Search Results - "Ohshita, Y."

Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack by Kamioka, T., Hayashi, Y., Isogai, Y., Nakamura, K., Ohshita, Y.

“…Workfunction of reactive-plasma deposited indium-tin-oxide (RPD-ITO) at the ITO/SiO2 interface, which is referred as interface workfunction, and the…”
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Novel material for super high efficiency multi-junction solar cells by Ohshita, Y., Suzuki, H., Kojima, N., Tanaka, T., Honda, T., Inagaki, M., Yamaguchi, M.

“…For realizing a future four-junction solar cell InGaP/GaAs/InGaAsN/Ge with high conversion efficiency of over 40% (AM1.5G), we are developing the chemical beam…”
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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001) by Takahasi, M., Nakata, Y., Suzuki, H., Ikeda, K., Kozu, M., Hu, W., Ohshita, Y.

“…The molecular-beam epitaxial growth processes of GaAs on Si(001) were investigated using in situ synchrotron X-ray diffraction. Three-dimensional X-ray…”
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Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells by Arafune, K., Sasaki, T., Wakabayashi, F., Terada, Y., Ohshita, Y., Yamaguchi, M.

“…We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier…”
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Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy by Mizukami, Y, Kosemura, D, Numasawa, Y, Ohshita, Y, Ogura, A

“…Quantum confinement effect in the nanocrystal-Si (nc-Si) was evaluated by Raman spectroscopy. The nc-Si dot layers were fabricated by the H2 plasma treatment…”
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Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy by Saito, K., Nishimura, K., Suzuki, H., Ohshita, Y., Yamaguchi, M.

“…The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films…”
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Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers by Inoue, M., Sugimoto, H., Tajima, M., Ohshita, Y., Ogura, A.

“…Microscopic and spectroscopic photoluminescence (PL) mapping was performed on a region including intra-grain defects in multicrystalline silicon wafers in the…”
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Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source by Suzuki, H., Nishimura, K., Lee, H.S., Ohshita, Y., Kojima, N., Yamaguchi, M.

“…Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films,…”
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Electrical properties of GaAsN film grown by chemical beam epitaxy by Nishimura, K., Suzuki, H., Saito, K., Ohshita, Y., Kojima, N., Yamaguchi, M.

“…The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied,…”
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Present status and future of crystalline silicon solar cells in Japan by Yamaguchi, M., Ohshita, Y., Arafune, K., Sai, H., Tachibana, M.

“…Crystalline silicon solar cells show promise for further improvement of cell efficiency and cost reduction by developing process technologies for large-area,…”
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Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates by Sasaki, T., Arafune, K., Metzger, W., Romero, M.J., Jones, K., Al-Jassim, M., Ohshita, Y., Yamaguchi, M.

“…Effects of thermal annealing on carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates were investigated. Thermal annealing to the…”
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Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth by SUZUKI, H, NISHIMURA, K, SAITO, K, OHSHITA, Y, KOJIMA, N, YAMAGUCHI, M

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Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells by Lee, Hae-Seok, Nishimura, K., Yagi, Y., Tachibana, M., Ekins-Daukes, N.J., Ohshita, Y., Kojima, N., Yamaguchi, M.

“…Chemical beam epitaxy (CBE) offers a new growth technique for InGaAsN films that are expected to provide the third cell in an ultra-efficiency 4-junction…”
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Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells by Sasaki, T., Arafune, K., Lee, H.S., Ekins-Daukes, N.J., Tanaka, S., Ohshita, Y., Yamaguchi, M.

“…Lattice-mismatched In 0.16Ga 0.84As solar cells were grown on GaAs substrates using graded In x Ga 1− x As buffer layers and homogenous In 0.16Ga 0.84As buffer…”
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Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon by Ohshita, Y., Nishikawa, Y., Tachibana, M., Tuong, V.K., Sasaki, T., Kojima, N., Tanaka, S., Yamaguchi, M.

“…The grain size distribution of B-doped cast-grown polycrystalline Si could not explain the minority carrier lifetime map. The lifetime was not mainly…”
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Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas by Ohshita, Y.

“…The growth mechanism of SiC CVD using CH3SiH3 (1% CH3SiH3 diluted by 99%H2) as a source gas is studied by the experiment with macro/microcavity method. It is…”
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Identification of N-H related defects in GaAsN grown by chemical beam epitaxy by Tanaka, T, Suzuki, H, Kojima, N, Ohshita, Y, Yamaguchi, M

“…Three infrared active defects in GaAsN grown by chemical beam epitaxy (CBE) are identified as N-H related defects which are determinative of electrical…”
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Ni-silicide precursor for gate electrodes by Ishikawa, M., Muramoto, I., Machida, H., Imai, S., Ogura, A., Ohshita, Y.

“…Ni-silicide film was deposited at a low temperature of 160 °C by CVD using a Ni(PF 3) 4/Si 3H 8 gas system. Injecting Si 3H 8 during the Ni deposition does not…”
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Improvement of minority-carrier lifetime in GaAsN grown by chemical beam epitaxy by Honda, T, Inagaki, M, Suzuki, H, Kojima, N, Ohshita, Y, Yamaguchi, M

“…Minority-carrier lifetime (electron) in p-type GaAsN film is improved by chemical beam epitaxy (CBE) and thermal annealing. Growth rate (GR) in CBE is an…”
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Study of GaAsN thin film structures by X-ray reciprocal space mapping for multi-junction solar cell application by Suzuki, H, Kojima, N, Ohshita, Y, Yamaguchi, M

“…Structural difference between high and low N induced scattering center (SC N ) concentration GaAsN films grown on GaAs substrates has been investigated by…”
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