Search Results - "Olynick, Deirdre L"
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Investigation of phonon coherence and backscattering using silicon nanomeshes
Published in Nature communications (04-01-2017)“…Phonons can display both wave-like and particle-like behaviour during thermal transport. While thermal transport in silicon nanomeshes has been previously…”
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Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning
Published in Advanced materials (Weinheim) (14-10-2015)“…Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next‐generation…”
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Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers
Published in ACS nano (22-11-2011)“…Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting of surface chemical prepatterns or by graphoepitaxial alignment with…”
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High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates
Published in Advanced materials (Weinheim) (08-11-2012)“…High‐aspect‐ratio sub‐15‐nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block…”
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Interface Segregating Fluoralkyl-Modified Polymers for High-Fidelity Block Copolymer Nanoimprint Lithography
Published in Journal of the American Chemical Society (09-03-2011)“…Block copolymer (BCP) lithography is a powerful technique to write periodic arrays of nanoscale features into substrates at exceptionally high densities. In…”
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Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography
Published in Nano letters (14-07-2010)“…We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly…”
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Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns
Published in Nanotechnology (18-07-2014)“…The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology…”
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Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half-Pitch by Substrate−Surface Functionalization
Published in Langmuir (05-07-2005)“…Resist detachment from the substrate during mold−substrate separation is one of the key challenges for nanoimprint lithography as the pitch of features…”
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Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites
Published in Nano letters (01-01-2009)“…We present a novel fabrication method for incorporating nanometer to micrometer scale few-layer graphene (FLG) features onto substrates with electrostatic…”
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Vapor-Phase Self-Assembled Monolayer for Improved Mold Release in Nanoimprint Lithography
Published in Langmuir (15-02-2005)“…Resist adhesion to the mold is one of the challenges for nanoimprint lithography. The main approach to overcoming it is to apply a self-assembled monolayer of…”
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Nanoscale molecular-switch devices fabricated by imprint lithography
Published in Applied physics letters (10-03-2003)“…Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were…”
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Nanoimprint-Induced Molecular Stacking and Pattern Stabilization in a Solution-Processed Subphthalocyanine Film
Published in ACS nano (25-05-2010)“…We present a systematic study on the thermal nanoimprinting of a boron subphthalocynamine molecule, 2-allylphenoxy-(subphthalocyaninato)boron(III) (SubPc-A),…”
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Fabrication of a 34 × 34 Crossbar Structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography
Published in Nano letters (14-07-2004)“…We have developed a single-layer UV-nanoimprint process, which was utilized to fabricate 34 × 34 crossbar circuits with a half-pitch of 50 nm (equivalent to a…”
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link between nanoscale feature development in a negative resist and the Hansen solubility sphere
Published in Journal of polymer science. Part B, Polymer physics (01-11-2009)“…By systematically studying development of a high resolution, negative electron beam resist, hexa-methyl acetoxy calix(6)arene, we have elicited a more general…”
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Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites
Published in Nano letters (11-02-2009)Get full text
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Template fabrication for the 32 nm node and beyond
Published in Microelectronic engineering (01-05-2007)“…Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and flash imprint lithography (S-FIL ™) is a unique…”
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Template fabrication for the 32nm node and beyond
Published in Microelectronic engineering (01-05-2007)“…Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22nm nodes. Step and flash imprint lithography (S-FIL(TM)) is a unique…”
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Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-11-2019)“…Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in…”
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Roller-style electrostatic printing of prepatterned few-layer-graphenes
Published in Applied physics letters (04-01-2010)“…Electrostatic exfoliation of patterned few-layer-graphenes was demonstrated using a method compatible with high throughput roll-to-roll manufacturing. A…”
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Patterning: High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates (Adv. Mater. 42/2012)
Published in Advanced materials (Weinheim) (08-11-2012)“…On page 5688, Thomas P. Russell, Deirdre L. Olynick, and co‐workers show that high‐aspect‐ratio sub‐15‐nm silicon nanotrenches can be directly patterned from…”
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