Search Results - "Ohlberg, Douglas A. A"

Localization of lattice dynamics in low-angle twisted bilayer graphene by Gadelha, Andreij C., Ohlberg, Douglas A. A., Rabelo, Cassiano, Neto, Eliel G. S., Vasconcelos, Thiago L., Campos, João L., Lemos, Jessica S., Ornelas, Vinícius, Miranda, Daniel, Nadas, Rafael, Santana, Fabiano C., Watanabe, Kenji, Taniguchi, Takashi, van Troeye, Benoit, Lamparski, Michael, Meunier, Vincent, Nguyen, Viet-Hung, Paszko, Dawid, Charlier, Jean-Christophe, Campos, Leonardo C., Cançado, Luiz G., Medeiros-Ribeiro, Gilberto, Jorio, Ado

“…Twisted bilayer graphene is created by slightly rotating the two crystal networks in bilayer graphene with respect to each other. For small twist angles, the…”
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Memristive switching mechanism for metal oxide metal nanodevices by Stewart, Duncan R, Yang, J. Joshua, Pickett, Matthew D, Li, Xuema, Ohlberg, Douglas A. A, Williams, R. Stanley

“…Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memory and could lead to novel forms of computing. However,…”
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Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch by Choi, Byung Joon, Torrezan, Antonio C, Norris, Kate J, Miao, Feng, Strachan, John Paul, Zhang, Min-Xian, Ohlberg, Douglas A. A, Kobayashi, Nobuhiko P, Yang, J. Joshua, Williams, R. Stanley

“…Highly reproducible bipolar resistance switching was recently demonstrated in a composite material of Pt nanoparticles dispersed in silicon dioxide. Here, we…”
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Study of Molecular Trapping Inside Gold Nanofinger Arrays on Surface-Enhanced Raman Substrates by Kim, Ansoon, Ou, Fung Suong, Ohlberg, Douglas A. A, Hu, Min, Williams, R. Stanley, Li, Zhiyong

“…The binding of trans-1,2-bis(4-pyridyl)-ethylene (BPE) molecules on substrates arrayed with flexible gold nanofingers has been studied by surface-enhanced…”
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The limits of near field immersion microwave microscopy evaluated by imaging bilayer graphene moiré patterns by Ohlberg, Douglas A. A., Tami, Diego, Gadelha, Andreij C., Neto, Eliel G. S., Santana, Fabiano C., Miranda, Daniel, Avelino, Wellington, Watanabe, Kenji, Taniguchi, Takashi, Campos, Leonardo C., Ramirez, Jhonattan C., do Rego, Cássio Gonçalves, Jorio, Ado, Medeiros-Ribeiro, Gilberto

“…Near field scanning Microwave Impedance Microscopy can resolve structures as small as 1 nm using radiation with wavelengths of 0.1 m. Combining liquid…”
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The mechanism of electroforming of metal oxide memristive switches by Joshua Yang, J, Miao, Feng, Pickett, Matthew D, Ohlberg, Douglas A A, Stewart, Duncan R, Lau, Chun Ning, Williams, R Stanley

“…Metal and semiconductor oxides are ubiquitous electronic materials. Normally insulating, oxides can change behavior under high electric fields--through…”
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A Hybrid Nanomemristor/Transistor Logic Circuit Capable of Self-Programming by Borghetti, Julien, Li, Zhiyong, Straznicky, Joseph, Li, Xuema, Ohlberg, Douglas A. A., Wu, Wei, Stewart, Duncan R., Williams, R. Stanley, Likharev, Konstantin

“…Memristor crossbars were fabricated at 40 nm half-pitch, using nanoimprint lithography on the same substrate with Si metaloxide-semiconductor field effect…”
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Study of SERS Chemical Enhancement Factors Using Buffer Layer Assisted Growth of Metal Nanoparticles on Self-Assembled Monolayers by Maitani, Masato M, Ohlberg, Douglas A. A, Li, Zhiyong, Allara, David L, Stewart, Duncan R, Williams, R. Stanley

“…Highly controlled morphology Au nanoparticle films can be formed on the surfaces of self-assembled monolayers (SAMs) by vapor deposition at cryogenic…”
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Metal/TiO2 interfaces for memristive switches by Yang, J. Joshua, Strachan, John Paul, Miao, Feng, Zhang, Min-Xian, Pickett, Matthew D., Yi, Wei, Ohlberg, Douglas A. A., Medeiros-Ribeiro, G., Williams, R. Stanley

