Search Results - "Oila, J."

Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy by Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., Han, J. Y.

“…Positron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy…”
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Vacancy defects as compensating centers in Mg-doped GaN by Hautakangas, S, Oila, J, Alatalo, M, Saarinen, K, Liszkay, L, Seghier, D, Gislason, H P

“…We apply positron annihilation spectroscopy to identify V(N)-Mg(Ga) complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth…”
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Observation of defect complexes containing Ga vacancies in GaAsN by Toivonen, J., Hakkarainen, T., Sopanen, M., Lipsanen, H., Oila, J., Saarinen, K.

“…Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of…”
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Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy by Saarinen, K., Seppälä, P., Oila, J., Hautojärvi, P., Corbel, C., Briot, O., Aulombard, R. L.

“…We have applied positron spectroscopy to study the formation of vacancy defects in undoped n-type metal organic chemical vapor deposition grown GaN, where the…”
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Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy by Oila, J., Kemppinen, A., Laakso, A., Saarinen, K., Egger, W., Liszkay, L., Sperr, P., Lu, H., Schaff, W. J.

“…We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al2O3 by molecular beam epitaxy. Their concentration decreases from…”
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Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry by Rummukainen, M., Oila, J., Laakso, A., Saarinen, K., Ptak, A. J., Myers, T. H.

“…Positron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying…”
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Ga vacancies and grain boundaries in GaN by Oila, J., Saarinen, K., Wickenden, A. E., Koleske, D. D., Henry, R. L., Twigg, M. E.

“…We have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 2–5 μm. Negatively charged Ga…”
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Vacancy defects in epitaxial InN: identification and electrical properties by Laakso, A, Oila, J, Kemppinen, A, Saarinen, K, Egger, W, Liszkay, L, Sperr, P, Lu, H, Schaff, W.J

“…We have used a low-energy positron beam to identify and quantify the dominant vacancy defects in InN layers grown on Al 2O 3 by molecular beam epitaxy. By…”
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Chirally modified gold nanoparticles: nanostructured chiral ligands for catalysis by Oila, Markku J., Koskinen, Ari M.P.

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Target chamber for a slow positron beam: optimization of count rate and minimization of backscattering effects by Oila, J, Ranki, V, Kivioja, J, Saarinen, K, Hautojärvi, P

“…Positrons, which scatter back from the target and annihilate in chamber walls near the detectors, may cause a significant error in annihilation parameters. We…”
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Observation of Ga vacancies and negative ions in undoped and Mg-doped GaN bulk crystals by Saarinen, K, Nissilä, J, Oila, J, Ranki, V, Hakala, M, Puska, M.J, Hautojärvi, P, Likonen, J, Suski, T, Grzegory, I, Lucznik, B, Porowski, S

“…Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases…”
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The stabilization of a positron lifetime spectrometer with a high-accuracy time reference by Nissilä, J., Karppinen, M., Rytsölä, K., Oila, J., Saarinen, K., Hautojärvi, P.

“…A high-accuracy time reference for a fast coincidence apparatus using scintillation detectors is constructed. The reference peak is created by feeding fast…”
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The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements by Oila, J, Saarinen, K, Laine, T, Hautojärvi, P, Uusimaa, P, Pessa, M, Likonen, J

“…We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary…”
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Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in AlxGa1-xAs by OILA, J, LAINE, T, NISSILÄ, J, FALLSTRÖM, K, SAARINEN, K, HAUTOJÄRVI, P

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Ligand creation via linking—a rapid and convenient method for construction of novel supported PyOX-ligands by Oila, Markku J., Tois, Jan E., Koskinen, Ari M.P.

“…A novel supported amino alcohol linker was synthesized and utilized for attachment of picolinic acid derivatives onto different supports. When the resin bound…”
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Study of the Effects of Mg and Be Co-Doping in GaN Layers by Naranjo, F.B., Sánchez-García, M. A., Pau, J. L., Jiménez, A., Calleja, E., Muñoz, E., Oila, J., Saarinen, K., Hautojárvi, P.

“…GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma‐assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light…”
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Synthesis of a novel carboxy functionalized PyOX-ligand by Oila, Markku J., Tois, Jan E., Koskinen, Ari M.P.

“…[Display omitted] A short and convenient synthesis of a carboxy functionalized PyOX-core is presented. The carboxy functionality offers a wide variety of…”
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Publisher’s Note: “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy” [Appl. Phys. Lett. 82 , 3433 (2003)] by Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D. C., Molnar, R. J., Park, S. S., Lee, S. K., Han, J. Y.

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Sample illumination facility for slow positron beam studies and its application to the photoionization cross-section of the DX center in Al xGa 1− xAs by Oila, J, Laine, T, Nissilä, J, Fallström, K, Saarinen, K, Hautojärvi, P

“…We have built a sample illumination facility for slow positron beam studies. It enables the illumination of the sample with monochromatic light in visible and…”
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Mild and Efficient Synthesis of 2-Indole-2′-oxazolines at Room Temperature-A Simple Access to Novel IndOX Ligands by Oila, Markku J., Tois, Jan E., Koskinen, Ari M. P.

“…A simple synthesis of a totally new enantiopure compound family, the IndOX compounds, is presented. These chiral compounds can be prepared in two simple steps…”
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