Search Results - "Ohtani, Noboru"

Polarized Raman spectroscopy of phosphorous doped diamond films by Matsuoka, Minori, Tsuchida, Yuki, Ohtani, Noboru, Yamada, Takatoshi, Koizumi, Satoshi, Shikata, Shinichi

“…Polarized Raman measurements were performed on P-doped diamond films to investigate the origin of the peaks in the lower wave numbers, which are unknown to…”
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Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals by Mannen, Yuina, Shimada, Kana, Taniguchi, Chisato, Ohtani, Noboru

“…•The stability of multiple SSFs in heavily N-doped 4H-SiC crystals was investigated.•The calculated energy levels in SSFs were compared with the experimental…”
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Surface morphology and step instability on the (0001̄)C facet of physical vapor transport-grown 4H–SiC single crystal boules by Yamaguchi, Tomoki, Ohtomo, Kohei, Sato, Shunsuke, Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Yano, Takayuki

“…Surface morphologies on the (0001¯) C facet of 4H–SiC boules grown using the physical vapor transport method were examined in various scales (from millimeter…”
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Foreword Special Issue on Wide Bandgap Power Switching Devices for Energy Efficiency and Renewable Energy Integration by Shenai, Krishna, Bakowski, Mietek, Ohtani, Noboru

“…Wide bandgap (WBG) semiconductors, especially silicon carbide (SiC) and gallium nitride (GaN), promise transformational advances in electrical power systems,…”
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Evaluation of diamond mosaic wafer crystallinity by electron backscatter diffraction by Matsushita, Akio, Fujimori, Naoji, Tsuchida, Yuki, Ohtani, Noboru, Dojima, Daichi, Koide, Kazunori, Kaneko, Tadaaki, Shikata, Shinichi

“…A mosaic substrate is a promising candidate to create large size single crystal diamonds for various types of applications. In this study, the crystal…”
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Formation of basal plane stacking faults on the (0001¯) facet of heavily nitrogen-doped 4H-SiC single crystals during physical vapor transport growth by Ohtomo, Kohei, Matsumoto, Nana, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

“…•The stacking fault (SF) formation in heavily N-doped 4H-SiC boules was investigated.•SFs detected on the (0001¯) facet of the boules showed characteristic…”
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Evaluation of growth sector orientation changes of high B doped high pressure and high temperature diamond by high resolution electron backscatter diffraction study by Matsushita, Akio, Tsuchida, Yuki, Matsuoka, Minori, Ohtani, Noboru, Ashida, Koji, Dojima, Daichi, Koide, Kazunori, Kaneko, Tadaaki, Shikata, Shinichi

“…The orientation of growth sectors of highly B doped p+ high pressure and high temperature (HPHT) substrates were investigated by high angular resolution…”
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Structural investigation of the seeding process for physical vapor transport growth of 4H–SiC single crystals by Ohtani, Noboru, Ohshige, Chikashi, Katsuno, Masakazu, Fujimoto, Tatsuo, Sato, Shinya, Tsuge, Hiroshi, Ohashi, Wataru, Yano, Takayuki, Matsuhata, Hirofumi, Kitabatake, Makoto

“…Structural investigation of the seeding process for the physical vapor transport (PVT) growth of 4H–SiC single crystals was conducted by high-resolution x-ray…”
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SEM and ECC imaging study of step-bunched structure on 4H-SiC epitaxial layers by Tabuchi, Yuki, Sonoda, Masashi, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

“…Step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface was investigated using low-voltage scanning electron microscopy (LVSEM) and low-energy…”
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Investigation of the surface morphology and stacking fault nucleation on the (000-1)C facet of heavily nitrogen-doped 4H-SiC boules by Ohtomo, Kohei, Matsumoto, Nana, Ashida, Koji, Kaneko, Tadaaki, Ohtani, Noboru, Katsuno, Masakazu, Sato, Shinya, Tsuge, Hiroshi, Fujimoto, Tatsuo

“…The stacking fault formation during physical vapor transport growth of heavily nitrogen-doped (mid-10 19 cm -3 ) 4H-SiC crystals was investigated. Low-voltage…”
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Analysis of Basal Plane Bending and Basal Plane Dislocations in 4H-SiC Single Crystals by Ohtani, Noboru, Katsuno, Masakazu, Fujimoto, Tatsuo, Nakabayashi, Masashi, Tsuge, Hiroshi, Yashiro, Hirokatsu, Aigo, Takashi, Hirano, Hosei, Hoshino, Taizo, Ohashi, Wataru

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Analysis of Volatile Compounds Released during the Grinding of Roasted Coffee Beans Using Solid-Phase Microextraction by Akiyama, Masayuki, Murakami, Kazuya, Ohtani, Noboru, Iwatsuki, Keiji, Sotoyama, Kazuyoshi, Wada, Akira, Tokuno, Katsuya, Iwabuchi, Hisakatsu, Tanaka, Kiyofumi

“…A dynamic solid-phase microextraction (SPME) method to sample fresh headspace volatile compounds released during the grinding of roasted coffee beans was…”
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4H-SiC(0001) Basal Plane Stability during the Growth of Epitaxial Graphene on Inverted-Mesa Structures by Ushio, Shoji, Kutsuma, Yasunori, Yoshii, Arata, Tamai, Naoto, Ohtani, Noboru, Kaneko, Tadaaki

“…The epitaxial graphene growth at the 4H-SiC(0001) surface with intentionally inserted step-free basal plane regions was performed by high temperature annealing…”
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Growth of large high-quality SiC single crystals by Ohtani, Noboru, Fujimoto, Tatsuo, Katsuno, Masakazu, Aigo, Takashi, Yashiro, Hirokatsu

“…The availability of large high-quality silicon carbide (SiC) single crystals is a key issue in the development of the full potential of SiC-based device…”
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Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals by Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

“…The dislocation formation and propagation processes in physical vapor transport (PVT) grown 4H silicon carbide (4H–SiC) single crystals have been investigated…”
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Sublimation growth of 6H- and 4H-SiC single crystals in the [11¯0 0] and [1 12¯0] directions by Takahashi, Jun, Ohtani, Noboru, Katsuno, Masakazu, Shinoyama, Seiji

“…Sublimation growth of 6H- and 4H-SiC single crystals in the [1 1¯0 0] and [1 1 2¯ 0] directions has been carried out by the modified-Lely method. Transport…”
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Analysis of diamond dislocations by Raman polarization measurement by Takeuchi, Marika, Yasuoka, Mikitaka, Ishii, Marino, Ohtani, Noboru, Shikata, Shinichi

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Seed surface orientation dependence of the defect formation at the initial stage of physical vapor transport growth of 4H-SiC crystals by Yodo, Mikako, Nakai, Asahi, Tamura, Shungo, Ohtani, Noboru

“…•Seed orientation dependence of defect formation at initial stage of 4H-SiC PVT growth was studied.•TSD formation was almost fully suppressed on a…”
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Undulated Step Structure on the (0001¯) Facet of Physical Vapor Transport-Grown 4H-SiC Crystals by Shinya, Hiroaki, Nakano, Masataka, Ohtani, Noboru

“…The step structure on the (0001¯)C facet of 4H-SiC boules grown by the physical vapor transport growth method with different nitrogen doping concentrations was…”
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Dislocation processes during SiC bulk crystal growth by Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo

“…Dislocation processes during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals were investigated by defect selective etching. It…”
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