Search Results - "ONO, Y. A"

First-principles study of atomic wires on a H-terminated Si(100)-(2 × 1) surface by Watanabe, S., Ono, Y.A., Hashizume, T., Wada, Y.

“…The atomic and electronic structures of several atomic wires have been examined using first-principles calculations within the local density functional…”
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High performance low-temperature poly-Si n-channel TFTs for LCD by Mimura, A., Konishi, N., Ono, K., Ohwada, J.-I., Hosokawa, Y., Ono, Y.A., Suzuki, T., Miyata, K., Kawakami, H.

“…High-performance poly-Si TFTs were fabricated by a low-temperature 600 degrees C process utilizing hard glass substrates. To achieve low threshold voltage…”
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Accumulation of cell cycle regulatory proteins, p21 and p27, induced after hyperthermia in human glioma cells by Abe, T, Tamiya, T, Ono, Y, Salker, A H, Akiyama, K, Ohmoto, T

“…It was investigated whether there was a relationship between p53 p21 and p27 induction pathways in the cellular response of glioma cells to hyperthermia. Two…”
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Electron Microscopy Study on Magnetic Flux Lines in Superconductors: Memorial to Akira Tonomura by Harada, K., Osakabe, N., Ono, Y. A.

“…Using electron holography and coherent beam Lorentz microscopy, Akira Tonomura investigated the physics of magnetic flux lines, or vortices, in metal and…”
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Theoretical study of Ga adsorbates around dangling-bond wires on an H-terminated Si surface : Possibility of atomic-scale ferromagnets by WATANABE, S, ICHIMURA, M, ONOGI, T, ONO, Y. A, HASHIZUME, T, WADA, Y

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Theory of the low-temperature Seebeck coefficient in dilute alloys by Ono, Y. A., Taylor, P. L.

“…The Seebeck coefficient in dilute alloys at low temp. is investigated in a simple model in which free electrons are scattered by a random array of fixed…”
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Peripheral circuit integrated poly-Si TFT LCD with gray scale representation by Ohwada, J.-I., Takabatake, M., Ono, Y.A., Mimura, A., Ono, K., Konishi, N.

“…A 3.3-in.-diagonal fully integrated low-temperature (<600 degrees C) processed polycrystalline silicon (poly-Si) thin-film transistor (TFT) liquid-crystal…”
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Transferred charge in the active layer and EL device characteristics of TFEL cells by ONO, Y. A, KAWAKAMI, H, FUYAMA, M, ONISAWA, K

“…The relationship between transferred charge in the active layer of a thin-film electroluminescent (TFEL) cell and EL device characteristics has been…”
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Theory of the low-temperature Seebeck coefficient in dilute alloys. II. The empty-core pseudopotential calculation by Ono, Y. A.

“…The Seebeck coefficient S in dilute alloys at low temp. is calculated for an impurity scattering potential derived from the empty-core pseudopotential. In the…”
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Effects of oxygen in CaS : Eu active layers on emission properties of thin film electroluminescent cells by ABE, Y, ONISAWA, K.-I, ONO, Y. A, HANAZONO, M

“…CaS:Eu active layers for thin film electroluminescent (TFEL) cells were deposited by the electron beam evaporation method under several partial pressures of…”
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MATERIALS FOR FULL-COLOR ELECTROLUMINESCENT DISPLAYS by Ono, Yoshimasa A

“…New thin-film electroluminescent (EL) materials with blue and broadband emissions recently have been developed that meet the phosphor requirements for…”
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White light emitting thin film electroluminescent cells with SrS:Pr,Ce active layer and their application to multicolor electroluminescent devices by ABE, Y, ONISAWA, K, TAMURA, K, NAKAYAMA, T, HANAZONO, M, ONO, Y. A

“…White light emission with a maximum luminance of 950 cd/m 2 under a 1 kHz sinusoidal wave drive condition was obtained from a SrS:Pr,Ce thin film…”
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Electroluminescence in CaO : Eu thin film by ABE, Y, ONISAWA, K.-I, ONO, Y. A, HANAZONO, M

“…A CaO:Eu thin film electroluminescent (EL) cell was fabricated and its EL characteristics were studied. A sharp emission at 595 nm, a weak emission around 620…”
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CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600°C by TAKABATAKE, M, OHWADA, J.-I, ONO, Y. A, ONO, K, MIMURA, A, KONISHI, N

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CMOS circuits for peripheral circuit integrated poly-Si TFT LCDfabricated at low temperature below 600 deg C by Takabatake, M, Ohwada, J, Ono, Y A, Ono, K, Mimura, A, Konishi, N

“…CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCDs were fabricated at…”
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CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degree C by Takabatake, M, Ohwada, J-I, Ono, Y A, Ono, K, Mimura, A, Konishi, N

“…CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCD's were fabricated at low…”
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CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C by Takabatake, M., Ohwada, J., Ono, Y.A., Ono, K., Mimura, A., Konishi, N.

“…CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCDs were fabricated at…”
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Electronic structure of an atomic wire on a hydrogen-terminated Si(111) surface: First-principles study by Watanabe, S, Ono, YA, Hashizume, T, Wada, Y, Yamauchi, J, Tsukada, M

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High-performance low-temperature poly-Si TFTs for LCD by Mimura, A., Konishi, N., Ono, K., Ohwada, J., Hosokawa, Y., Ono, Y.A., Suzuki, T., Miyata, K., Kawakami, H.

“…High-performance low-temperature poly-Si TFTs were developed by a 600°C process so that a glass substrate could be utilized. To achieve low threshold voltage…”
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Theoretical study of atomic and electronic structures of atomic wires on an H-terminated Si(100)2 x 1 surface by Watanabe, S, Ono, YA, Hashizume, T, Wada, Y

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