Search Results - "Olsen, S.H."

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs by Dalapati, G.K., Chattopadhyay, S., Kwa, K.S.K., Olsen, S.H., Tsang, Y.L., Agaiby, R., O'Neill, A.G., Dobrosz, P., Bull, S.J.

“…Surface channel strained-silicon MOSFETs on relaxed Si/sub 1-x/Ge/sub x/ virtual substrates (VSs) have been established as an attractive avenue for extending…”
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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture by Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Kwa, K.S.K., Chattopadhyay, S., Waite, A.M., Tang, Y.T., Evans, A.G.R., Norris, D.J., Cullis, A.G., Paul, D.J., Robbins, D.J.

“…Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with…”
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Strained Si/SiGe MOS technology: Improving gate dielectric integrity by Olsen, S.H., Yan, L., Agaiby, R., Escobedo-Cousin, E., O’Neill, A.G., Hellström, P.-E., Östling, M., Lyutovich, K., Kasper, E., Claeys, C., Parker, E.H.C.

“…Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally…”
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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs by Olsen, S.H., O'Neill, A.G., Chattopadhyay, S., Driscoll, L.S., Kwa, K.S.K., Norris, D.J., Cullis, A.G., Paul, D.J.

“…Results comparing strained-Si-SiGe n-channel MOSFET performance of single-and dual-surface channel devices fabricated using 15% Ge content SiGe virtual…”
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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter by Alatise, O.M., Kwa, K.S.K., Olsen, S.H., O'Neill, A.G.

“…The impact of self-heating in strained-Si MOSFETs on the switching characteristics of a complementary-metal-oxide-semiconductor (CMOS) inverter and the voltage…”
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White sponge nevus presenting as genital lesions in a 28-year-old female by Cutlan, J.E., Saunders, N., Olsen, S.H., Fullen, D.R.

“…A case is presented of white plaques occurring predominantly on the vulvar mucosa of a 28‐year‐old female diagnosed as white sponge nevus (WSN). WSN is a rare,…”
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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs by Olsen, S.H., Escobedo-Cousin, E., Varzgar, J.B., Agaiby, R., Seger, J., Dobrosz, P., Chattopadhyay, S., Bull, S.J., O'Neill, A.G., Hellstrom, P.-E., Edholm, J., Ostling, M., Lyutovich, K.L., Oehme, M., Kasper, E.

“…This paper presents the first results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in…”
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Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs by Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Zhang, J.

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Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode by Gaspari, V., Fobelets, K., Ding, P.W., Velazquez-Perez, J.E., Olsen, S.H., O'Neill, A.G., Zhang, J.

“…The dynamic threshold (DT) behavior of strained-Si (s-Si) n-type surface channel MOSFETs has been investigated for operating temperatures ranging from 10 to…”
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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs by Olsen, S.H., O’Neill, A.G., Norris, D.J., Cullis, A.G., Fobelets, K., Kemhadjian, H.A.

“…The performance of surface channel MOSFET devices is dependent on the Si/SiO 2 interface roughness. This paper examines the performance demonstrated by…”
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Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs by Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Jing Zhang

“…On-state and off-state performance of strained-Si-SiGe n-channel MOSFETs have been investigated as a function of SiGe virtual substrate alloy composition…”
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The High-Mobility Bended n-Channel Silicon Nanowire Transistor by Moselund, K.E., Najmzadeh, M., Dobrosz, P., Olsen, S.H., Bouvet, D., De Michielis, L., Pott, V., Ionescu, A.M.

“…This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire…”
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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With [Formula Omitted] Gate Stacks by Alatise, O.M, Olsen, S.H, Cowern, N, O'Neill, A.G, Majhi, P

“…The origin of the loss in performance enhancement commonly observed in strained-SiGe devices at short gate lengths is examined and found to be dominated by…”
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Effect of slaughter methods on blood spotting and residual blood in fillets of Atlantic salmon ( Salmo salar) by Olsen, Stein Harris, Sorensen, Nils Kristian, Stormo, Svein Kristian, Elvevoll, Edel Oddny

“…During the last few years blood spots in fresh and smoked Atlantic salmon fillets have become a concern to the industry. At present there are no appropriate…”
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Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility by Tsang, Y.L., O'Neill, A.G., Gallacher, B.J., Olsen, S.H.

“…The piezoresistance model has commonly been used to describe mobility enhancement for low levels of process induced strain in CMOS technology. However, many…”
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Modeling of the Threshold Voltage in Strained Si/Si1 - x Gex/Si1 - yGey(x > or = y) CMOS Architectures by Tsang, Y.L, Chattopadhyay, S, Uppal, S, Escobedo-Cousin, E, Ramakrishnan, H.K, Olsen, S.H, O'Neill, A.G

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Improved Identification of Isomeric Steroids Using the Paternò-Büchi Reaction with Ion Mobility-Mass Spectrometry by Maddox, Samuel W., Olsen, Stine S.H., Velosa, Diana C., Burkus-Matesevac, Aurora, Peverati, Roberto, Chouinard, Christopher D.

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1/ f noise study on strained Si 0.8Ge 0.2 p-channel MOSFETs with high-k/poly Si gate stack by Yan, L., Simoen, E., Olsen, S.H., Akheyar, A., Claeys, C., O’Neill, A.G.

“…The study of the low frequency (1/ f) noise of strained Si 0.8Ge 0.2 p-channel MOSFETs with poly Si/HfSiO x gate stacks is presented. Apart from the reduced…”
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Toward Routine Analysis of Anabolic Androgenic Steroids in Urine Using Ion Mobility-Mass Spectrometry by Velosa, Diana C, Rivera, Marcus E, Neal, Shon P, Olsen, Stine S. H, Burkus-Matesevac, Aurora, Chouinard, Christopher D

“…Anabolic androgenic steroids (AAS) make up one of the most prevalent classes of performance-enhancing drugs banned by the World Anti-Doping Agency (WADA) due…”
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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With \hbox/\hbox Gate Stacks by Alatise, O.M., Olsen, S.H., Cowern, N., O'Neill, A.G., Majhi, P.

“…The short-channel performance of compressively strained Si 0.77 Ge 0.23 pMOSFETs with HfSiO x /TiSiN gate stacks has been characterized alongside that of…”
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