Search Results - "Ożga, Monika"
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Electrical and Structural Properties of Semi-Polar-ZnO/a-Al2O3 and Polar-ZnO/c-Al2O3 Films: A Comparative Study
Published in Materials (23-12-2022)“…In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a–(100) and c–(001) oriented Al2O3 substrate are…”
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Titanium Nitride as a Plasmonic Material from Near-Ultraviolet to Very-Long-Wavelength Infrared Range
Published in Materials (22-11-2021)“…Titanium nitride is a well-known conductive ceramic material that has recently experienced resumed attention because of its plasmonic properties comparable to…”
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Catalytic Removal of NOx on Ceramic Foam-Supported ZnO and TiO2 Nanorods Ornamented with W and V Oxides
Published in Energies (Basel) (01-03-2022)“…Energy consumption steadily increases and energy production is associated with many environmental risks, e.g., generating the largest share of greenhouse gas…”
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Magnetron Sputtering as a Solvent-Free Method for Fabrication of Nanoporous ZnO Thin Films for Highly Efficient Photocatalytic Organic Pollution Degradation
Published in Compounds (01-09-2024)“…Zinc oxide (ZnO) is one of the most versatile semiconductor materials with many potential applications. Understanding the interactions between the surface…”
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Impact of GaAs(100) surface preparation on EQE of AZO/Al2O3/p-GaAs photovoltaic structures
Published in Beilstein journal of nanotechnology (2021)“…In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments…”
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Optimization of Ultra-Thin Pulsed-DC Magnetron Sputtered Aluminum Films for the Technology of Hyperbolic Metamaterials
Published in Crystals (Basel) (01-05-2020)“…The future applications of hyperbolic metamaterials demand stacks of materials with alternative ultra-thin conductive/dielectric films with good homogeneity of…”
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Hydrothermally formed copper oxide (CuO) thin films for resistive switching memory devices
Published in Solid-state electronics (01-08-2022)“…•An innovative method of hydrothermal formation of CuO films adopted to MIM structures.•Distinct changes in structural and optical properties of ‘as grown’ and…”
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Structural Properties of Thin ZnO Films Deposited by ALD under O-Rich and Zn-Rich Growth Conditions and Their Relationship with Electrical Parameters
Published in Materials (20-07-2021)“…The structural, optical, and electrical properties of ZnO are intimately intertwined. In the present work, the structural and transport properties of 100 nm…”
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9.1% efficient zinc oxide/silicon solar cells on a 50 μm thick Si absorber
Published in Beilstein journal of nanotechnology (21-07-2021)“…Today, silicon solar cells (amorphous films and wafer-based) are a main source of green energy. These cells and their components are produced by employing…”
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Effect of repeating hydrothermal growth processes and rapid thermal annealing on CuO thin film properties
Published in Beilstein journal of nanotechnology (24-06-2024)“…This paper presents an investigation into the influence of repeating cycles of hydrothermal growth processes and rapid thermal annealing (HT+RTA) on the…”
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Electrical and Structural Properties of Semi-Polar-ZnO/ a -Al 2 O 3 and Polar-ZnO/ c -Al 2 O 3 Films: A Comparative Study
Published in Materials (23-12-2022)“…In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on -(100) and -(001) oriented Al O substrate are…”
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12
Electrical and Structural Properties of Semi-Polar-ZnO/Ia/I-Al[sub.2]O[sub.3] and Polar-ZnO/Ic/I-Al[sub.2]O[sub.3] Films: A Comparative Study
Published in Materials (01-12-2022)“…In this work, the properties of ZnO films of 100 nm thickness, grown using atomic layer deposition (ALD) on a-(100) and c-(001) oriented Al[sub.2]O[sub.3]…”
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13
Impact of GaAs(100) surface preparation on EQE of AZO/Al 2 O 3 /p-GaAs photovoltaic structures
Published in Beilstein journal of nanotechnology (28-06-2021)“…In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments…”
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