Microscopic aspects of potential-induced degradation phenomena and their recovery processes for p-type crystalline Si photovoltaic modules

Processes for potential-induced degradation (PID) and recovery phenomena were characterized using p-type multicrystalline Si photovoltaic modules and by PID test method using Al plate. Very severe PID phenomena accompanied with a drastic reduction in both open-circuit voltage and shunt resistance we...

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Bibliographic Details
Published in:	Current applied physics Vol. 16; no. 12; pp. 1659 - 1665
Main Authors:	Masuda, Atsushi, Akitomi, Minoru, Inoue, Masanao, Okuwaki, Keizo, Okugawa, Atsuo, Ueno, Kiyoshi, Yamazaki, Toshiharu, Hara, Kohjiro
Format:	Journal Article
Language:	English
Published:	Elsevier B.V 01-12-2016 한국물리학회
Subjects:	Crystalline silicon Photovoltaic modules Potential-induced degradation Recovery Reliability 물리학 Crystalline silicon Potential-induced degradation Photovoltaic modules Reliability Recovery
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Summary:	Processes for potential-induced degradation (PID) and recovery phenomena were characterized using p-type multicrystalline Si photovoltaic modules and by PID test method using Al plate. Very severe PID phenomena accompanied with a drastic reduction in both open-circuit voltage and shunt resistance were observed within only several hours. It was found that PID phenomena are strongly accelerated at higher temperature and under higher negative-voltage application, on the other hand, PID phenomena do not necessarily require high humidity in this test method using Al plate. Na diffusion from the cover glass to the Si cell was observed after PID test. Recovery process from PID was also observed by applying positive voltage. However, complete recovery of photovoltaic performances was observed at room temperature in the dark without positive-voltage application for test modules with PID although recovery process requires a few hundred days. •Rapid potential-induced degradation (PID) test method was developed for screening both module materials and structures.•Severe PID phenomena with a decrease in both open-circuit voltage and shunt resistance were observed.•Higher temperature and higher negative applied voltage induce more severe PID.•Positive-voltage application induces no PID and also recovers the I-V characteristics for test PV modules suffering PID.•Complete recovery from middle-degree PID was found even by storing at room temperature without positive voltage application.
Bibliography:	G704-001115.2016.16.12.014
ISSN:	1567-1739 1878-1675
DOI:	10.1016/j.cap.2016.10.001