Search Results - "Ogiue, K."

Perspective on BiCMOS VLSIs by Kubo, M., Masuda, I., Miyata, K., Ogiue, K.

“…A high-performance BiCMOS technology (Hi-BiCMOS) and its applications to VLSIs are described. By combining bipolar and CMOS devices in unit circuits of VLSIs,…”
Get full text

An experimental soft-error-immune 64-kbit 3-ns ECL bipolar RAM by Yamaguchi, K., Nanbu, H., Kanetani, K., Homma, N., Nakamura, T., Ohhata, K., Uchida, A., Ogiue, K.

“…An experimental soft-error-immune 64-kbit 3-ns ECL RAM has been developed. This high performance is achieved by using a soft-error-immune…”
Get full text

An 8 ns 256 K BiCMOS RAM by Tamba, N., Miyaoka, S., Odaka, M., Ogiue, K., Yamada, K., Ikeda, T., Hirao, M., Higuchi, H., Uchida, H.

“…A 256 K word*1 bit emitter-coupled logic (ECL) RAM, which achieves an 8 ns address access time, less than 400 mW power consumption at 50 MHz operation, and 150…”
Get full text

High-speed BiCMOS technology with a buried twin well structure by Ikeda, T., Watanabe, A., Nishio, Y., Masuda, I., Tamba, N., Odaka, M., Ogiue, K.

“…A buried twin well and polysilicon emitter structure is developed for high-speed BiCMOS VLSI's. A bipolar transistor of high cutoff frequency (f T = 4 GHz) and…”
Get full text

Complex Space Forms Immersed in Complex Space Forms by Nakagawa, H., Ogiue, K.

“…We determine all the isometric immersions of complex space forms into complex space forms. Our results can be considered as the local version of a well-known…”
Get full text

A 7-ns/350-mW 64-kbit ECL-compatible RAM by Miyaoka, S., Odaka, M., Ogiue, K., Ikeda, T., Suzuki, M., Higuchi, H., Hirao, M.

“…A 7-ns 350-mW, 64-kbit ECL RAM was developed using 1.3-/spl mu/m high-performance bipolar-CMOS (Hi-BiCMOS) technology, in which a bipolar transistor of 7-GHz…”
Get full text

Ultra-thin Ta2O5dielectric film for high-speed bipolar memories by Nishioka, Y., Homma, N., Shinriki, H., Mukai, K., Yamaguchi, K., Uchida, A., Higeta, K., Ogiue, K.

“…A new capacitor technology, with extremely thin (5.3-20 nm) Ta 2 O 5 film deposition and weak-spot oxidation, is developed to realize high capacitance and high…”
Get full text

Isotropic Immersions and Veronese Manifolds by Itoh, T., Ogiue, K.

“…An n-dimensional Veronese manifold is defined as a minimal immersion of an n-sphere of curvature n/2(n + 1) into an {n(n + 2)/2 - 1}-dimensional unit sphere…”
Get full text

A 16K-Bit Static IIL RAM with 25-ns Access Time by Inabe, Y., Hayashi, T., Kawarada, K., Miwa, H., Ogiue, K.

“…A 16 384 X 1-bit RAM with 25-ns access time, 600 -mW power dissipation, and 33-mm/sup 2/ chip size has been developed. Excellent speed-power performance with…”
Get full text

A 16K-bit static IIL RAM with 25-ns access time by Inabe, Y., Hayashi, T., Kawarada, K., Miwa, H., Ogiue, K.

“…A 16 384 × 1-bit RAM with 25-ns access time, 600-mW power dissipation, and 33-mm 2 chip size has been developed. Excellent speed-power performance with high…”
Get full text

13-ns, 500-mW, 64-kbit ECL RAM using Hi-BiCMOS technology by Ogiue, K., Odaka, M., Miyaoka, S., Masuda, I., Ikeda, T., Tonomura, K.

“…The development is discussed for a 13-ns, 500-mW, 16K word/spl times/4-bit emitter-coupled logic (ECL) RAM using high-performance bipolar CMOS (Hi-BiCMOS)…”
Get full text

A pair of bipolar memory LSI chips for mainframe computers by Hotta, A., Ogiue, K., Mitsusada, K., Yamaguchi, K., Inadchi, M., Hinai, M.

“…A pair of bipolar memory chips has been developed. One is an LSI consisting of a 3072 bit RAM and 470 logic gates on the same chip. It has a typical address…”
Get full text

A 3.5-ns, 2-W, 20-mm/SUP 2/, 16-kbit ECL bipolar RAM by Homma, N., Yamaguchi, K., Nanbu, H., Kanetani, K., Nishioka, Y., Uchida, A., Ogiue, K.

“…A 3.5-ns emitter-coupled logic (ECL) 16-kbit bipolar RAM with a power dissipation of 2 W, a cell size of 495 /spl mu/m/SUP 2/, and a chip size of 20 mm/SUP 2/…”
Get full text

Characterizations of geodesic hyperspheres in a complex projective space by observing the extrinsic shape of geodesics by Maeda, Sadahiro, Ogiue, Koichi

Get full text

Ultra-thin Ta2O5 dielectric film for high-speed bipolar memories by NISHIOKA, Y, HOMMA, N, SHINRIKI, H, MUKAI, K, YAMAGUCHI, K, UCHIDA, A, HIGETA, K, OGIUE, K

Get full text

Extrinsic shape of circles and standard imbeddings of projective spaces by Adachi, Toshiaki, Maeda, Sadahiro, Ogiue, Koichi

Get full text

Ultra-thin Ta 2 O 5 dielectric film for high-speed bipolar memories by Nishioka, Y., Homma, N., Shinriki, H., Mukai, K., Yamaguchi, K., Uchida, A., Higeta, K., Ogiue, K.

Get full text

Ultra-thin Ta sub(2)O sub(5) dielectric film for high-speed bipolar memories by Nishioka, Y, Homma, N, Shinriki, H, Mukai, K, Yamaguchi, K, Uchida, A, Higeta, K, Ogiue, K

“…A new capacitor technology, with extremely thin (5.3-20 nm) Ta sub(2)O sub(5)film deposition and weak-spot oxidation, is developed to realize high capacitance…”
Get full text

A 3.5-ns, 2-W, 20-mm2, 16-kbit ECL bipolar RAM by HOMMA, N, YAMAGUCHI, K, NANBU, H, KANETANI, K, NISHIOKA, Y, UCHIDA, A, OGIUE, K

Get full text

A SUBMANIFOLD WHICH CONTAINS MANY EXTRINSIC CIRCLES by Ogiue, Koichi, Takagi, Ryoichi

Get full text