Search Results - "Oktu, Ozcan"
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Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure
Published in Microelectronic engineering (01-02-2010)“…Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of…”
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A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1-xCx:H
Published in Journal of non-crystalline solids (15-06-2003)“…Authors utilized the constant photocurrent method and steady state photoconductivity measurements to investigate the creation and annealing kinetics of light…”
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Temperature dependent photoluminescence of PECVD a-SiOx:H (x < 2)
Published in Journal of luminescence (01-10-2010)Get full text
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Galvanomagnetic effects in antimony and doped antimony single crystals
Published 01-01-1967“…The twelve components of the magnetoresistivity tensor in antimony up to second order in magnetic field have been measured at 273ºK, 225ºK, 183ºK, 139ºK and…”
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Dissertation -
5
Temperature dependent photoluminescence of PECVD a-SiO x :H ( x<2)
Published in Journal of luminescence (2010)“…The temperature dependent visible photoluminescence (PL) property of a-SiO x :H ( x<2) samples prepared in a PECVD system by using SiH 4+CO 2 gas mixture is…”
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Variation of creation and annealing character of light induced metastable defects in a-Si 1− xC x:H alloys
Published in Solar energy materials and solar cells (2003)“…The creation and annealing kinetics of light induced metastable defects were studied in a set of good quality a-Si 1− x C x :H alloys ( x⩽0.11) using the…”
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Journal Article -
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A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si 1− xC x:H
Published in Journal of non-crystalline solids (2003)“…We have utilised the constant photocurrent method (CPM) and steady state photoconductivity measurements to investigate the creation and annealing kinetics of…”
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Journal Article -
9
Variation of creation and annealing character of light induced metastable defects in a-Si1−xCx:H alloys
Published in Solar energy materials and solar cells (01-04-2003)“…The creation and annealing kinetics of light induced metastable defects were studied in a set of good quality a-Si1-xCx:H alloys (x# < 0.11) using the constant…”
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10
Comparison of the methods used to calculate the density of states from measured subbandgap absorption in a-Si:H and related alloys
Published in Optical materials (01-09-2002)“…Different methods used to calculate the density of states (DOS) from optical absorption spectra measured by the constant photocurrent method in a-Si:H and in…”
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Kinetics of light-induced metastable defect creation and annealing in a-Si:H
Published in Turkish journal of physics (2002)“…Constant Photocurrent Method (CPM) and steady state photoconductivity ments are used to investigate the creation of light-induced metastable defects in a-Si:H…”
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Optimisation of the RF power density to obtain good quality hydrogenated amorphous silicon films in a home-made glow discharge system
Published in Optical materials (01-04-2004)“…A set of hydrogenated amorphous silicon (a-Si:H) films were prepared in a home-made chemical vapour deposition (CVD) system by varying, 20 MHz RF power density…”
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Journal Article