Search Results - "Okabe, Kye"

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  1. 1

    Electrical tuning of phase-change antennas and metasurfaces by Wang, Yifei, Landreman, Patrick, Schoen, David, Okabe, Kye, Marshall, Ann, Celano, Umberto, Wong, H.-S. Philip, Park, Junghyun, Brongersma, Mark L.

    Published in Nature nanotechnology (01-06-2021)
    “…The success of semiconductor electronics is built on the creation of compact, low-power switching elements that offer routing, logic and memory functions. The…”
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    Journal Article
  2. 2

    High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2 by Mleczko, Michal J, Xu, Runjie Lily, Okabe, Kye, Kuo, Hsueh-Hui, Fisher, Ian R, Wong, H.-S. Philip, Nishi, Yoshio, Pop, Eric

    Published in ACS nano (23-08-2016)
    “…Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for…”
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    Journal Article
  3. 3

    Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 by Neumann, Christopher M., Okabe, Kye L., Yalon, Eilam, Grady, Ryan W., Wong, H.-S. Philip, Pop, Eric

    Published in Applied physics letters (25-02-2019)
    “…Phase change memory (PCM) is an emerging data storage technology; however, its programming is thermal in nature and typically not energy-efficient. Here, we…”
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    Journal Article
  4. 4

    Ternary content-addressable memory with MoS2 transistors for massively parallel data search by Yang, Rui, Li, Haitong, Smithe, Kirby K. H., Kim, Taeho R., Okabe, Kye, Pop, Eric, Fan, Jonathan A., Wong, H.-S. Philip

    Published in Nature electronics (15-03-2019)
    “…Ternary content-addressable memory (TCAM) is specialized hardware that can perform in-memory search and pattern matching for data-intensive applications…”
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    Journal Article
  5. 5
  6. 6

    Investigating the Switching Mechanism of Interfacial Phase Change Memory by Okabe, Kye Loren

    Published 01-01-2019
    “…Phase Change Memory (PCM) is a leading candidate for next generation data storage, but it typically suffers from high switching (RESET) current density (20--30…”
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    Dissertation
  7. 7

    Energy-Efficient Phase Change Memory Programming by Nanosecond Pulses by Yalon, Eilam, Okabe, Kye, Neumann, Christopher M., Wong, H.-S. Philip, Pop, Eric

    Published in 2018 76th Device Research Conference (DRC) (01-06-2018)
    “…Phase change memory (PCM) is an important storage-class memory technology and a promising candidate for neuromorphic applications. PCM is based on the…”
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    Conference Proceeding
  8. 8

    Training a Fully Convolutional Neural Network to Route Integrated Circuits by Jain, Sambhav R, Okabe, Kye

    Published 27-06-2017
    “…We present a deep, fully convolutional neural network that learns to route a circuit layout net with appropriate choice of metal tracks and wire class…”
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    Journal Article
  9. 9

    Electrical Tuning of Phase Change Antennas and Metasurfaces by Wang, Yifei, Landreman, Patrick, Schoen, David, Okabe, Kye, Marshall, Ann, Celano, Umberto, Wong, H. -S. Philip, Park, Junghyun, Brongersma, Mark L

    Published 29-08-2020
    “…The success of semiconductor electronics is built on the creation of compact, low-power switching elements that offer routing, logic, and memory functions. The…”
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    Journal Article
  10. 10

    2D molybdenum disulfide (MoS2) transistors driving RRAMs with 1T1R configuration by Rui Yang, Haitong Li, Smithe, Kirby K. H., Kim, Taeho R., Okabe, Kye, Pop, Eric, Fan, Jonathan A., Wong, H.-S Philip

    “…We demonstrate the first 1-transistor-1-resistor (1T1R) memory cell using the atomically thin molybdenum disulfide (MoS2) field-effect transistor (FET) and…”
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    Conference Proceeding
  11. 11

    Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2 by Neumann, Christopher M, Okabe, Kye L, Yalon, Eilam, Grady, Ryan W, Wong, H. -S. Philip, Pop, Eric

    Published 01-03-2019
    “…Phase change memory (PCM) is an emerging data storage technology, however its programming is thermal in nature and typically not energy-efficient. Here we…”
    Get full text
    Journal Article
  12. 12

    Ultrathin (∼2nm) HfOx as the fundamental resistive switching element: Thickness scaling limit, stack engineering and 3D integration by Liang Zhao, Zizhen Jiang, Hong-Yu Chen, Joon Sohn, Okabe, Kye, Magyari-Kope, Blanka, Wong, H.-S Philip, Nishi, Yoshio

    “…This paper addresses the thickness scaling limit of HfO x -based RRAM through a combination of theoretical calculations of electron transport and experimental…”
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    Conference Proceeding
  13. 13

    High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2 by Mleczko, Michal J, Runjie, Xu, Okabe, Kye, Kuo, Hsueh-Hui, Fisher, Ian R, Wong, H. -S. Philip, Nishi, Yoshio, Pop, Eric

    Published 02-08-2016
    “…ACS Nano, July 2016 Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically-thin limit. Here we introduce a facile…”
    Get full text
    Journal Article