Search Results - "Ohdaira, K."

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  1. 1

    Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition by Ohdaira, K., Fujiwara, T., Endo, Y., Nishioka, K., Matsumura, H.

    Published in Journal of crystal growth (15-01-2009)
    “…We investigate the microstructures of polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-μm-thick precursor a-Si films…”
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    Journal Article Conference Proceeding
  2. 2

    Characterization of Cu doped CdSe thin films grown by vacuum evaporation by Ramaiah, K.Subba, Su, Y.K., Chang, S.J., Juang, F.S., Ohdaira, K., Shiraki, Y., Liu, H.P., Chen, I.G., Bhatnagar, A.K.

    Published in Journal of crystal growth (01-04-2001)
    “…Cu doped CdSe thin films have been successfully grown by vacuum evaporation technique at various substrate temperatures. XRD analysis revealed that the films…”
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    Journal Article
  3. 3

    Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions by Ohdaira, K, Murata, H, Koh, S, Baba, M, Akiyama, H, Ito, R, Shiraki, Y

    “…Type-I and type-II band alignments were successfully controlled by changing composition and growth temperature in AlInAs/AlGaAs self-assembled quantum dots…”
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    Journal Article
  4. 4

    Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures by Ohdaira, K., Usami, N., Ota, K., Shiraki, Y.

    “…Existence of negatively charged excitons in quantum dots (QDs) is confirmed by the measurement of the bias dependence of luminescence from modulation doped…”
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    Journal Article
  5. 5

    Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure by Ono, K, Uchida, K, Miura, N, Hirayama, Y, Ohdaira, K, Shiraki, Y

    “…We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We…”
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    Journal Article
  6. 6

    Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods by Nishizaki, Shogo, Ohdaira, Keisuke, Matsumura, Hideki

    Published in Thin solid films (30-04-2009)
    “…We investigate the characteristics of amorphous silicon thin film transistors (a-Si TFTs) fabricated by plasma-enhanced chemical vapor deposition (PECVD) and…”
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    Journal Article Conference Proceeding
  7. 7

    New application of Cat-CVD technology and recent status of industrial implementation by Matsumura, Hideki, Ohdaira, Keisuke

    Published in Thin solid films (30-04-2009)
    “…Recent progress in application of Cat-CVD (Hot Wire CVD) technology is overviewed, along with recent status of industrial implementation of this technology…”
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    Journal Article Conference Proceeding
  8. 8

    A novel patterning technique using super-hydrophobic PTFE thin films by Cat-CVD method by Takachi, Michihisa, Yasuoka, Hiroaki, Ohdaira, Keisuke, Shimoda, Tatsuya, Matsumura, Hideki

    Published in Thin solid films (30-04-2009)
    “…Super-hydrophobic poly-tetrafluoroethylene (PTFE) films, with a water contact angle of over 160°, are formed by catalytic chemical vapor deposition (Cat-CVD)…”
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    Journal Article Conference Proceeding
  9. 9

    Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing by Ohdaira, Keisuke, Shiba, Kazuhiro, Takemoto, Hiroyuki, Fujiwara, Tomoko, Endo, Yohei, Nishizaki, Shogo, Jang, Young Rae, Matsumura, Hideki

    Published in Thin solid films (30-04-2009)
    “…Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0 µm-thick a-Si films deposited…”
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    Journal Article Conference Proceeding
  10. 10

    Formation of polycrystalline silicon films with μm-order-long grains through liquid-phase explosive crystallization by flash lamp annealing by Ohdaira, K., Varlamov, S., Usami, N., Matsumura, H.

