Search Results - "OATES, A. S"

Copper stress migration at narrow metal finger with wide lead by Wang, Robin C.J., Chang-Liao, K.S., Oates, A.S., Lee, C.C., Chen, L.D., Chiu, C.C., Wu, Kenneth

“…Copper stress migration (SM) at narrow metal finger connected with wide lead is investigated in this work. Voiding phenomenon is explored with respect to…”
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Effect of annealing on the surface microstructural evolution and the electromigration reliability of electroplated Cu films by KANG, S. H, OBENG, Y. S, DECKER, M. A, OH, M, MERCHANT, S. M, KARTHIKEYAN, S. K, SEET, C. S, OATES, A. S

“…This paper presents the effects of annealing, performed over a temperature range from 200 degree C to 400 degree C, on the surface microstructural evolution…”
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Effect of cracks in TiN anti-reflection coating layers on early via electromigration failure by Huang, J.S, Oates, A.S, Zhao, J

“…Early electromigration failure has been recognized as a generic phenomenon in W-plug via structures. Previous studies have attributed early failure to the…”
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Impact of post via-etch cleans on mechanical reliability of W-plug vias by Obeng, Y.S., Kang, S.H., Huang, J.S., Oates, A.S., Lin, X., Obeng, J.S.

“…Tungsten (W)-plug via failure in multi-level interconnects is one of the key reliability issues, due to electromigration and stress migration concerns…”
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Current density dependence of electromigration failure of submicron width, multilayer Al alloy conductors by Oates, A. S.

“…Electromigration failure of Al alloy metallization systems is one of the main concerns for integrated circuit reliability as feature sizes are reduced into the…”
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Electromigration subjected to Joule heating under pulsed DC stress by Wu, W., Yuan, J.S., Kang, S.H., Oates, A.S.

“…This article reports an electromigration-lifetime model that incorporates the effect of Joule heating under pulsed DC condition. This median-time-to-failure…”
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Design optimization of stacked layer dielectrics for minimum gate leakage currents by Zhang, J, Yuan, J.S, Ma, Y, Oates, A.S

“…An effective model to evaluate the leakage currents for different stacked gates deep submicron MOS transistors is presented. For a given equivalent oxide…”
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Reliability limitations to the scaling of porous low-k dielectrics by Shou-Chung Lee, Oates, A S

“…We show that processes used to fabricate advanced porous dielectrics can exhibit reliability approaching the intrinsic capability of the material. Combining…”
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Electromigration failure distributions of dual damascene Cu /low – k interconnects by Oates, A.S., Lee, S.C.

“…The reliability of dual damascene Cu/low – k interconnects is limited by electromigration – induced void formation at vias. In this paper we investigate via…”
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Reliability of porous low-k dielectrics under dynamic voltage stressing by Shou-Chung Lee, Oates, A. S.

“…We investigate porous low-k SiCOH under dynamic voltage stress to provide new insights into electrical breakdown. Our results are consistent with the existence…”
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Modeling of direct tunneling and surface roughness effects on C–V characteristics of ultra-thin gate MOS capacitors by Zhang, J.-L., Yuan, J.S., Ma, Y., Oates, A.S.

“…Effects of direct tunneling and surface roughness on the capacitance–voltage characteristics of ultra-thin gate deep submicron MOS transistors have been…”
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On the dispersion of electromigration failure times of Al alloy contacts to silicon by Oates, A. S.

“…Electromigration failure data for integrated circuit metallizations may only be collected in experimentally convenient intervals by the use of highly…”
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Comparative study on the effect of misalignment on bordered and borderless contacts by HUANG, J. S, OATES, A. S, KANG, S. H, SHOFNER, T. L, ASHTON, R. A, OBENG, Y. S

“…Continued shrinking of feature sizes in integrated circuits has raised increasing reliability concern. In order to achieve higher packing density,…”
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Electromigration mechanisms in Cu nano-wires by Lin, M H, Lee, S C, Oates, A S

“…In this article, we propose a new drift velocity technique to measure electromigration at temperatures of 125°C to directly assess electromigration transport…”
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Experimental evaluation of device degradation subject to oxide soft breakdown by Zhang, J, Yuan, J.S, Ma, Y, Chen, Y, Oates, A.S

“…Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and…”
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Void nucleation and growth contributions to the critical current density for failure of Cu vias by Oates, A.S., Lin, M.H.

“…We investigate the critical current density for electromigration failure, j c , as a function of voiding failure mode for Cu dual damascene vias. We…”
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Resistance characterization of Cu stress-induced void migration at narrow metal finger connected with wide lead by Wang, Robin C.J., Chang-Liao, K.S., Wang, T.K., Lee, C.C., Lin, J.H., Oates, A.S., Lee, S.C., Wu, Kenneth

“…In this work, copper stress-induced voiding (SIV) at narrow metal finger connected with wide lead is investigated. Three failure modes are explored and…”
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Involvement of oxygen-vacancy defects in enhancing oxygen diffusion in silicon by OATES, A. S, NEWMAN, R. C

“…We have proposed previously that the extremely high rate of single diffusion jumps of oxygen atoms in silicon during electron irradiation of crystals above 300…”
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Investigating the electro-thermal origin of breakdown in low-K/Cu dielectrics under short duration over stressed pulsed regime by Chatterjee, Amitabh, Brewer, Forrest, Lee, S C, Oates, A S

“…We present a detailed study of low-K/Cu structures under short duration pulse regime and establish a microscopic understanding of breakdown behavior under high…”
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A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors by De Souza, M.M., Wang, J., Manhas, S., Sankara Narayanan, E.M., Oates, A.S.

“…This paper reports the early stage of dc hot carrier degradation behaviour of n-channel low doped drain metal oxide semiconductor field effect transistors in a…”
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