Search Results - "Odzhaev, V. B."

Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell by Kenzhaev, Z. T., Zikrillaev, N. F., Odzhaev, V. B., Ismailov, K. A., Prosolovich, V. S., Zikrillaev, Kh. F., Koveshnikov, S. V.

“…The research results present the influence of nickel impurities introduced by diffusion into monocrystalline silicon on the characteristics of solar cells…”
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Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes by Koval’chuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovsky, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of electrophysical parameters of pin- silicon-based photodiodes, depending on their operating modes (external bias and temperature),…”
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Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures by Odzhaev, V. B., Pyatlitski, A. N., Prosolovich, V. S., Kovalchuk, N. S., Soloviev, Ya. A., Zhygulin, D. V., Shestovsky, D. V., Yankovski, Yu. N., Brinkevich, D. I.

“…The behavior of nitrogen in silicon dioxide films on single-crystal silicon substrates was studied by attenuated total reflection (ATR) and time-of-flight…”
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Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta by Kovalchuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovskii, D. V., Yavid, V. Yu, Yankovskii, Yu. N.

“…The results of studies of the changes in the electrophysical parameters of PIN photodiodes made on monocrystalline silicon wafers of the p -type of…”
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EPR Spectroscopy of Diazoquinone–Novolac Resist Films Implanted with P+ and B+ Ions by Brinkevich, D. I., Brinkevich, S. D., Oleshkevich, A. N., Prosolovich, V. S., Odzhaev, V. B.

“…The nature of stable radicals in FP9120 positive photoresist films implanted with boron and phosphorus ions and deposited on the surface of single-crystal…”
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Effect of Process-Related Impurities on the Electrophysical Parameters of a MOS Transistor by Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Filipenya, V. A., Yavid, V. Yu, Yankovskii, Yu. N.

“…It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra…”
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Electronic Conductivity in a Р+-Ion Implanted Positive Photoresist by Oleshkevich, A. N., Lapchuk, N. M., Odzhaev, V. B., Karpovich, I. A., Prosolovich, V. S., Brinkevich, D. I., Brinkevich, S. D.

“…FP-9120 positive photoresist films 1.8 μm thick implanted with boron and phosphorus ions deposited onto the surface of KDB-10 single-crystal (111) silicon…”
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Reflection Spectra Modification of Diazoquinone-Novolak Photoresist Implanted with B and P Ions by Brinkevich, D. I., Kharchenko, A. A., Prosolovich, V. S., Odzhaev, V. B., Brinkevich, S. D., Yankovskii, Yu. N.

“…We investigate FP9120 positive photoresist films 1.8 μm thick that are spin-coated on the surface of KDB-10 (111) silicon wafers and implanted with В + and Р +…”
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Interaction between antimony atoms and micropores in silicon by Odzhaev, V. B., Petlitskii, A. N., Plebanovich, V. I., Sadovskii, P. K., Tarasik, M. I., Chelyadinskii, A. R.

“…The interaction between Sb atoms and micropores of a getter layer in silicon is studied. The getter layer was obtained via implantation of Sb + ions into…”
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Optical Properties of Polyamide Films Modified by Implantation of Cobalt Ions by Bazarov, V. V., Bumai, Y. A., Valeev, V. F., Golovchuk, V. I., Lukashevich, M. G., Nuzhdin, V. I., Odzhaev, V. B., Kharchenko, A. A., Khaibullin, R. I.

“…Reflection and transmission spectra in the range 200–1100 nm of thin (40 μm) polyamide films implanted with Co + ions of energy 40 keV at ion-current density 4…”
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Transmission and Reflection Spectra of Zinc Oxide Implanted with a High Dose of Cobalt Ions by Bumai, Yu. A., Valeev, V. F., Golovchuk, V. I., Gumarov, A. I., Lukashevich, M. G., Nuzhdin, V. I., Odzhaev, V. B., Kharchenko, A. A., Khaibullin, R. I.

“…Optical transmission and reflection spectra of monocrystalline zinc oxide (ZnO) plates implanted with 40 keV Co + ions to high doses of (0.5–1.5)·10 17 cm –2…”
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Radiation-induced modification of reflection spectra beyond the ion path region in polyimide films by Brinkevich, D. I., Kharchenko, A. A., Brinkevich, S. D., Lukashevich, M. G., Odzhaev, V. B., Valeev, V. F., Nuzhdin, V. I., Khaibullin, R. I.

“…Modification of the surface layers of polyimide films under γ-radiation and implantation with 30–100 keV Ni, Mn, Ag, Co, Fe and B ions in the dose range of 10…”
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Anomalous depth distribution of Fe and Co atoms in polyimide implanted to high fluence by Popok, V.N., Khaibullin, R.I., Bazarov, V.V., Valeev, V.F., Hnatowicz, V., Mackova, A., Odzhaev, V.B.

“…Polyimide foils were implanted with 40 keV Fe + and Co + ions to the fluences of 2.5×10 16–1.25×10 17 cm −2 at ion current densities of 4, 8 and 12 μA/cm 2…”
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QUALITY ANALYSIS OF THE GATE DIELECTRIC OF THE MOS-STRUCTURES BY CAPACITY-VOLTAGE CHARACTERISTICS by V. B. Odzhaev, A. N. Pyatlitski, V. S. Prosolovich, V. A. Filipenya, S. V. Shvedau, V. V. Chernyi, V. Yu. Yavid, Yu. N. Yankouski

“…There were investigated the capacity-voltage characteristics of the MOS transistors, fabricated by the similar process charts, with the identical applied…”
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Electrical properties of polyethylene modified by multistage ion implantation by Odzhaev, V.B, Jankovsky, O.N, Karpovich, I.A, Partyka, J, Węgierek, P

“…The radiation defect formation accompanied with the paramagnetic centre creation by multistage boron ion implantation into the polyamide-6 films was studied…”
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Modification of magnetic properties of polyethyleneterephthalate by iron ion implantation by Lukashevich, M.G., Batlle, X., Labarta, A., Popok, V.N., Zhikharev, V.A., Khaibullin, R.I., Odzhaev, V.B.

“…Fe+ ions (40keV) were implanted into polyethyleneterephthalate (PET) films with fluences of (0.25–1.5)×1017cm−2. Magnetic properties of the synthesised Fe:PET…”
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Synthesis of Silver Nanoparticles by the Ion Implantation Method and Investigation of their Optical Properties by Popok, V. N., Stepanov, A. L., Odzhaev, V. B.

“…We have investigated the process of metal nanoparticle (NP) synthesis in SiO sub(2) by implanting Ag sub(+) ions with an energy of 30 keV depending on the dose…”
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Magnetoresistive effect and impedance spectroscopy of Co-implanted polyimide by Popok, V. N., Lukashevich, M. G., Gorbachuk, N. I., Odzhaev, V. B., Khaibullin, R. I., Khaibullin, I. B.

“…Electronic properties and magnetoresistance of polyimide (PI) films implanted by 40 keV Co+ ions with high fluences at various ion current densities are…”
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Development of dislocation-free ion-doped silicon layers by Plebanovich, V. I., Belous, A. I., Chelyadinskiĭ, A. R., Odzhaev, V. B.

“…Possible suppression of the formation of residual extended defects in boron-implanted silicon is studied using a method that combines the effects of a…”
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Boron electrical activation in dual B+ + N+ and B+ + Ar+ ion-implanted silicon by ODZHAEV, V. B, POPOK, V. N, PROSOLOVICH, V. S, HNATOWICZ, V

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