Search Results - "OUACHA, H"
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Laser intensity effects in carrier-envelope phase-tagged time of flight-photoemission electron microscopy
Published in Applied physics. B, Lasers and optics (01-04-2016)“…A time of flight-photoemission electron microscope is combined with a single-shot stereographic above-threshold ionization phase meter for studying attosecond…”
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2
Laser-assisted growth of gold nanoparticles : Shaping and optical characterization
Published in Applied physics. B, Lasers and optics (01-09-2005)“…We demonstrate that supported gold nanoparticles with a given well-defined shape can be produced by laser-assisted growth. For this purpose, gold nanoparticles…”
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3
Noise properties of an individual and two crossing multiwalled carbon nanotubes
Published in Applied physics letters (11-02-2002)“…The noise properties at room temperature of multiwalled carbon nanotubes under forward bias, for frequencies between 10 Hz–10 kHz, have been investigated. The…”
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4
Physico-chemical properties and alteration of Lixus historical monuments building rocks (Larache–Morocco)
Published in Journal of building pathology and rehabilitation (01-12-2022)“…This paper is a contribution to the conservation of the built heritage in Northwestern Morocco, especially the roman acheosite of Lixus in Larache. The aim is…”
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High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1−xGex Schottky junctions
Published in Applied physics letters (19-06-2000)“…We report on the electrical properties of defects introduced by high-energy 5.4 MeV He ions in n-type strained n-SiGe and the impact of this irradiation on the…”
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6
1/ f noise characterization of Ir/ p -Si and Ir/ p -Si1− x Ge x low Schottky barrier junctions
Published in Applied physics letters (14-10-1996)“…The electrical noise properties of Ir/p-Si and Ir/p-Si1−xGex (x=0.14) Schottky junctions have been studied. The 1/f noise measurements were performed under…”
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Two abnormal peaks induced by plasma process in the noise spectra of etched Si and Si/sub 1-x/Ge/sub x
Published in 2000 5th International Symposium on Plasma Process-Induced Damage (IEEE Cat. No.00TH8479) (2000)“…The impact of plasma damage on the flicker noise properties of Ti/p-Si and Ti/p-Si/sub 1-x/Ge/sub x/ (with x=0.05) Schottky junctions is investigated in this…”
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