Search Results - "Olesberg, J T"

Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces by Goldflam, M. D., Ruiz, I., Howell, S. W., Tauke-Pedretti, A., Anderson, E. M., Wendt, J. R., Finnegan, P., Hawkins, S., Coon, W., Fortune, T. R., Shaner, E. A., Kadlec, C., Olesberg, J. T., Klem, J., Webster, P. T., Sinclair, M. B., Kim, J. K., Peters, D. W., Beechem, T. E.

“…Here, the design, fabrication, and characterization of an actively tunable long-wave infrared detector, made possible through direct integration of a…”
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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices by Olson, B. V., Murray, L. M., Prineas, J. P., Flatté, M. E., Olesberg, J. T., Boggess, T. F.

“…Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II…”
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Room-temperature electron spin relaxation in bulk InAs by Boggess, Thomas F., Olesberg, J. T., Yu, C., Flatté, Michael E., Lau, Wayne H.

“…Polarization-resolved, subpicosecond pump–probe measurements at a wavelength of 3.43 μm are used to determine the electron spin relaxation time T1 in bulk InAs…”
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Temperature-Insensitive Near-Infrared Method for Determination of Protein Concentration during Protein Crystal Growth by Olesberg, J. T, Arnold, M. A, Hu, Shih-Yao B, Wiencek, John M

“…A temperature-insensitive method for measuring protein concentration in aqueous solutions using near-infrared spectroscopy is described. The method, which is…”
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Theoretical comparison of mid–wavelength infrared and long–wavelength infrared lasers by Flatté, Michael E., Olesberg, J. T., Grein, C. H.

“…The ideal performance of bulk, quantum–well and superlattice interband and inter–subband active regions for III–V laser diodes emitting from 3–11 μm was…”
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Internal quantum efficiency in 6.1 Å superlattices of 77% for mid-wave infrared emitters by Muhowski, A. J., Muellerleile, A. M., Olesberg, J. T., Prineas, J. P.

“…Two new superlattices with high internal quantum efficiency at high injection, InAs/AlGaInSb and InAs/GaInSb/InAs/AlAsSb, are presented and compared with…”
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Flip Chip Bonding of 68 [Formula Omitted] 68 MWIR LED Arrays by Das, N.C, Taysing-Lara, M, Olver, K.A, Kiamilev, F, Prineas, J.P, Olesberg, J.T, Koerperick, E.J, Murray, L.M, Boggess, T.F

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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Flip Chip Bonding of 68 x 68 MWIR LED Arrays by CHANDRA DAS, Naresh, TAYSING-LARA, Monica, ANDERSON OLVER, Kimberley, KIAMILEV, Fouad, PRINEAS, J. P, OLESBERG, J. T, KOERPERICK, E. J, MURRAY, L. M, BOGGESS, Tom F

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Flip Chip Bonding of 68 \times 68 MWIR LED Arrays by Das, N.C., Taysing-Lara, M., Olver, K.A., Kiamilev, F., Prineas, J.P., Olesberg, J.T., Koerperick, E.J., Murray, L.M., Boggess, T.F.

“…The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was…”
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III-V interband 5.2 μm laser operating at 185 K by Flatté, Michael E., Hasenberg, T. C., Olesberg, J. T., Anson, S. A., Boggess, Thomas F., Yan, Chi, McDaniel, D. L.

“…We report the operation of a III-V interband laser at a wavelength beyond 5 μm and temperatures above 90 K. The active region consists of a strain compensated…”
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Theoretical performance of mid-infrared broken-gap multilayer superlattice lasers by Flatté, Michael E., Olesberg, J. T., Anson, S. A., Boggess, Thomas F., Hasenberg, T. C., Miles, R. H., Grein, C. H.

“…We present calculations of the differential gain and threshold current densities for a 3.7 μm multiple quantum well structure consisting of a “well” composed…”
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Ideal performance of cascade and noncascade intersubband and interband long-wavelength semiconductor lasers by Flatté, Michael E., Olesberg, J. T., Grein, C. H.

“…The ideal performance of cascade and noncascade intersubband and interband laser active regions is directly compared in a cavity-insensitive way. For devices…”
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Optimization of active regions in midinfrared lasers by Olesberg, J. T., Flatté, Michael E., Brown, B. J., Grein, C. H., Hasenberg, T. C., Anson, S. A., Boggess, Thomas F.

“…The ideal performance of bulk, quantum well, and superlattice active regions for III–V interband midinfrared lasers are compared according to the maximum net…”
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Hot carrier dynamics in a (GaInSb/InAs)/GaInAlAsSb superlattice multiple quantum well measured with mid-wave infrared, subpicosecond photoluminescence upconversion by Jang, D.-J., Olesberg, J. T., Flatté, M. E., Boggess, Thomas F., Hasenberg, T. C.

“…We have extended the technique of subpicosecond photoluminescence upconversion to the mid-wave infrared spectral region and have used this system to…”
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Experimental and theoretical density-dependent absorption spectra in (GaInSb/InAs)/AlGaSb superlattice multiple quantum wells by Olesberg, J. T., Anson, S. A., McCahon, S. W., Flatté, Michael E., Boggess, Thomas F., Chow, D. H., Hasenberg, T. C.

“…A broadly tunable, ultrafast optical parametric oscillator is used to measure carrier-density-dependent absorption spectra in a 340-meV band gap…”
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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes by Hasenberg, T. C., Day, P. S., Shaw, E. M., Magarrell, D. J., Olesberg, J. T., Yu, C., Boggess, Thomas F., Flátte, M. E.

“…We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger…”
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Cascaded active regions in 2.4 μ m GaInAsSb light-emitting diodes for improved current efficiency by Prineas, J. P., Olesberg, J. T., Yager, J. R., Cao, C., Coretsopoulos, C., Reddy, M. H. M.

“…By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4 μ m light-emitting diodes that, for a given light output, operate at reduced…”
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High-Power MWIR Cascaded InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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High-Power MWIR Cascaded InAsaGaSb Superlattice LEDs by Koerperick, E J, Olesberg, J T, Hicks, J L, Prineas, J P, Boggess, T F

“…Midwave IR LEDs operating at 3.8 mum with output powers approaching 25 mW at 77 K are reported. Devices based on the InAs-GaSb superlattice material system…”
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Active Region Cascading for Improved Performance in InAs-GaSb Superlattice LEDs by Koerperick, E.J., Olesberg, J.T., Hicks, J.L., Prineas, J.P., Boggess, T.F.

“…Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of…”
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