Search Results - "Ohdaira, K."
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Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition
Published in Journal of crystal growth (15-01-2009)“…We investigate the microstructures of polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-μm-thick precursor a-Si films…”
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Journal Article Conference Proceeding -
2
Characterization of Cu doped CdSe thin films grown by vacuum evaporation
Published in Journal of crystal growth (01-04-2001)“…Cu doped CdSe thin films have been successfully grown by vacuum evaporation technique at various substrate temperatures. XRD analysis revealed that the films…”
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Journal Article -
3
Control of type-I and type-II band alignments in AlInAs/AlGaAs self-assembled quantum dots by changing AlGaAs compositions
Published in Physica. E, Low-dimensional systems & nanostructures (01-03-2004)“…Type-I and type-II band alignments were successfully controlled by changing composition and growth temperature in AlInAs/AlGaAs self-assembled quantum dots…”
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4
Observation of negatively charged excitons and excited states of multi-excitons in quantum dots embedded in modulation doping structures
Published in Physica. E, Low-dimensional systems & nanostructures (01-10-2001)“…Existence of negatively charged excitons in quantum dots (QDs) is confirmed by the measurement of the bias dependence of luminescence from modulation doped…”
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Exciton recombination process in GaAs/AlAs type-II heterostructures in pulsed high magnetic fields and a uniaxial pressure
Published in Physica. E, Low-dimensional systems & nanostructures (01-03-2004)“…We measured magneto-photoluminescence (PL) spectra in type-II heterostructures of GaAs/AlAs in high magnetic fields up to 40 T under a uniaxial pressure. We…”
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6
Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods
Published in Thin solid films (30-04-2009)“…We investigate the characteristics of amorphous silicon thin film transistors (a-Si TFTs) fabricated by plasma-enhanced chemical vapor deposition (PECVD) and…”
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Journal Article Conference Proceeding -
7
New application of Cat-CVD technology and recent status of industrial implementation
Published in Thin solid films (30-04-2009)“…Recent progress in application of Cat-CVD (Hot Wire CVD) technology is overviewed, along with recent status of industrial implementation of this technology…”
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Journal Article Conference Proceeding -
8
A novel patterning technique using super-hydrophobic PTFE thin films by Cat-CVD method
Published in Thin solid films (30-04-2009)“…Super-hydrophobic poly-tetrafluoroethylene (PTFE) films, with a water contact angle of over 160°, are formed by catalytic chemical vapor deposition (Cat-CVD)…”
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9
Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing
Published in Thin solid films (30-04-2009)“…Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0 µm-thick a-Si films deposited…”
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Journal Article Conference Proceeding -
10
Formation of polycrystalline silicon films with μm-order-long grains through liquid-phase explosive crystallization by flash lamp annealing
Published in 2012 38th IEEE Photovoltaic Specialists Conference (01-06-2012)“…Flash lamp annealing (FLA) is a short-time annealing technique which can heat and crystallize μm-order-thick amorphous silicon (a-Si) films without inducing…”
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Conference Proceeding -
11
Solar cell system using a polished concave Si-crystal mirror
Published in Solar energy materials and solar cells (15-08-2005)“…We demonstrated a solar cell system comprising a concave-Si-mirror solar cell and a conventional small Si solar cell set at the focal point of the…”
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12
Carrier recombination mechanisms in solar cells fabricated using flash-lamp-crystallized polycrystalline silicon films
Published in 2011 37th IEEE Photovoltaic Specialists Conference (01-06-2011)“…Flash lamp annealing (FLA), millisecond-order discharge from a Xe lamp array, can form a few μm-thick polycrystalline silicon (poly-Si) films on low-cost glass…”
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Conference Proceeding -
13
Surface treatment of crystalline silicon realizing extremely low surface recombination velocity using catalytically generated radicals
Published in 2010 35th IEEE Photovoltaic Specialists Conference (01-06-2010)“…The surface recombination velocities (SRVs) of minority carriers on crystalline silicon (c-Si) surfaces are remarkably reduced by applying radical treatment at…”
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Conference Proceeding -
14
Influence of stacked Ge islands on the dark current–voltage characteristics and the conversion efficiency of the solar cells
Published in Thin solid films (05-06-2006)“…The dark current–voltage ( J– V) characteristics and the conversion efficiency of the solar cells with embedded stacked Ge islands in the intrinsic layer were…”
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Journal Article Conference Proceeding -
15
Improved performance of thin-film solar cells using surface-morphology-controlled poly-Si films crystallized by flash lamp annealing
Published in 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) (01-06-2009)“…We improve the performance of thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of precursor amorphous…”
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Conference Proceeding -
16
High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
Published in Japanese Journal of Applied Physics (01-03-2006)Get full text
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17
Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment
Published in Journal of the Physical Society of Japan (01-02-2004)“…Magnetic-field dependence of the photoluminescence (PL) characteristic of type-II quantum dots (QDs) was observed in AlInAs/AlGaAs self-assembled QDs…”
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18
Observation of band alignment transition from type-I to type-II in AlInAs/AlGaAs self-assembled quantum dots
Published in Journal of the Physical Society of Japan (01-12-2003)“…We found that the AlInAs/AlGaAs self-assembled quantum dots (QDs) systematically changed from type-I to type-II band alignment in real and momentum space with…”
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19
Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
Published in Japanese Journal of Applied Physics (01-11-2005)“…We analyzed the dark-current density obtained from solar cells based on multicrystalline SiGe (mc-SiGe) using a modified two-diode model that includes two…”
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Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
Published in Japanese Journal of Applied Physics (01-01-2005)“…We attempted to grow Si bicrystals with a controlled grain boundary configuration using a pair of single-crystal seeds, which was purposely designed to have a…”
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