Search Results - "Ojha, J.J."

A fully integrated SiGe receiver IC for 10-Gb/s data rate by Greshishchev, Y.M., Schvan, P., Showell, J.L., Mu-Liang Xu, Ojha, J.J., Rogers, J.E.

“…A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain…”
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A fully integrated SiGe receiver IC for 10 Gb/s data rate by Greshishchev, Y.M., Schvan, P., Showell, J.L., Mu-Liang Xu, Ojha, J.J., Rogers, J.E.

“…A silicon germanium (SiGe) receiver IC integrates most of the 10 Gb/s SONET receiver functions previously implemented using GaAs HBT components. The receiver…”
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Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET) by Ojha, J.J., Simmons, J.G., Mand, R.S., SpringThorpe, A.J.

“…The first realization of a novel heterostructure device, the bistable field-effect transistor (BISFET), is reported. The device uses an n-channel GaAs/AlGaAs…”
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Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED by Ojha, J.J., Simmons, J.G., Mand, R.S., SpringThorpe, A.J.

“…The bistable field effect transistor (BISFET) is a novel inversion-channel switching device exhibiting abrupt current transitions and hysteresis in its output…”
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Optical and electrical oscillations in double-heterojunction negative differential resistance devices by Kovacic, S.J., Ojha, J.J., Simmons, J.G., Jessop, P.E., Mand, R.S., SpringThorpe, A.J.

“…The observation of optical and electrical oscillations is reported in a GaAs/AlGaAs digital optoelectronic switch (DOES) structure. The oscillations are…”
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The bistable field effect transistor (BISFET): a novel optoelectronic switching device by Ojha, J.J., Simmons, J.G., Vetter, A.S., Mand, R.S., SpringThorpe, A.J.

“…A novel optoelectronic device has recently been developed using an inversion channel heterostructure. This device, the bistable field effect transistor…”
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