Search Results - "ORSAL, G"

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaram, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, J.P., Ougazzaden, A.

“…[Display omitted] We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the…”
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Bandgap energy bowing parameter of strained and relaxed InGaN layers by Orsal, G., El Gmili, Y., Fressengeas, N., Streque, J., Djerboub, R., Moudakir, T., Sundaram, S., Ougazzaden, A., Salvestrini, J.P.

“…This paper focuses on the determination of the bandgap energy bowing parameter of strained and relaxed In sub(x)Ga sub(1-x)N layers. Samples are grown by metal…”
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Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications by Abid, M., Moudakir, T., Orsal, G., Gautier, S., En Naciri, A., Djebbour, Z., Ryou, J.-H., Patriarche, G., Largeau, L., Kim, H. J., Lochner, Z., Pantzas, K., Alamarguy, D., Jomard, F., Dupuis, R. D., Salvestrini, J.-P., Voss, P. L., Ougazzaden, A.

“…Highly reflective deep UV distributed Bragg reflectors (DBRs) based on the BAlN material system have been grown by metalorganic vapour phase epitaxy on AlN…”
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Deep structural analysis of novel BGaN material layers grown by MOVPE by Gautier, S., Patriarche, G., Moudakir, T., Abid, M., Orsal, G., Pantzas, K., Troadec, D, Soltani, A., Largeau, L., Mauguin, O., Ougazzaden, A.

“…BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated…”
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Characteristics of the surface microstructures in thick InGaN layers on GaN by Gmili, Y. El, Orsal, G., Pantzas, K., Ahaitouf, A., Moudakir, T., Gautier, S., Patriarche, G., Troadec, D., Salvestrini, J. P., Ougazzaden, A.

“…This paper focuses on a comparative study of optical, morphological, micros tructural and microcompositional properties of typical InGaN samples which exhibit…”
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Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth by Goh, W.H., Patriarche, G., Bonanno, P.L., Gautier, S., Moudakir, T., Abid, M., Orsal, G., Sirenko, A.A., Cai, Z.-H., Martinez, A., Ramdane, A., Le Gratiet, L., Troadec, D., Soltani, A., Ougazzaden, A.

“…Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of…”
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Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE by Orsal, G., Maloufi, N., Gautier, S., Alnot, M., Sirenko, A.A., Bouchaour, M., Ougazzaden, A.

“…In the family of III-nitride compounds, B x Ga 1− x N is particularly attractive because it can be lattice matched to AlN or SiC substrates. In this work we…”
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Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application by Abid, M., Moudakir, T., Djebbour, Z., Orsal, G., Gautier, S., En Naciri, A., Migan-Dubois, A., Ougazzaden, A.

“…B x Ga 1− x N layers as well as B x Ga 1− x N/GaN Distributed Bragg Reflector (DBR) structures were grown, for boron compositions between 0% and 1.3%, by…”
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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials by Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L., Ougazzaden, A.

“…In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a…”
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Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content by Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Sirenko, A.A., Abid, M., Pantzas, K., Ferguson, I.T., Voss, P.L., Ougazzaden, A.

“…BInGaN quaternary alloys with up to 2% boron and 14% of indium have been grown on GaN/sapphire template substrates by metal-organic vapour phase epitaxy…”
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Growth of beta barium borate (β-BaB 2O 4) thin films by injection metal organic chemical vapour deposition by Wersand-Quell, S., Orsal, G., Thévenin, P., Bath, A.

“…Thin films containing beta barium borate (β-BaB 2O 4 so called β-BBO) were grown on silicon (100) substrates by injection metal organic chemical vapour…”
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Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications by ARTAUD-GILLET, M. C, DUCHEMIN, S, ODEDRA, R, ORSAL, G, REGA, N, RUSHWORTH, S, SIEBENTRITT, S

“…Various copper organometallic sources (hexafluoro-acetylacetonato copper complexed with an amine, cyclopentadienyl copper triethyl phosphine and…”
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Photoluminescence study of CuGaSe2 thin films grown on ZnO by MOCVD by ORSAL, G, MAILLY, F, ARTAUD-GILLET, M.-C, DUCHEMIN, S

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Corrigendum to “Evaluation of copper organometallic sources for CuGaSe2 photovoltaic applications” J. Crystal Growth 248 (2002) 163–168 by Artaud-Gillet, M.C., Duchemin, S., Odedra, R., Orsal, G., Rega, N., Rushworth, S., Siebentritt, S.

“…The images in Figs. 2 and 4 have been mixed up. The correct presentation is given…”
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Characterization of CuGaSe(2) thin films grown by MOCVD by Orsal, G, Romain, N, Artaud, M-C, Duchemin, S

“…CuGaSe(2) thin films have been grown by metalorganic chemical vapor deposition (MOCVD), from three organometallic precursors. Samples of about 1-2 mum thick…”
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Multi-layered InGaN/GaN structure versus single InGaN layer for solar cells applications: a comparative study by El Gmili, Y., Orsal, G., Pantzas, K., Moudakir, T., Sundaran, S., Patriarche, G., Hester, J., Ahaitouf, A., Salvestrini, Jean-Paul, Ougazzaden, A.

“…We report a comparison of the morphological, structural and optical properties of both InGaN single-layer and multilayered structures, the latter consisting of…”
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Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy In x Ga 1−x N thin films by Gorge, V., Djebbour, Z., Migan-Dubois, A., Pareige, C., Longeaud, C., Pantzas, K., Moudakir, T., Gautier, S., Orsal, G., Voss, P. L., Ougazzaden, A.

“…We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit…”
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Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films by Gorge, V., Djebbour, Z., Migan-Dubois, A., Pareige, C., Longeaud, C., Pantzas, K., Moudakir, T., Gautier, S., Orsal, G., Voss, P. L., Ougazzaden, A.

“…We report on the crystal quality of metalorganic vapour phase epitaxy-grown InGaN with indium content ranging from 0% to 20%. Absorbance measurements are fit…”
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Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials : Indium Nitride and Related Alloys by PANTZAS, K, PATRIARCHE, G, ORSAL, G, GAUTIER, S, MOUDAKIR, T, ABID, M, GORGE, V, DJEBBOUR, Z, VOSS, P. L, OUGAZZADEN, A

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MOVPE growth of BInGaN quaternary alloys and characterization of B content by Gautier, S., Orsal, G., Moudakir, T., Maloufi, N., Jomard, F., Alnot, M., Djebbour, Z., Abid, M., Voss, P., Ougazzaden, A.

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