Search Results - "OOK SANG YOO"

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    PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Rino Choi, Byoung Hun Lee, Lee, J.C., Hi-Deok Lee, Yoon-Ha Jeong

    Published in IEEE electron device letters (01-04-2008)
    “…Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs)…”
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    Journal Article
  3. 3

    Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor by Choi, Won-Ho, Oh, Jungwoo, Yoo, Ook-Sang, Han, In-Shik, Na, Min-Ki, Kwon, Hyuk-Min, Park, Byung-Suk, Majhi, P., Tseng, H.-H., Jammy, R., Lee, Hi-Deok

    Published in Microelectronic engineering (01-12-2011)
    “…Analyzed herein is the impact of Si interface passivation layer (IPL) on device performance and reliability of Ge-on-Si field-effect transistors with HfSiO/TaN…”
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    Journal Article Conference Proceeding
  4. 4

    Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs by Yoo, Ook Sang, Oh, Jungwoo, Min, Kyung Seok, Kang, Chang Yong, Lee, B.H., Lee, Kyong Taek, Na, Min Ki, Kwon, Hyuk-Min, Majhi, P., Tseng, H-H, Jammy, Raj, Wang, J.S., Lee, Hi-Deok

    Published in Microelectronic engineering (01-03-2009)
    “…The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si…”
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    Journal Article Conference Proceeding
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    Comparison of La-based high- k dielectrics: HfLaSiON and HfLaON by Choi, Won-Ho, Han, In-Shik, Kwon, Hyuk-Min, Goo, Tae-Gyu, Na, Min-Ki, Yoo, Ook-Sang, Lee, Ga-Won, Kang, Chang Yong, Choi, Rino, Song, Seung Chul, Lee, Byoung Hun, Jammy, Raj, Jeong, Yoon-Ha, Lee, Hi-Deok

    Published in Microelectronic engineering (01-03-2009)
    “…For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8 nm ( T inv = 1.2 nm)…”
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    Journal Article Conference Proceeding
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    Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs by Kyung Seok Min, Chang Yong Kang, Ook Sang Yoo, Byoung Jae Park, Sung Woo Kim, Young, C.D., Dawei Heh, Bersuker, G., Byoung Hun Lee, Geun Young Yeom

    “…Sample devices were fabricated with 2.0 nm SiO 2 and 2.5-10.0 nm HfO 2 . Transistor transconductance and gate leakage were used to evaluate PID. BTI and…”
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    Conference Proceeding
  9. 9

    A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain by Kyong Taek Lee, Chang Yong Kang, Ook Sang Yoo, Chadwin, D., Bersuker, G., Ho Kyung Park, Jun Myung Lee, Hyung Sang Hwang, Byoung Hun Lee, Hi-Deok Lee, Yoon-Ha Jeong

    “…Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related…”
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    Conference Proceeding
  10. 10

    Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs by Han-Soo Joo, In-Shik Han, Tae-Kyu Goo, Ook-Sang Yoo, Won-Ho Choi, Ga-Won Lee, Hi-Deok Lee

    “…The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly…”
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    Conference Proceeding
  11. 11

    PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- [Formula Omitted] Dielectrics by Lee, Kyong Taek, Kang, Chang Yong, Yoo, Ook Sang, Choi, Rino, Lee, Byoung Hun, Lee, J.C, Lee, Hi-Deok, Jeong, Yoon-Ha

    Published in IEEE electron device letters (01-04-2008)
    “…Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs)…”
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    Journal Article
  12. 12

    Effects of In Situ [Formula Omitted] Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- [Formula Omitted] Dielectric MOSFETs by Lee, Kyong Taek, Kang, Chang Yong, Ju, Byung Sun, Choi, R, Min, Kyung Seok, Yoo, Ook Sang, Lee, Byoung Hun, Jammy, R, Lee, J.C, Lee, Hi-Deok, Jeong, Yoon-Ha

    Published in IEEE electron device letters (01-06-2008)
    “…The effects of in situ O sub(2) plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was…”
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    Journal Article
  13. 13

    Effects of In Situ \hbox Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- k Dielectric MOSFETs by Kyong Taek Lee, Chang Yong Kang, Byung Sun Ju, Choi, R., Kyung Seok Min, Ook Sang Yoo, Byoung Hun Lee, Jammy, R., Lee, J.C., Hi-Deok Lee, Yoon-Ha Jeong

    Published in IEEE electron device letters (01-06-2008)
    “…The effects of in situ O 2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was…”
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    Journal Article