Search Results - "Ohkura, Makoto"

A Model for Predicting On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Polysilicon Thin-Film Transistors by Kawamura, T., Matsumura, M., Kaitoh, T., Noda, T., Hatano, M., Miyazawa, T., Ohkura, M.

“…A model for predicting on-current degradation caused by drain-avalanche hot carriers in NMOS low-temperature polysilicon thin-film transistors (TFTs) is…”
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P-9: Unified Model and Prediction Technique for On-Current Degradation Caused by Drain-Avalanche Hot Carriers in Low-Temperature Poly-Silicon Thin-Film Transistors by Kawamura, Tetsufumi, Matsumura, Mieko, Hatano, Mutsuko, Kaitoh, Takuo, Noda, Takeshi, Miyazawa, Toshio, Ohkura, Makoto

“…A unified model and a prediction technique for on‐current degradation in NMOS low‐temperature poly‐Silicon thin‐film transistors are presented. The resistance…”
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34.5L: Late-News Paper: Low Cost Retarder-less Transflective IPS-LCD by Ochiai, Takahiro, Sasaki, Tohru, Miyazawa, Toshio, Maki, Masahiro, Morimoto, Masateru, Ohkura, Makoto

“…A transflective IPS‐LCD without retardation films, which degrade transmissive contrast, is developed. This is realized by altering the voltage applied to the…”
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Controlling the solid-phase nucleation of amorphous Si by means of a substrate step structure and local phosphorus doping by MONIWA, M, KUSUKAWA, K, OHKURA, M, TAKEDA, E

“…We propose a solid-phase crystallization technique that controls the location of crystal grain formation on SiO 2 substrates. This enables the formation of…”
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Degradation of n+/p junction characteristics by aluminum contamination by ITOGA, T, KOJIMA, H, HIRAIWA, A, OHKURA, M

“…This paper discusses the effects of Al contamination on n + /p junction characteristics. The Al contamination occurs during ion implantation and the level can…”
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21.3: An Improved Dynamic Ratio Less Shift Register Circuit Suitable for LTPS-TFT LCD Panels by Miyazawa, Toshio, Goto, Kazutaka, Hasegawa, Atsushi, Maki, Masahiro, Sato, Hideo, Nagata, Tetsuya, Ohkura, Makoto, Mamba, Norio

“…We have improved the dynamic ratio less shift register circuit, originally designed for use in Si‐LSIs, so as to be applied to LTPS TFTs on the glass substrate…”
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12.4: Late-News Paper: Selectively Enlarging Laser Crystallization Technology for High and Uniform Performance Poly-Si TFTs by Hatano, Mutsuko, Shiba, Takeo, Ohkura, Makoto

“…A novel method for laser‐recrystallized poly‐Si layer formation is proposed. The pulse‐duration‐controlled solid‐state laser is utilized to enhance the lateral…”
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The increase of the native oxide thickness on H-terminated Si surfaces by gaseous contamination in a clean room atmosphere by ITOGA, T, KOJIMA, H, YUGAMI, J, OHKURA, M

“…Gaseous impurities in a clean room (CR) atmosphere cause an increase in the native oxide thickness on H-terminated Si surfaces. The increase effect of ammonia…”
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12.1: 45°C Low-Temperature Poly-Si TFT Fabrication Process Applicable to the Display Manufacturing Using 730×920mm2 Glass Substrates by Ohkura, Makoto, Shimomura, Shigeo, Miyazawa, Toshio, Itoga, Toshihiko, Shiba, Takeo

“…450°C low temperature poly‐Si TFT fabrication process is developed. The process without substrate compaction enables us to use non‐preannealed glass substrate…”
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Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths: Principle, Limitation and Applications of Optical Shallow Defect Analyzer by Takeda, Kazuo, Isomae, Seiichi, Maeshima, MakotoOhkura, ShigeruMatsui, ShigeruMatsui

“…To inspect the quality of the silicon wafer surface region where devices are to be fabricated, an instrument termed optical shallow defect analyzer (OSDA) was…”
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Picosecond time-resolved spectroscopy of the photoluminescence intensity and its dynamical linear polarization of porous Si by 2.86 eV pulse excitation by AKIYAMA, N, ISHII, K, OHKURA, M, KURE, T, OHKURA, H

“…The time-delayed and time-resolved photoluminescence (PL) intensity, and its degree of linear polarization P of porous Si (PS) reflecting a quantum structure…”
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New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers by Itoga, Toshihiko, Hozawa, Kazuyuki, Takeda, Kazuo, Isomae, Seiichi, Ohkura, Makoto

“…Using a newly developed method to evaluate the gettering efficiency of Si wafers, we found that C-ion implantation prior to epitaxial growth greatly improves…”
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Degradation Characteristics of n- and p-Channel Polycrystalline-Silicon TFTs Under CMOS Inverter Operation by Toyota, Y., Matsumura, M., Hatano, M., Shiba, T., Ohkura, M.

“…The degradation characteristics of n- and p-channel polysilicon thin-film transistors (TFTs) under circuit operation were investigated by using CMOS inverter…”
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High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure by Toyota, Yoshiaki, Matsumura, Mieko, Suzumura, Isao, Kaitoh, Takuo, Gotoh, Jun, Ohkura, Makoto

“…The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate…”
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A new model for device degradation in low-temperature N-channel polycrystalline silicon TFTs under AC stress by Toyota, Y., Shiba, T., Ohkura, M.

“…Enhanced device degradation of low-temperature n-channel polycrystalline thin-film transistors (poly-silicon TFTs) under exposure to ac stress has been…”
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Performance of poly-Si TFTs fabricated by SELAX by Tai, M., Hatano, M., Yamaguchi, S., Noda, T., Seong-Kee Park, Shiba, T., Ohkura, M.

“…Selectively enlarging laser crystallization (SELAX) has been proposed as a new crystallization process for use in the fabrication of thin-film transistors…”
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Effects of the timing of AC stress on device degradation produced by trap states in low-temperature polycrystalline-silicon TFTs by Toyota, Y., Shiba, T., Ohkura, M.

“…Device degradation under ac stress in low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs) is analyzed with the density of trap states,…”
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Temperature Dependence of Performance and Hot-Carrier Immunity in Low-Temperature Polycrystalline Silicon Thin-Film Transistors by Matsumura, Mieko, Toyota, Yoshiaki, Hatano, Mutsuko, Ohkura, Makoto

“…The temperature dependence of the performance and hot-carrier instability of excimer-laser-crystallized low-temperature polycrystalline silicon thin-film…”
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62.1: Invited Paper: Fluorinated Compounds Emission Reduction Activity of WLICC (World LCD Industry Cooperation Committee) by Ohkura, Makoto, Luo, Fan, Lee, Eui-Guen, Matsumura, Kunio, Niu, Frank, Seong, Seok-Hyun

“…In 2003, WLICC agreed to voluntarily reduce FCs emission to 0.82MMTCE by 2010. To achieve the target, improvement of abatement efficiency, development of…”
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Subthreshold properties of TFTs with laser-crystallized laterally grown polysilicon layers by Matsumura, M., Hatano, M., Kaitoh, T., Ohkura, M.

“…Trap-density analysis of laterally grown polysilicon films formed by continuous-wave laser revealed the main factor that controls the subthreshold property of…”
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