    “…Flash lamp annealing (FLA) is a short-time annealing technique which can heat and crystallize μm-order-thick amorphous silicon (a-Si) films without inducing…”
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    Conference Proceeding
  11. 11

    Solar cell system using a polished concave Si-crystal mirror by Nakajima, Kazuo, Ohdaira, Keisuke, Fujiwara, Kozo, Pan, Wugen

    Published in Solar energy materials and solar cells (15-08-2005)
    “…We demonstrated a solar cell system comprising a concave-Si-mirror solar cell and a conventional small Si solar cell set at the focal point of the…”
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    Journal Article
  12. 12

    Carrier recombination mechanisms in solar cells fabricated using flash-lamp-crystallized polycrystalline silicon films by Ohdaira, K., Ishii, S., Tomura, N., Matsumura, H.

    “…Flash lamp annealing (FLA), millisecond-order discharge from a Xe lamp array, can form a few μm-thick polycrystalline silicon (poly-Si) films on low-cost glass…”
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    Conference Proceeding
  13. 13

    Surface treatment of crystalline silicon realizing extremely low surface recombination velocity using catalytically generated radicals by Ohdaira, K, Miyamoto, M, Koyama, K, Matsumura, H

    “…The surface recombination velocities (SRVs) of minority carriers on crystalline silicon (c-Si) surfaces are remarkably reduced by applying radical treatment at…”
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    Conference Proceeding
  14. 14

    Influence of stacked Ge islands on the dark current–voltage characteristics and the conversion efficiency of the solar cells by Alguno, Arnold, Usami, Noritaka, Ohdaira, Keisuke, Pan, Wugen, Tayanagi, Misumi, Nakajima, Kazuo

    Published in Thin solid films (05-06-2006)
    “…The dark current–voltage ( J– V) characteristics and the conversion efficiency of the solar cells with embedded stacked Ge islands in the intrinsic layer were…”
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    Journal Article Conference Proceeding
  15. 15

    Improved performance of thin-film solar cells using surface-morphology-controlled poly-Si films crystallized by flash lamp annealing by Ohdaira, K., Takemoto, H., Shiba, K., Nishikawa, T., Koyama, K., Matsumura, H.

    “…We improve the performance of thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous…”
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    Conference Proceeding
  16. 16
  17. 17

    Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment by Ohdaira, Keisuke, Ono, Kazuo, Uchida, Kazuhito, Koh, Shinji, Miura, Noboru, Shiraki, Yasuhiro

    Published in Journal of the Physical Society of Japan (01-02-2004)
    “…Magnetic-field dependence of the photoluminescence (PL) characteristic of type-II quantum dots (QDs) was observed in AlInAs/AlGaAs self-assembled QDs…”
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    Journal Article
  18. 18

    Observation of band alignment transition from type-I to type-II in AlInAs/AlGaAs self-assembled quantum dots by OHDAIRA, Keisuke, MURATA, Hiroshi, KOH, Shinji, BABA, Motoyoshi, AKIYAMA, Hidefumi, ITO, Ryoichi, SHIRAKI, Yasuhiro

    Published in Journal of the Physical Society of Japan (01-12-2003)
    “…We found that the AlInAs/AlGaAs self-assembled quantum dots (QDs) systematically changed from type-I to type-II band alignment in real and momentum space with…”
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    Journal Article
  19. 19

    Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe by Ohdaira, Keisuke, Usami, Noritaka, Pan, Wugen, Fujiwara, Kozo, Nakajima, Kazuo

    Published in Japanese Journal of Applied Physics (01-11-2005)
    “…We analyzed the dark-current density obtained from solar cells based on multicrystalline SiGe (mc-SiGe) using a modified two-diode model that includes two…”
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    Journal Article
  20. 20

    Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration by Usami, Noritaka, Kitamura, Masayuki, Sugawara, Takamasa, Kutsukake, Kentaro, Ohdaira, Keisuke, Nose, Yoshitaro, Fujiwara, Kozo, Shishido, Toetsu, Nakajima, Kazuo

    Published in Japanese Journal of Applied Physics (01-01-2005)
    “…We attempted to grow Si bicrystals with a controlled grain boundary configuration using a pair of single-crystal seeds, which was purposely designed to have a…”
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    Journal Article