo, Ono, Kouichi

“…A phenomenological model has been developed to simulate the feature profile evolution for nanometer-scale control of the profile and critical dimension during…”
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Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring by Nakakubo, Yoshinori, Matsuda, Asahiko, Fukasawa, Masanaga, Takao, Yoshinori, Tatsumi, Tetsuya, Eriguchi, Koji, Ono, Kouichi

“…Si surface damage induced by H 2 plasmas was studied in detail by optical and electrical analyses. Spectroscopic ellipsometry (SE) revealed a decrease in the…”
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Structural, mechanical, and electrical properties of cubic boron nitride thin films deposited by magnetically enhanced plasma ion plating method by Noma, Masao, Eriguchi, Koji, Takao, Yoshinori, Terayama, Nobuyuki, Ono, Kouichi

“…We proposed a novel process for improving cubic boron nitride (c-BN) film properties coated on Si substrates, using a magnetically enhanced plasma ion plating…”
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Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal--Oxide--Semiconductor Field-Effect Transistor by Eriguchi, Koji, Kamei, Masayuki, Takao, Yoshinori, Ono, Kouichi

“…We discuss plasma charging damage (PCD) to high-$k$ gate dielectrics and the resultant threshold voltage shift ($\Delta V_{\text{th}}$) in n-channel…”
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