Search Results - "Olynick, Deirdre L"

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  1. 1

    Investigation of phonon coherence and backscattering using silicon nanomeshes by Lee, Jaeho, Lee, Woochul, Wehmeyer, Geoff, Dhuey, Scott, Olynick, Deirdre L., Cabrini, Stefano, Dames, Chris, Urban, Jeffrey J., Yang, Peidong

    Published in Nature communications (04-01-2017)
    “…Phonons can display both wave-like and particle-like behaviour during thermal transport. While thermal transport in silicon nanomeshes has been previously…”
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    Journal Article
  2. 2

    Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning by Ashby, Paul D., Olynick, Deirdre L., Ogletree, D. Frank, Naulleau, Patrick P.

    Published in Advanced materials (Weinheim) (14-10-2015)
    “…Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next‐generation…”
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    Journal Article
  3. 3

    Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers by Park, Sang-Min, Liang, Xiaogan, Harteneck, Bruce D, Pick, Teresa E, Hiroshiba, Nobuya, Wu, Ying, Helms, Brett A, Olynick, Deirdre L

    Published in ACS nano (22-11-2011)
    “…Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting of surface chemical prepatterns or by graphoepitaxial alignment with…”
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    Journal Article
  4. 4

    High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates by Gu, Xiaodan, Liu, Zuwei, Gunkel, Ilja, Chourou, S. T., Hong, Sung Woo, Olynick, Deirdre L., Russell, Thomas P.

    Published in Advanced materials (Weinheim) (08-11-2012)
    “…High‐aspect‐ratio sub‐15‐nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block…”
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    Journal Article
  5. 5

    Interface Segregating Fluoralkyl-Modified Polymers for High-Fidelity Block Copolymer Nanoimprint Lithography by Voet, Vincent S. D, Pick, Teresa E, Park, Sang-Min, Moritz, Manuel, Hammack, Aaron T, Urban, Jeffrey J, Ogletree, D. Frank, Olynick, Deirdre L, Helms, Brett A

    Published in Journal of the American Chemical Society (09-03-2011)
    “…Block copolymer (BCP) lithography is a powerful technique to write periodic arrays of nanoscale features into substrates at exceptionally high densities. In…”
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    Journal Article
  6. 6

    Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography by Liang, Xiaogan, Jung, Yeon-Sik, Wu, Shiwei, Ismach, Ariel, Olynick, Deirdre L, Cabrini, Stefano, Bokor, Jeffrey

    Published in Nano letters (14-07-2010)
    “…We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly…”
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    Journal Article
  7. 7

    Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns by Liu, Zuwei, Gu, Xiaodan, Hwu, Justin, Sassolini, Simone, Olynick, Deirdre L

    Published in Nanotechnology (18-07-2014)
    “…The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology…”
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    Journal Article
  8. 8

    Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half-Pitch by Substrate−Surface Functionalization by Jung, Gun-Young, Li, Zhiyong, Wu, Wei, Ganapathiappan, S, Li, Xuema, Olynick, Deirdre L, Wang, S. Y, Tong, William M, Williams, R. Stanley

    Published in Langmuir (05-07-2005)
    “…Resist detachment from the substrate during mold−substrate separation is one of the key challenges for nanoimprint lithography as the pitch of features…”
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    Journal Article
  9. 9

    Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites by Liang, Xiaogan, Chang, Allan S. P, Zhang, Yuegang, Harteneck, Bruce D, Choo, Hyuck, Olynick, Deirdre L, Cabrini, Stefano

    Published in Nano letters (01-01-2009)
    “…We present a novel fabrication method for incorporating nanometer to micrometer scale few-layer graphene (FLG) features onto substrates with electrostatic…”
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    Journal Article
  10. 10

    Vapor-Phase Self-Assembled Monolayer for Improved Mold Release in Nanoimprint Lithography by Jung, Gun-Young, Li, Zhiyong, Wu, Wei, Chen, Yong, Olynick, Deirdre L, Wang, Shih-Yuan, Tong, William M, Williams, R. Stanley

    Published in Langmuir (15-02-2005)
    “…Resist adhesion to the mold is one of the challenges for nanoimprint lithography. The main approach to overcoming it is to apply a self-assembled monolayer of…”
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    Journal Article
  11. 11

