Search Results - "Oh, Hongjun"

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  1. 1

    Inherently Area‐Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide Versus Nitride Selectivity by Lee, Jinseon, Lee, Jeong‐Min, Oh, Hongjun, Kim, Changhan, Kim, Jiseong, Kim, Dae Hyun, Shong, Bonggeun, Park, Tae Joo, Kim, Woo‐Hee

    Published in Advanced functional materials (01-08-2021)
    “…Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in comparison with conventional top‐down patterning processes that atomic‐level…”
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    Journal Article
  2. 2

    Reaction mechanisms of α,ω-bifunctional molecules toward atomic layer deposition versus molecular layer deposition by Kim, Miso, Oh, Hongjun, Shong, Bonggeun

    Published in Materials chemistry and physics (01-05-2024)
    “…Atomic layer deposition (ALD) and molecular layer deposition (MLD) are key techniques used to fabricate high-quality thin films. Organic α,ω-bifunctional…”
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    Journal Article
  3. 3

    Area-selective atomic layer deposition of Ru thin films by chemo-selective inhibition of alkyl aldehyde molecules on nitride surfaces by Lee, Jinseon, Oh, Jieun, Kim, Jiwon, Oh, Hongjun, Shong, Bonggeun, Kim, Woo-Hee

    Published in Applied surface science (30-07-2024)
    “…[Display omitted] •Chemoselective adsorption of aldehydes on –NH2 functional groups is confirmed.•Chemisorption of aldehydes on –NH2 and –OH was investigated…”
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    Journal Article
  4. 4

    Inhibitor-free area-selective atomic layer deposition of SiO2 through chemoselective adsorption of an aminodisilane precursor on oxide versus nitride substrates by Lee, Jeong-Min, Lee, Jinseon, Oh, Hongjun, Kim, Jiseong, Shong, Bonggeun, Park, Tae Joo, Kim, Woo-Hee

    Published in Applied surface science (01-07-2022)
    “…[Display omitted] •A method to achieve highly selective AS-ALD of SiO2 films up to 5 nm was reported.•Chemoselective adsorption of BDIPADS resulted in an…”
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    Journal Article
  5. 5

    Low-temperature growth of crystalline Tin(II) monosulfide thin films by atomic layer deposition using a liquid divalent tin precursor by Ansari, Mohd Zahid, Janicek, Petr, Nandi, Dip K., Slang, Stanislav, Bouska, Marek, Oh, Hongjun, Shong, Bonggeun, Kim, Soo-Hyun

    Published in Applied surface science (01-11-2021)
    “…[Display omitted] •A detailed study on a new ALD process of SnS using a novel liquid divalent tin precursor.•The precursor shows better ALD growth kinetics to…”
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    Journal Article
  6. 6

    Inherently Area‐Selective Atomic Layer Deposition of SiO 2 Thin Films to Confer Oxide Versus Nitride Selectivity by Lee, Jinseon, Lee, Jeong‐Min, Oh, Hongjun, Kim, Changhan, Kim, Jiseong, Kim, Dae Hyun, Shong, Bonggeun, Park, Tae Joo, Kim, Woo‐Hee

    Published in Advanced functional materials (01-08-2021)
    “…Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in comparison with conventional top‐down patterning processes that atomic‐level…”
    Get full text
    Journal Article