Search Results - "Oates, A.S"

RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology by Qiang Li, Jinlong Zhang, Wei Li, Yuan, J.S., Yuan Chen, Oates, A.S.

“…A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD), and hot-carrier (HC) stress is presented in this paper. DC and…”
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Electromigration subjected to Joule heating under pulsed DC stress by Wu, W., Yuan, J.S., Kang, S.H., Oates, A.S.

“…This article reports an electromigration-lifetime model that incorporates the effect of Joule heating under pulsed DC condition. This median-time-to-failure…”
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Design optimization of stacked layer dielectrics for minimum gate leakage currents by Zhang, J, Yuan, J.S, Ma, Y, Oates, A.S

“…An effective model to evaluate the leakage currents for different stacked gates deep submicron MOS transistors is presented. For a given equivalent oxide…”
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Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors by Zhang, J.-L., Yuan, J.S., Ma, Y., Oates, A.S.

“…Effects of direct tunneling and surface roughness on the capacitance–voltage characteristics of ultra-thin gate deep submicron MOS transistors have been…”
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Editorial Golden Reviewer List by Oates, A.S.

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New Insight Into NBTI Transient Behavior Observed From Fast- G Measurements by Campbell, J.P., Cheung, K.P., Suehle, J.S., Oates, A.S.

“…Fast-I D V G measurements have become an important tool to examine MOSFET transient degradation. The threshold voltage ( V TH ) extracted from fast-I D V G…”
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Electromigration failure distributions of dual damascene Cu /low – k interconnects by Oates, A.S., Lee, S.C.

“…The reliability of dual damascene Cu/low – k interconnects is limited by electromigration – induced void formation at vias. In this paper we investigate via…”
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Analysis and modeling of critical current density effects on electromigration failure distributions of Cu dual-damascene vias by Oates, A.S., Lin, M.H.

“…We investigate electromigration void morphologies, associated resistance increases and failure distributions for down-stream electron flow of Cu dual damascene…”
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New Insight Into NBTI Transient Behavior Observed From Fast-[Formula Omitted] Measurements by Campbell, J.P, Cheung, K.P, Suehle, J.S, Oates, A.S

“…Fast-I@@dD@V@@dG@ measurements have become an important tool to examine MOSFET transient degradation. The threshold voltage (@@iV@ @@dTH@) extracted from…”
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A model for electromigration failure distributions of contacts and vias in advanced IC technologies by Oates, A.S.

“…Electromigration failure of contacts and vias in deep submicron IC technologies is the key concern for interconnect reliability. We present a physical model…”
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Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model by Lee, J.H., Wu, W.H., Islam, A.E., Alam, M.A., Oates, A.S.

“…In this study, we propose a systematic method to separate the hole trapping from measured V 1 shift, thus giving the ideal interface trap generation behavior…”
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Time Dependent Vccmin Degradation of SRAM Fabricated with High-k Gate Dielectrics by Lin, J.C., Oates, A.S., Yu, C.H.

“…The paper presents the results of simulations of voltage-induced V ccmin drift of SRAMs fabricated with high-k gate dielectrics. The authors show that high-k…”
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Void nucleation and growth contributions to the critical current density for failure of Cu vias by Oates, A.S., Lin, M.H.

“…We investigate the critical current density for electromigration failure, j c , as a function of voiding failure mode for Cu dual damascene vias. We…”
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Golden Reviewer List by Oates, A.S.

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T-DMR Editorial Board Changes by Oates, A.S.

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T-DMR Editorial Board Changes by Oates, A.S.

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T-DMR editorial board changes by Oates, A.S.

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Editorial golden reviewer list by Oates, A.S.

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A Comprehensive Model for Plasma Damage Enhanced Transistor Reliability Degradation by Weng, W.T., Oates, A.S., Tiao-Yuan Huang

“…The authors present a comprehensive set of measurements to assess the impact of plasma processing induced damage on NBTI and hot carrier reliability as a…”
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Identification and Analysis of Dominant Electromigration Failure Modes in Copper/Low-K Dual Damascene Interconnects by Shou-Chung Lee, Oates, A.S.

“…We investigate the electromigration-induced void morphologies that dominate the reliability of Cu/low-k dual damascene vias. We observe that while voids form…”
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