Search Results - "OOK SANG YOO"
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PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- k Dielectrics
Published in IEEE electron device letters (01-04-2008)“…Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs)…”
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Journal Article -
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Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor
Published in Microelectronic engineering (01-12-2011)“…Analyzed herein is the impact of Si interface passivation layer (IPL) on device performance and reliability of Ge-on-Si field-effect transistors with HfSiO/TaN…”
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Journal Article Conference Proceeding -
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Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
Published in Microelectronic engineering (01-03-2009)“…The effects of a Si capping layer on the device characteristics and negative bias temperature instability (NBTI) reliability were investigated for Ge-on-Si…”
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Journal Article Conference Proceeding -
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Effects of In Situ O2 Plasma Treatment on OFF-State Leakage and Reliability in Metal-Gate/High-k Dielectric MOSFETs
Published in IEEE electron device letters (01-06-2008)Get full text
Journal Article -
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Comparison of La-based high- k dielectrics: HfLaSiON and HfLaON
Published in Microelectronic engineering (01-03-2009)“…For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8 nm ( T inv = 1.2 nm)…”
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Journal Article Conference Proceeding -
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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Published in Materials science & engineering. B, Solid-state materials for advanced technology (05-12-2008)“…We demonstrated the effect of post-metallization annealing and Si interlayer thickness on Ge MOS capacitor on Ge-on-Si substrate with HfO 2/TaN. Ge…”
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Plasma induced damage of aggressively scaled gate dielectric (EOT ≪ 1.0nm) in metal gate/high-k dielectric CMOSFETs
Published in 2008 IEEE International Reliability Physics Symposium (01-04-2008)“…Sample devices were fabricated with 2.0 nm SiO 2 and 2.5-10.0 nm HfO 2 . Transistor transconductance and gate leakage were used to evaluate PID. BTI and…”
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Conference Proceeding -
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A comparative study of reliability and performance of strain engineering using CESL stressor and mechanical strain
Published in 2008 IEEE International Reliability Physics Symposium (01-04-2008)“…Effects of a stressor nitride layer on device performance and reliability are investigated. To decouple intrinsic mechanical stress and process-related…”
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Conference Proceeding -
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Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs
Published in 2006 IEEE Nanotechnology Materials and Devices Conference (01-10-2006)“…The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly…”
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Conference Proceeding -
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PBTI-Associated High-Temperature Hot Carrier Degradation of nMOSFETs With Metal-Gate/High- [Formula Omitted] Dielectrics
Published in IEEE electron device letters (01-04-2008)“…Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs)…”
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Journal Article -
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Effects of In Situ [Formula Omitted] Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- [Formula Omitted] Dielectric MOSFETs
Published in IEEE electron device letters (01-06-2008)“…The effects of in situ O sub(2) plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was…”
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Journal Article -
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Effects of In Situ \hbox Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- k Dielectric MOSFETs
Published in IEEE electron device letters (01-06-2008)“…The effects of in situ O 2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was…”
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Journal Article