Search Results - "OK, I. J"

A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique by Akbar, M.S., Choi, C.H., Rhee, S.J., Krishnan, S.A., Kang, C.Y., Zhang, M.H., Lee, T., Ok, I.J., Zhu, F., Kim, H.-S., Lee, J.C.

“…A novel stress-anneal approach has been investigated to separate the role of electrons and hole charge trappings in Hf-based gate oxides. It is observed that…”
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Electrical performance and reliability improvement by using compositionally varying bi-layer structure of PVD HfSixOy dielectric by AKBAR, Mohammad S, CHOI, C. H, LEE, Jack C, RHEE, S. J, KRISHNAN, S. A, KANG, C. Y, ZHANG, M. H, LEE, T, OK, I. J, ZHU, F, KIM, H.-S

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Improved electrical and material characteristics of HfTaO gate dielectrics with high crystallization temperature by Zhang, M. H., Rhee, S. J., Kang, C. Y., Choi, C. H., Akbar, M. S., Krishnan, S. A., Lee, T., Ok, I. J., Zhu, F., Kim, H. S., Lee, Jack C.

“…N -type metal-oxide-semiconductor field-effect transistors ( N -MOSFETs) using HfTaO with varying Ta composition (20%, 30%, 40%, and 50%) have been fabricated…”
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Fluorine passivation-in gate stacks of poly-Si/TaN/HfO2 (and HfSiON/HfO2)/Si through gate ion implantation by ZHANG, M. H, ZHU, F, KIM, H. S, OK, I. J, LEE, Jack C

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Early and advanced stages in palindromic rheumatism patients: Test characteristics of three classification criteria and discrimination potential by Myong-hak, R., Po-hum, R., Song-phil, P., Yong-jin, R., Paek-hwa, K., Ok-i, J.

“…It is to identify the classification characteristics of diagnostic criteria in the early (≤3 year) and advanced stage (>3 year) of palindromic rheumatism (PR)…”
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Characteristics of sputtered Hf1−xSixO2∕Si∕GaAs gate stacks by Zhang, M. H., Ok, I. J., Kim, H. S., Zhu, F., Lee, T., Thareja, G., Yu, L., Lee, Jack C.

“…Sputtered Hf1−xSixO2∕Si∕n-type GaAs gate stacks with x=0, 30%, and 47% have been characterized using x-ray photoelectron spectroscopy, photoluminescence, and…”
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Fluorine passivation in poly-Si∕TaN∕HfO2 through ion implantation by Zhang, M. H., Zhu, F., Lee, T., Kim, H. S., Ok, I. J., Thareja, G., Yu, L., Lee, Jack C.

“…Fluorine (F) passivation in poly-Si∕TaN∕HfO2∕p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was…”
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Fluorine passivation in poly- Si ∕ Ta N ∕ Hf O 2 through ion implantation by Zhang, M. H., Zhu, F., Lee, T., Kim, H. S., Ok, I. J., Thareja, G., Yu, L., Lee, Jack C.

“…Fluorine (F) passivation in poly- Si ∕ Ta N ∕ Hf O 2 ∕ p - Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN…”
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Characteristics of sputtered Hf 1 − x Si x O 2 ∕ Si ∕ Ga As gate stacks by Zhang, M. H., Ok, I. J., Kim, H. S., Zhu, F., Lee, T., Thareja, G., Yu, L., Lee, Jack C.

“…Sputtered Hf 1 − x Si x O 2 ∕ Si ∕ n -type GaAs gate stacks with x = 0 , 30%, and 47% have been characterized using x-ray photoelectron spectroscopy,…”
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Fluorine Passivation in Gate Stacks of Poly- \hbox/\hbox/\hbox (and \hbox/\hbox)/\hbox Through Gate Ion Implantation by Zhang, M.H., Zhu, F., Kim, H.S., Ok, I.J., Lee, J.C.

“…Fluorine passivation in poly-Si/TaN/HfO 2 /p-Si and poly-Si/TaN/HfSiON/HfO 2 /p-Si gate stacks with varying TaN thickness through gate ion implantation has…”
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Fluorine Passivation in Gate Stacks of Poly-[Formula Omitted] (and [Formula Omitted] Through Gate Ion Implantation by Zhang, M.H, Zhu, F, Kim, H.S, Ok, I.J, Lee, J.C

“…Fluorine passivation in poly-Si/TaN/HfO sub(2)/p-Si and poly-Si/TaN/HfSiON/HfO sub(2)/p-Si gate stacks with varying TaN thickness through gate ion implantation…”
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Metal Gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer by OK, Injo, KIM, Hyoung-Sub, LEE, Jack C, MANHONG ZHANG, KANG, Chang-Yong, SE JONG RHEE, CHOI, Changhwan, KRISHNAN, Siddarth A, LEE, Tackhwi, FENG ZHU, THAREJA, Gaurav

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Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi sub(x)O sub(y) dielectric by Akbar, MS, Choi, CH, Rhee, S J, Krishnan, SA, Kang, CY, Zhang, M H, Lee, T, Ok, I J, Zhu, F, Kim, H-S, Lee, J C

“…The effect of a bi-layer structure by varying the Hf composition in Hf-silicate dielectric in improving the electrical performance and reliability of high-…”
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Electrical performance and reliability improvement by using compositionally varying bi-Layer structure of PVD HfSi/sub x/O/sub y/ dielectric by Akbar, M.S., Choi, C.H., Rhee, S.J., Krishnan, S.A., Kang, C.Y., Zhang, M.H., Lee, T., Ok, I.J., Zhu, F., Kim, H.-S., Lee, J.C.

“…The effect of a bi-layer structure by varying the Hf composition in Hf-silicate dielectric in improving the electrical performance and reliability of high-/spl…”
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