“…The interfaces between metal electrodes and the oxide in TiO 2 -based memristive switches play a key role in the switching as well as in the I – V…”
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Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to Domes by Medeiros-Ribeiro, Gilberto, Bratkovski, Alexander M., Kamins, Theodore I., Douglas A. A. Ohlberg, Williams, R. Stanley

“…Chemical vapor deposition of germanium onto the silicon (001) surface at atmospheric pressure and 600 degrees Celsius has previously been shown to produce…”
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Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches by Yang, J. Joshua, Kobayashi, Nobuhiko P, Strachan, John Paul, Zhang, M.-X, Ohlberg, Douglas A. A, Pickett, Matthew D, Li, Zhiyong, Medeiros-Ribeiro, Gilberto, Williams, R. Stanley

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Twisted Bilayer Graphene: A Versatile Fabrication Method and the Detection of Variable Nanometric Strain Caused by Twist-Angle Disorder by Gadelha, Andreij C, Ohlberg, Douglas A. A, Santana, Fabiano C, Eliel, Gomes S. N, Lemos, Jessica S, Ornelas, Vinícius, Miranda, Daniel, Nadas, Rafael Battistella, Watanabe, Kenji, Taniguchi, Takashi, Rabelo, Cassiano, Venezuela, Pedro Paulo de Mello, Medeiros-Ribeiro, Gilberto, Jorio, Ado, Cançado, Luiz Gustavo, Campos, Leonardo C

“…Twisted bilayer heterostructures (TBHs) are materials whose physical properties depend on the twist angle between the two layers of two-dimensional (2D)…”
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Oxide and Carbide Formation at Titanium/Organic Monolayer Interfaces by Blackstock, Jason J, Donley, Carrie L, Stickle, William F, Ohlberg, Douglas A. A, Yang, J. Joshua, Stewart, Duncan R, Williams, R. Stanley

“…X-ray photoelectron spectra (XPS) are reported from a series of buried titanium/organic monolayer interfaces accessed through sample delamination in ultrahigh…”
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Self-Assembled Monolayers on Pt(111):  Molecular Packing Structure and Strain Effects Observed by Scanning Tunneling Microscopy by Lee, Sangyeob, Park, Jung, Ragan, Regina, Kim, Sehun, Lee, Zonghoon, Lim, Do Kyung, Ohlberg, Douglas A. A, Williams, R. Stanley

“…Self-assembled monolayers (SAMs) of octanethiol and benzeneethanethiol were deposited on clean Pt(111) surfaces in ultrahigh vacuum (UHV). Highly resolved…”
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Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching by Yang, J. Joshua, Strachan, John Paul, Xia, Qiangfei, Ohlberg, Douglas A. A., Kuekes, Philip J., Kelley, Ronald D., Stickle, William F., Stewart, Duncan R., Medeiros-Ribeiro, Gilberto, Williams, R. Stanley

“…Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling…”
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Nitride memristors by Choi, Byung Joon, Yang, J. Joshua, Zhang, M.-X., Norris, Kate J., Ohlberg, Douglas A. A., Kobayashi, Nobuhiko P., Medeiros-Ribeiro, Gilberto, Williams, R. Stanley

“…We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic…”
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Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy by Miao, Feng, Ohlberg, Douglas A. A., Stanley Williams, R., Lau, Chun Ning

“…Nanoscale switches will play a crucial role in the design of future nanoelectronic circuits. An interesting candidate involves metal/molecule/metal structures…”
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Nanoscale molecular-switch devices fabricated by imprint lithography by Chen, Yong, Ohlberg, Douglas A. A., Li, Xuema, Stewart, Duncan R., Stanley Williams, R., Jeppesen, Jan O., Nielsen, Kent A., Stoddart, J. Fraser, Olynick, Deirdre L., Anderson, Erik

“…Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were…”
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Fabrication of a 34 × 34 Crossbar Structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography by Jung, G. Y, Ganapathiappan, S, Ohlberg, Douglas A. A, Olynick, Deirdre L, Chen, Y, Tong, William M, Williams, R. Stanley

“…We have developed a single-layer UV-nanoimprint process, which was utilized to fabricate 34 × 34 crossbar circuits with a half-pitch of 50 nm (equivalent to a…”
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Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) by Chen, Yong, Ohlberg, Douglas A. A., Medeiros-Ribeiro, Gilberto, Chang, Y. Austin, Williams, R. Stanley

“…By choosing a material that has an appropriate asymmetric lattice mismatch to the host substrate, in this case ErSi2 on Si(001), it is possible to grow…”
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