Impact of growth temperature on InAs/GaInSb strained layer superlattices for very long wavelength infrared detection

We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 ± 5 meV. However, SL quality is sensitive to the growth temperature (...

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Published in:Applied physics letters Vol. 101; no. 17
Main Authors: Haugan, H. J., Brown, G. J., Elhamri, S., Mitchel, W. C., Mahalingam, K., Kim, M., Noe, G. T., Ogden, N. E., Kono, J.
Format: Journal Article
Language:English
Published: 22-10-2012
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Summary:We explore the optimum growth space for a 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb superlattices (SLs) designed for the maximum Auger suppression for a very long wavelength infrared gap. Our growth process produces a consistent gap of 50 ± 5 meV. However, SL quality is sensitive to the growth temperature (Tg). For the SLs grown at 390−470 °C, a photoresponse signal gradually increases as Tg increases from 400 to 440 °C. Outside this temperature window, the SL quality deteriorates very rapidly. All SLs were n-type with mobility of ∼10 000 V/cm2 and 300 K recombination lifetime of ∼70 ns for an optimized SL.
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4764015