Search Results - "Oliver, Rachel"

Preface to the special issue on Microscopy of Semiconducting Materials 2023 by Walther, Thomas, Oliver, Rachel A

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Water use signature patterns for analyzing household consumption using medium resolution meter data by Cardell-Oliver, Rachel

“…Providers of potable water to households and businesses are charged with conserving water. Addressing this challenge requires accurate information about how…”
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Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond by Field, Daniel E, Cuenca, Jerome A, Smith, Matthew, Fairclough, Simon M, Massabuau, Fabien C-P, Pomeroy, James W, Williams, Oliver, Oliver, Rachel A, Thayne, Iain, Kuball, Martin

“…Integrating diamond with GaN high electron mobility transistors (HEMTs) improves thermal management, ultimately increasing the reliability and performance of…”
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Understanding the Role of Grain Boundaries on Charge‐Carrier and Ion Transport in Cs2AgBiBr6 Thin Films by Li, Zewei, Senanayak, Satyaprasad P., Dai, Linjie, Kusch, Gunnar, Shivanna, Ravichandran, Zhang, Youcheng, Pradhan, Dipika, Ye, Junzhi, Huang, Yi‐Teng, Sirringhaus, Henning, Oliver, Rachel A., Greenham, Neil C., Friend, Richard H., Hoye, Robert L. Z.

“…Halide double perovskites have gained significant attention, owing to their composition of low‐toxicity elements, stability in air, and recent demonstrations…”
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Spectral diffusion time scales in InGaN/GaN quantum dots by Gao, Kang, Springbett, Helen, Zhu, Tongtong, Oliver, Rachel A., Arakawa, Yasuhiko, Holmes, Mark J.

“…A detailed temporal analysis of the spectral diffusion phenomenon in single photon emitting InGaN/GaN quantum dots (QDs) is performed via measurements of both…”
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Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide by Chen, Chen, Ghosh, Saptarsi, Adams, Francesca, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

“…The scanning capacitance microscope (SCM) is a powerful tool to characterise local electrical properties in GaN-based high electron mobility transistor (HEMT)…”
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Efficient and Bright Deep‐Red Light‐Emitting Diodes based on a Lateral 0D/3D Perovskite Heterostructure by Ke, You, Guo, Jingshu, Kong, Decheng, Wang, Jingmin, Kusch, Gunnar, Lin, Chen, Liu, Dawei, Kuang, Zhiyuan, Qian, Dongmin, Zhou, Fuyi, Zhang, Guangbin, Niu, Meiling, Cao, Yu, Oliver, Rachel A., Dai, Daoxin, Jin, Yizheng, Wang, Nana, Huang, Wei, Wang, Jianpu

“…Bright and efficient deep‐red light‐emitting diodes (LEDs) are important for applications in medical therapy and biological imaging due to the high penetration…”
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Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification by Zhu, Tongtong, Liu, Yingjun, Ding, Tao, Fu, Wai Yuen, Jarman, John, Ren, Christopher Xiang, Kumar, R. Vasant, Oliver, Rachel A.

“…Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly…”
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InGaN as a Substrate for AC Photoelectrochemical Imaging by Zhou, Bo, Das, Anirban, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Krause, Steffi

“…AC photoelectrochemical imaging at electrolyte–semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations…”
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Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy by Chen, Chen, Ghosh, Saptarsi, De Wolf, Peter, Liang, Zhida, Adams, Francesca, Kappers, Menno J., Wallis, David J., Oliver, Rachel A.

“…Hyperspectral scanning capacitance microscopy (SCM) measures d C / d V − V spectra at every XY location of a semiconductor sample surface area. We report its…”
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Thermal stress modelling of diamond on GaN/III-Nitride membranes by Cuenca, Jerome A., Smith, Matthew D., Field, Daniel E., C-P. Massabuau, Fabien, Mandal, Soumen, Pomeroy, James, Wallis, David J., Oliver, Rachel A., Thayne, Iain, Kuball, Martin, Williams, Oliver A.

“…Diamond heat-spreaders for gallium nitride (GaN) devices currently depend upon a robust wafer bonding process. Bonding-free membrane methods demonstrate…”
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Three-Photon Excitation of InGaN Quantum Dots by Villafañe, Viviana, Scaparra, Bianca, Rieger, Manuel, Appel, Stefan, Trivedi, Rahul, Zhu, Tongtong, Jarman, John, Oliver, Rachel A, Taylor, Robert A, Finley, Jonathan J, Müller, Kai

“…We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, while resonant two-photon excitation is highly…”
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Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors by Griffin, Peter, Zhu, Tongtong, Oliver, Rachel

“…Utilising dislocation-related vertical etching channels in gallium nitride, we have previously demonstrated a simple electrochemical etching (ECE) process that…”
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Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth by Massabuau, Fabien, Kappers, Menno, Humphreys, Colin, Oliver, Rachel

“…Here, we study the mechanisms underlying a method used to limit the formation of trench defects in InGaN/GaN quantum well structures by using H2 in the carrier…”
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Ultrafast, Polarized, Single-Photon Emission from m‑Plane InGaN Quantum Dots on GaN Nanowires by Puchtler, Tim J, Wang, Tong, Ren, Christopher X, Tang, Fengzai, Oliver, Rachel A, Taylor, Robert A, Zhu, Tongtong

“…We demonstrate single-photon emission from self-assembled m-plane InGaN quantum dots (QDs) embedded on the side-walls of GaN nanowires. A combination of…”
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Room temperature quantum emitters in aluminum nitride epilayers on silicon by Cannon, Joseph K., Bishop, Sam G., Eggleton, Katie M., Yağcı, Huseyin B., Clark, Rachel N., Ibrahim, Sherif R., Hadden, John P., Ghosh, Saptarsi, Kappers, Menno J., Oliver, Rachel A., Bennett, Anthony J.

“…Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on…”
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Ureteric stents on extraction strings: a systematic review of literature by Oliver, Rachel, Wells, Hannah, Traxer, Olivier, Knoll, Thomas, Aboumarzouk, Omar, Biyani, Chandra S., Somani, Bhaskar K.

“…Short-term ureteric stents are commonly placed after ureteroscopy. The removal usually entails having a cystoscopy, but recently, endourologists have been…”
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Let’s fix the system, not the scientists by Oliver, Rachel A.

“…Diversity initiatives typically focus on empowering scientists from minority backgrounds to navigate academia. Although such efforts can be valuable, the…”
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Dislocation‐Induced Structural and Luminescence Degradation in InAs Quantum Dot Emitters on Silicon by Hughes, Eamonn T., Kusch, Gunnar, Selvidge, Jennifer, Bonef, Bastien, Norman, Justin, Shang, Chen, Bowers, John E., Oliver, Rachel A., Mukherjee, Kunal

“…This study probes the extent to which dislocations reduce carrier lifetimes and alter growth morphology and luminescence in InAs quantum dots (QD) grown on…”
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Core–Shell Nanorods as Ultraviolet Light-Emitting Diodes by Cameron, Douglas, Coulon, Pierre-Marie, Fairclough, Simon, Kusch, Gunnar, Edwards, Paul R., Susilo, Norman, Wernicke, Tim, Kneissl, Michael, Oliver, Rachel A., Shields, Philip A., Martin, Robert W.

“…Existing barriers to efficient deep ultraviolet (UV) light-emitting diodes (LEDs) may be reduced or overcome by moving away from conventional planar growth and…”
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