Search Results - "Olmstead, M A"

Evaluation of Potential Cover Crops for Inland Pacific Northwest Vineyards by OLMSTEAD, M. A, WAMPLE, R. L, GREENE, S. L, TARARA, J. M

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Photothermal displacement spectroscopy: An optical probe for solids and surfaces by Olmstead, M. A., Amer, N. M., Kohn, S., Fournier, D., Boccara, A. C.

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Band bending and surface defects in β -Ga2O3 by Lovejoy, T. C., Chen, Renyu, Zheng, X., Villora, E. G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A.

“…Surface band bending and surface defects on the UV-transparent conducting oxide β-Ga2O3 (100) are studied with hard x-ray photoemission spectroscopy and…”
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Water requirements and crop coefficient for low-chill peach trees in subtropical climates by Zambrano-Vaca, C., Zotarelli, L., Beeson, R.C., Migliaccio, K.W., Chaparro, J.X., Olmstead, M.A.

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Surface morphology and electronic structure of bulk single crystal β -Ga 2 O 3 ( 100 ) by Lovejoy, T. C., Yitamben, E. N., Shamir, N., Morales, J., Villora, E. G., Shimamura, K., Zheng, S., Ohuchi, F. S., Olmstead, M. A.

“…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide ( β…”
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The frequency of freeze events in subtropical blueberry growing regions in Florida by Conlan, E.K., Olmstead, M.A., Olmstead, J.W.

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Surface morphology and electronic structure of bulk single crystal β-Ga2O3(100) by Lovejoy, T. C., Yitamben, E. N., Shamir, N., Morales, J., Villora, E. G., Shimamura, K., Zheng, S., Ohuchi, F. S., Olmstead, M. A.

“…Experimental studies of the surface morphology and electronic structure of bulk single crystals of the transparent and wide gap semiconductor gallium oxide…”
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Characterization of xylem vessels in sweet cherries (Prunus avium L.) on dwarfing rootstocks by Olmstead, M.A, Lang, N.S, Lang, G.A, Ewers, F, Owens, S

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Surface bands for single-domain 2×1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals by BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A, BACHRACH, R. Z

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Model Semiconductor Surfaces: Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces by Bringans, R D, Uhrberg, R I G, Olmstead, M A, Bachrach, R Z, Northrup, J E

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MnSe phase segregation during heteroepitaxy of Mn doped Ga2Se3 on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A.

“…Heteroepitaxial thin films of Mn-doped Ga2Se3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1–2 nm, after which…”
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Direct measurement of the polarization dependence of Si(111)2x1 surface-state absorption by use of photothermal displacement spectroscopy by OLMSTEAD, M. A, AMER, N. M

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Interface formation of GaAs with Si(100), Si(111), and Ge(111): core-level spectroscopy for monolayer coverages of GaAs, Ga, and As by BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

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Variable growth modes of CaF2 on Si(111) determined by x-ray photoelectron diffraction by DENLINGER, J. D, ROTENBERG, E, HESSINGER, U, LESKOVAR, M, OLMSTEAD, M. A

“…Chemical discrimination of bulk and interface Ca 2p x-ray photoelectron diffraction modulations is used to identify three growth regimes during the initial…”
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MnSe phase segregation during heteroepitaxy of Mn doped Ga 2 Se 3 on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A.

“…Heteroepitaxial thin films of Mn-doped Ga 2 Se 3 are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm, after…”
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Band bending and surface defects in β -Ga 2 O 3 by Lovejoy, T. C., Chen, Renyu, Zheng, X., Villora, E. G., Shimamura, K., Yoshikawa, H., Yamashita, Y., Ueda, S., Kobayashi, K., Dunham, S. T., Ohuchi, F. S., Olmstead, M. A.

“…Surface band bending and surface defects on the UV-transparent conducting oxide β -Ga 2 O 3 (100) are studied with hard x-ray photoemission spectroscopy and…”
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Surface structure and interface formation of Si on GaAs(100) by Bachrach, R. Z., Bringans, R. D., Olmstead, M. A., Uhrberg, R. I. G.

“…The interfacial development of Si on GaAs(100) has been studied using core level photoemission. The studies included arsenic rich and gallium rich starting…”
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MnSe phase segregation during heteroepitaxy of Mn doped Ga{sub 2}Se{sub 3} on Si(001) by Lovejoy, T. C., Yitamben, E. N., Heald, S. M., Ohuchi, F. S., Olmstead, M. A., Univ. of Washington, Center for Nanotechnology

“…Heteroepitaxial thin films of Mn-doped Ga{sub 2}Se{sub 3} are grown by molecular beam epitaxy on Si(001):As. Mn-doped films are laminar for the first 1-2 nm,…”
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Formation of the interface between GaAs and Si: implications for GaAs-on-Si heteroepitaxy by BRINGANS, R. D, OLMSTEAD, M. A, UHRBERG, R. I. G, BACHRACH, R. Z

“…Results of photoemission core-level spectroscopy measurements for coverages of around one monolayer of As, Ga, and GaAs on Si substrates are presented. The…”
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Electronic and atomic structure of GaAs epitaxial overlays on Si (111) by NORTHRUP, J. E, BRINGANS, R. D, UHRBERG, R. I. G, OLMSTEAD, M. A

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