Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection
We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 ± 5 meV. However, SL quality is sensitive to the growth temperature (...
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Published in: | Applied physics letters Vol. 101; no. 17 |
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Main Authors: | , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
22-10-2012
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Subjects: | |
Online Access: | Get full text |
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Summary: | We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 ± 5 meV. However, SL quality is sensitive to the growth temperature (Tg). For the SLs grown at 390−470 °C, a photoresponse signal gradually increases as Tg increases from 400 to 440 °C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of ∼10 000 V/cm2 and 300 K recombination lifetime of ∼70 ns for an optimized SL. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4764015 |