Search Results - "Ohyu, Kiyonori"

Advantages of fluorine introduction in boron implanted shallow p+/n-junction formation by OHYU, K, ITOGA, T, NATSUAKI, N

“…The advantages of fluorine introduction on fabrication of shallow p + /n-junctions have been demonstrated. This was done by implanting fluorine onto the boron…”
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Improvement of SiO2/Si interface properties utilising fluorine ion implantation and drive-in diffusion by OHYU, K, ITOGA, T, NISHIOKA, Y, NATSUAKI, N

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Recrystallization of silicon-on-insulator structures by sinusoidally-scanned electron beams by ISHIWARA, H, OHYU, K, HORITA, S, FURUKAWA, S

“…This paper describes the recrystallization by an electron beam of Si films deposited on SiO 2 /Si structures. To achieve pseudo-line-shaped heating, a spot…”
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Direct observation of worst-bit leakage currents of DRAM by Mori, Y., Kamohara, S., Moniwa, M., Ohyu, K., Yamanaka, T., Yamada, R.

“…We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells…”
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Improvement of Data Retention Time Property by Reducing Vacancy-Type Defect in DRAM Cell Transistor by Okonogi, K., Ohyu, K., Umeda, T., Miyake, H., Fujieda, S.

“…As electric equipment for portable spreads through a world widely, development of a low power consumption device is required strongly. DRAM development also…”
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A mechanism and a reduction technique for large reverse leakage current in p-n junctions by Ohyu, K., Ohkura, M., Hiraiwa, A., Watanabe, K.

“…The origin of anomalously large p-n junction leakage current in Si is investigated. The leakage has strong electric field dependence and weak temperature…”
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Hot-electron hardened Si-gate MOSFET utilizing F implantation by Nishioka, Y., Ohyu, K., Ohji, Y., Natuaki, N., Mukai, K., Ma, T.-P.

“…A technique is presented for incorporating fluorine (F) into the gate-oxide film, and the subsequent improvement of channel-hot-electron hardness of the…”
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A new experimental method for evaluating electric field at the junctions of DRAM cell transistors and the effect of electric field strength on the retention characteristics of DRAM by Mori, Y., Takeda, Y., Kimura, S., Ohyu, K., Uchiyama, H., Yamada, R.

“…A new method for the analysis of DRAM data retention characteristics is developed. We use a test element group (TEG) and detailed simulation to analyze the…”
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Design and performance of 0.1- mu m CMOS devices using low-impurity-channel transistors (LICT's) by Aoki, M., Ishii, T., Yoshimura, T., Kiyota, Y., Iijima, S., Yamanaka, T., Kure, T., Ohyu, K., Nishida, T., Okazaki, S., Seki, K., Shimohigashi, K.

“…0.1- mu m CMOS devices using low-impurity-channel transistors (LICTs) with dual-polysilicon gates have been fabricated by nondoped epitaxial growth technology,…”
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The origin of variable retention time in DRAM by Mori, Y., Ohyu, K., Okonogi, K., Yamada, R.

“…To investigate the origin of DRAM variable retention time (VRT), we use test structures and carefully measure the time dependence of leakage current in DRAM…”
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Advanced process device technology for 0.3- mu m high-performance bipolar LSIs by Tamaki, Y., Shiba, T., Kure, T., Ohyu, K., Nakamura, T.

“…A new method is developed for forming shallow emitter/bases, collectors, and graft bases suitable for high-performance 0.3- mu m bipolar LSIs. Fabricated 0.5-…”
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Channel length and width dependence of hot-carrier hardness in fluorinated MOSFETs by Nishioka, Y., Ohyu, K., Ohji, Y., Ma, T.-P.

“…A study of the interface degradation caused by channel-hot-electron (CHE) and substrate-hot-electron (SHE) injection in fluorinated MOSFETs and in…”
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Improvement of SiO 2 /Si Interface Properties Utilising Fluorine Ion Implantation and Drive-in Diffusion by Ohyu, Kiyonori, Itoga, Toshihiko, Nishioka, Yasushiro, Natsuaki, Nobuyoshi

“…Thermal drive-in diffusion of ion-implanted F atoms has been employed to fluorinate SiO 2 /Si interfaces and thereby improve their electrical properties. The…”
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Radiation hardened micron and submicron MOSFETs containing fluorinated oxides by Nishioka, Y., Ohyu, K., Ohji, Y., Kato, M., da Silva, E.F., Ma, T.P.

“…The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of…”
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Radiation effects on fluorinated field oxides and associated devices by Nishioka, Y., Itoga, T., Ohyu, K., Kato, M., Ma, T.-P.

“…Fluorine has been introduced into the LOCOS field oxide by high-energy (2-MeV) F implantation and subsequent annealing at 950 degrees C for 60 min. Improved…”
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Lattice strain design in W/WN/poly-Si gate DRAM for improving data retention time by Okonogi, K., Ohyu, K., Toda, A., Kobayashi, H.

“…A lattice strain design based on a novel model drastically improves the data retention property of DRAMs fabricated through a polymetal gate (W/WN/Poly-Si)…”
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Hot-electron damage-resistant Si-gate submicrometer MOSFETs with a fluorinated oxide by Nishioka, Y., Ohji, Y., Ohyu, K., Mukai, K., Ma, T.P.

“…It has been reported previously (see E.F. da Silva, Jr. et al., 1987) that, by introducing minute amounts of fluorine in thermal SiO/sub 2/, the reliability of…”
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Comparison of TiSi2 and WSI2 Silicided Shallow Junctions for Sub-Micron CMOSs by Kobayashi, Nobuyoshi, Hashimoto, Naotaka, Ohyu, Kiyonori, Kaga, Toru, Iwata, Seiichi

“…With the decrease of the junction depth of sub-micron CMOS devices, the development of low-resistivity shallow junctions is much needed. Self-aligned silicided…”
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