Search Results - "Olson, Benjamin V."

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  1. 1

    Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors by Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao-Yu, Liu, Shi, Zhang, Yong-Hang, Kadlec, Emil A., Olson, Benjamin V., Shaner, Eric A.

    Published in Applied physics letters (16-02-2015)
    “…We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb…”
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    Journal Article
  2. 2

    Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared by Koerperick, Edwin J, Norton, Dennis T, Olesberg, Jonathon T, Olson, Benjamin V, Prineas, John P, Boggess, Thomas F

    Published in IEEE journal of quantum electronics (01-01-2011)
    “…Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are…”
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    Journal Article
  3. 3

    Nondegenerate two-photon absorption in GaSb by Olson, Benjamin V., Gehlsen, Michael P., Boggess, Thomas F.

    Published in Optics communications (01-09-2013)
    “…The nonlinear optical absorption of n-type GaSb at 77K was investigated using time-resolved pump–probe techniques. By holding the pump wavelength constant and…”
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  4. 4

    Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors by Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao-Yu, Liu, Shi, Zhang, Yong-Hang, Kadlec, Emil A., Olson, Benjamin V., Shaner, Eric A.

    Published in Applied physics letters (16-02-2015)
    “…We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb…”
    Get full text
    Journal Article