Search Results - "Oganesyan, G A"

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory by Emtsev, V. V., Oganesyan, G. A.

“…Electrical measurements on heavily doped n -type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n…”
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Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method by Lebedev, A. A., Davydov, V. Yu, Eliseev, I. A., Lebedev, S. P., Nikitina, I. P., Oganesyan, G. A., Smirnov, A. N., Shakhov, L. V.

“…Heavily doped 3 C -SiC films based on semi-insulating 6 H -SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained…”
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Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures by Lebedev, A. A., Kozlovskii, V. V., Levinshtein, M. E., Malevskii, D. A., Oganesyan, G. A.

“…The effect of proton irradiation (proton energy 15 MeV) on the parameters of high-voltage 4H-SiC integrated Schottky diodes (JBS) was studied for the first…”
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Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature by Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Oganesyan, G. A., Strel’chuk, A. M., Davydovskaya, K. S.

“…The effect of annealing on the parameters of 4 H -SiC Schottky diodes irradiated with electrons at a high temperature is studied for the first time. The…”
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“Nucleation” Cracks on the Surface of a Silicon Crystal by Vettegren’, V. I., Kadomtsev, A. G., Shcherbakov, I. P., Mamalimov, R. I., Oganesyan, G. A.

“…The (100) surface of a silicon crystal after cutting a blank with a diamond disk and subsequent polishing is studied by white light interference profilometry…”
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Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies by Emtsev, V. V., Abrosimov, N. V., Kozlovski, V. V., Oganesyan, G. A., Poloskin, D. S.

“…Annealing processes of vacancy-impurity atom pairs in moderately doped n -type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron…”
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Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge by Emtsev, V. V., Abrosimov, N. V., Kozlovski, V. V., Poloskin, D. S., Oganesyan, G. A.

“…A comparative study of interactions of shallow impurities with primary defects in oxygen- and carbon-lean moderately doped Si and Ge subjected to irradiation…”
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Formation and annealing of vacancy-P complexes in proton-irradiated germanium by Elsayed, M., Arutyunov, N.Yu, Krause-Rehberg, R., Oganesyan, G.A., Kozlovski, V.V.

“…[Display omitted] We have used positron annihilation spectroscopy to study the formation and annealing of defects in germanium irradiated with 15MeV protons…”
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Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles by Kozlovski, V. V., Vasil’ev, A. E., Emtsev, V. V., Oganesyan, G. A., Lebedev, A. A.

“…The kinetics of the formation of radiation-induced defects in silicon and silicon carbide as a function of the absorbed energy is analyzed. The dependence of…”
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Monovacancy–As complexes in proton-irradiated Ge studied by positron lifetime spectroscopy by Elsayed, M., Yu. Arutyunov, N., Krause-Rehberg, R., Emtsev, V.V., Oganesyan, G.A., Kozlovski, V.V.

“…We applied positron annihilation lifetime spectroscopy to study the proton-irradiation-induced defects in germanium and its annealing behavior. The n-doped Ge…”
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Positron annihilation on defects in silicon irradiated with 15 MeV protons by Arutyunov, N Y, Elsayed, M, Krause-Rehberg, R, Emtsev, V V, Oganesyan, G A, Kozlovski, V V

“…Microstructure and thermal stability of the radiation defects in n-FZ-Si ([P] ≈ 7 × 10(15) cm(-3)) single crystals have been investigated. The radiation…”
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Radiation Defects in Heterostructures 3C-SiC/4H-SiC by Lebedev, A.A., Oganesyan, G.A., Kozlovski, V.V., Eliseyev, I.A., Bulat, P.V.

“…The effect of 8 MeV proton irradiation on n-3C-SiC epitaxial layers grown by sublimation on semi-insulating 4H-SiC substrates has been studied. Changes in…”
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Methods of nonlinear dynamics in estimation of electroencephalograms of healthy people and of patients with epilepsy by Kambarova, D. K, Belyaev, V. V, Volkova, A. V, Oganesyan, S. G, El Salim, V. Z, Oganesyan, G. A

“…A possibility is discussed of use of methods of nonlinear dynamics for analysis of spontaneous EEG and of the EEG caused by low acoustic stimuli in healthy…”
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Radiation-produced defects in germanium: Experimental data and models of defects by Emtsev, V. V., Kozlovski, V. V., Poloskin, D. S., Oganesyan, G. A.

“…The problem of radiation-produced defects in n -Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall…”
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Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons by Emtsev, V. V., Abrosimov, N. V., Kozlovskii, V. V., Oganesyan, G. A., Poloskin, D. S.

“…Electrical properties of defects formed in n -Si(FZ) following 8 and 15 MeV proton irradiation are investigated by Hall effect measurements over the wide…”
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Effects of Stimulation of the Inferior Colliculi in Krushinskii–Molodkina Rats by Vataev, S. I., Mal’gina, N. A., Oganesyan, G. A.

“…The effects of chemical and electrical stimulation of the central nucleus of the inferior colliculus on the generation and formation of convulsive…”
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The effect of motion sickness on the sleep–wake cycle in rats exposed to prenatal hypoxia by Lychakov, D. V., Aristakesyan, E. A., Oganesyan, G. A.

“…This study is a follow-up to our previous research of the phenomenology and mechanisms of motion sickness (MS) and its relationship with changes in the…”
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Dissolution of the wakefulness-sleep cycle in patients with catatonic form of schizophrenia by Oganesyan, G. A, Kambarova, D. K, Dobek, V. A, Titkov, E. S, Zhernovaya, N. N, Oganesyan, S. G

“…Polysomnograms of two patients with catatonic form of schizophrenia of different duration of the disease were recorded and analyzed. Pronounced disturbances of…”
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Effects of Electrical Stimulation of the Oral Reticular Nucleus of the Pons on the Background of Different States in the Sleep–Waking Cycle in Krushinskii–Molodkina Rats by Vataev, S. I., Mal’gina, N. A., Oganesyan, G. A.

“…The effects of electrical stimulation of the oral reticular nucleus of the pons on behavior and brain activity in different states of the sleep–waking cycle…”
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Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures by Emtsev Jr, V. V., Ammerlaan, C. A. J., Emtsev, V. V., Oganesyan, G. A., Andreev, B. A., Kuritsyn, D. I., Misiuk, A., Surma, B., Londos, C. A.

“…The formation kinetics of Thermal Double Donors, a dominant family of thermal donors in Czochralski‐grown silicon annealed at T < 600 °C, is studied in detail…”
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