    Nanoscale molecular-switch devices fabricated by imprint lithography by Chen, Yong, Ohlberg, Douglas A. A., Li, Xuema, Stewart, Duncan R., Stanley Williams, R., Jeppesen, Jan O., Nielsen, Kent A., Stoddart, J. Fraser, Olynick, Deirdre L., Anderson, Erik

    Published in Applied physics letters (10-03-2003)
    “…Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were…”
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    Journal Article
  12. 12

    Nanoimprint-Induced Molecular Stacking and Pattern Stabilization in a Solution-Processed Subphthalocyanine Film by Liang, Xiaogan, Chen, Teresa, Jung, Yeon-Sik, Miyamoto, Yoshikazu, Han, Gang, Cabrini, Stefano, Ma, Biwu, Olynick, Deirdre L

    Published in ACS nano (25-05-2010)
    “…We present a systematic study on the thermal nanoimprinting of a boron subphthalocynamine molecule, 2-allylphenoxy-(subphthalocyaninato)boron(III) (SubPc-A),…”
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    Journal Article
  13. 13

    Fabrication of a 34 × 34 Crossbar Structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography by Jung, G. Y, Ganapathiappan, S, Ohlberg, Douglas A. A, Olynick, Deirdre L, Chen, Y, Tong, William M, Williams, R. Stanley

    Published in Nano letters (14-07-2004)
    “…We have developed a single-layer UV-nanoimprint process, which was utilized to fabricate 34 × 34 crossbar circuits with a half-pitch of 50 nm (equivalent to a…”
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    Journal Article
  14. 14

    link between nanoscale feature development in a negative resist and the Hansen solubility sphere by Olynick, Deirdre L, Ashby, Paul D, Lewis, Mark D, Jen, Timothy, Lu, Haoren, Liddle, J. Alexander, Chao, Weilun

    “…By systematically studying development of a high resolution, negative electron beam resist, hexa-methyl acetoxy calix(6)arene, we have elicited a more general…”
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    Template fabrication for the 32 nm node and beyond by Schmid, Gerard M., Thompson, Ecron, Stacey, Nick, Resnick, Douglas J., Olynick, Deirdre L., Anderson, Erik H.

    Published in Microelectronic engineering (01-05-2007)
    “…Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22 nm nodes. Step and flash imprint lithography (S-FIL ™) is a unique…”
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    Journal Article Conference Proceeding
  17. 17

    Template fabrication for the 32nm node and beyond by Schmid, Gerard M., Thompson, Ecron, Stacey, Nick, Resnick, Douglas J., Olynick, Deirdre L., Anderson, Erik H.

    Published in Microelectronic engineering (01-05-2007)
    “…Imprint lithography has been included on the ITRS Lithography Roadmap at the 32 and 22nm nodes. Step and flash imprint lithography (S-FIL(TM)) is a unique…”
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    Journal Article
  18. 18

    Temperature and oxygen concentration effects on anisotropy in chromium hard mask etching for nanoscale fabrication by Staaks, Daniel, Yu, Zhaoning, Dhuey, Scott D., Sassolini, Simone, Lee, Kim Y., Rangelow, Ivo W., Olynick, Deirdre L.

    “…Chromium and its oxides are valuable as functional materials and plasma-etching hard masks in micro- and nanofabrication. While the continuous decrease in…”
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  19. 19

    Roller-style electrostatic printing of prepatterned few-layer-graphenes by Liang, Xiaogan, Giacometti, Valentina, Ismach, Ariel, Harteneck, Bruce D., Olynick, Deirdre L., Cabrini, Stefano

    Published in Applied physics letters (04-01-2010)
    “…Electrostatic exfoliation of patterned few-layer-graphenes was demonstrated using a method compatible with high throughput roll-to-roll manufacturing. A…”
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    Journal Article
  20. 20

    Patterning: High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates (Adv. Mater. 42/2012) by Gu, Xiaodan, Liu, Zuwei, Gunkel, Ilja, Chourou, S. T., Hong, Sung Woo, Olynick, Deirdre L., Russell, Thomas P.

    Published in Advanced materials (Weinheim) (08-11-2012)
    “…On page 5688, Thomas P. Russell, Deirdre L. Olynick, and co‐workers show that high‐aspect‐ratio sub‐15‐nm silicon nanotrenches can be directly patterned from…”
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    Journal Article