Search Results - "O, Kenneth K."

Active Terahertz Imaging Using Schottky Diodes in CMOS: Array and 860-GHz Pixel by Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Shichijo, Hisashi, Afshari, Ehsan, Kenneth, K. O.

“…Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications. Using a compact…”
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300-GHz Double-Balanced Up-Converter Using Asymmetric MOS Varactors in 65-nm CMOS by Chen, Zhiyu, Choi, Wooyeol, Kenneth, K. O

“…A 270-300-GHz double-balanced up-converter fabricated in 65-nm CMOS is presented. The up-converter is the first to employ accumulation mode MOS asymmetric…”
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Subarray-SHORT De-Embedding for Improving Accuracy of On-Wafer Measurements of Devices for Millimeter and Submillimeter-Wave Applications by Pouya, Behnam, Singh, Suren, O, Kenneth K.

“…A de-embedding technique for high-<inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula> or high-cutoff frequency (<inline-formula>…”
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A 10-Gb/s 180-GHz Phase-Locked-Loop Minimum Shift Keying Receiver by Dong, Shenggang, Momson, Ibukunoluwa, Kshattry, Sandeep, Yelleswarapu, Pavan, Choi, Wooyeol, O, Kenneth K.

“…A 180-GHz minimum shift keying (MSK) receiver (RX) using a phase-locked loop (PLL), which self-synchronizes the carrier frequency, is demonstrated. The…”
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Phase Noise Reduction in LC VCO's Using an Array of Cross-Coupled Nanoscale MOSFETs and Intelligent Post-Fabrication Selection by Yelleswarapu, Pavan, Jha, Amit, Willis, Richard, Makris, Yiorgos, O, Kenneth K.

“…Low-frequency mymargin noise, thermal noise, and dc characteristics of nanoscale MOS transistors with dimensions close to the process minimum are highly…”
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21.5-to-33.4 GHz Voltage-Controlled Oscillator Using NMOS Switched Inductors in CMOS by Jing Zhang, Sharma, Navneet, O, Kenneth K.

“…To demonstrate the applicability of NMOS switched variable inductors in the millimeter wave frequencies, a 21.5 to 33.4 GHz wide tuning range LC…”
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Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits by Choi, Wooyeol, O, Kenneth K.

“…Over the past 15 years, the output power of silicon submillimeter-wave electronics has increased by a factor greater than 1000 reaching −3.9 dBm at 440 GHz for…”
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Approaches to Area Efficient High-Performance Voltage-Controlled Oscillators in Nanoscale CMOS by Jha, Amit, Yelleswarapu, Pavan, Liao, Ken, Yeap, Geoffrey, Kenneth, K. O.

“…By optimizing the design of the inductor of a voltage-controlled oscillator for performance without the area constraint and fully filling the area underneath…”
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Millimeter-wave voltage-controlled oscillators in 0.13-μm CMOS technology by CHANGHUA CAO, O, Kenneth K

“…This paper describes the design of CMOS millimeter-wave voltage controlled oscillators. Varactor, transistor, and inductor designs are optimized to reduce the…”
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A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS by Ruonan Han, Yaming Zhang, Coquillat, D., Videlier, H., Knap, W., Brown, E., O, Kenneth K.

“…A 2×2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna (255 × 250 μm 2 ) is fabricated in a 130-nm logic CMOS process. The…”
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Low-Cost Packaging of 300 GHz Integrated Circuits With an On-Chip Patch Antenna by Bakshi, Harshpreet S., Byreddy, Pranith R., O, Kenneth. K., Blanchard, A., Lee, Mark, Tuncer, Enis, Choi, Wooyeol

“…Placing a 300 GHz on-chip patch antenna in a low-cost quad-flat no-lead (QFN) package using materials based on silica microparticles dispersed in an epoxy…”
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426-GHz Concurrent Transceiver Pixel in 65-nm CMOS for Active Imaging by Zhu, Yukun, Byreddy, Pranith Reddy, O, Kenneth K., Choi, Wooyeol

“…This article demonstrates a 426-GHz concurrent transceiver imaging pixel in 65-nm CMOS that can be scaled to form a two-dimensional focal plane array. The…”
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Design and Demonstration of 820-GHz Array Using Diode-Connected NMOS Transistors in 130-nm CMOS for Active Imaging by Kim, Dae Yeon, Park, Shinwoong, Han, Ruonan, Kenneth, K.O.

“…An 820-GHz 8 × 8 diode-connected NMOS transistor active imaging array with an on-chip pixel selection circuit was demonstrated in a 130-nm CMOS technology. The…”
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Compact Diode Connected MOSFET Detector for On-Chip Millimeter-Wave Voltage Measurements by Kshattry, Sandeep, Choi, Wooyeol, Yu, Chikuang, Kenneth, K.O.

“…A root-mean-square diode connected MOSFET detector for estimating the signal voltage of internal nodes of millimeter-wave circuits is demonstrated. These…”
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Generation of High Data Rate MSK-Modulated 180-GHz Signals by Chen, Zhe, Dong, Shenggang, Chen, Zhiyu, Choi, Wooyeol, Kshattry, Sandeep, Momson, Ibukun, Zhong, Qian, O. K., Kenneth

“…High data rate 180-GHz minimum shift keying (MSK)-modulated signals for dielectric waveguide communication with an output power of -3.5 dBm are demonstrated…”
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Reduction of Low Frequency Noise Impact to Terahertz Detectors in CMOS by Kim, Dae Yeon, K.O., Kenneth

“…Variation of low frequency noise including 1/f noise and Lorentzian spectra is the dominant source of variations for noise equivalent power (NEP) of THz…”
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Technique for Integration of a Wireless Switch in a 2.4 GHz Single Chip Radio by Lerdsitsomboon, W, Kenneth, K O

“…Abstract-A technique for integrating a wireless switch into an M&M™ sized radio operating at 2.4 GHz that can turn a radio on or off is demonstrated using a…”
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425-to-25-GHz CMOS-Integrated Downconverter by Momson, Ibukunoluwa, Lee, Suhwan, Dong, Shenggang, Kenneth, K. O

“…An integrated 425-GHz radio frequency (RF) to 25-GHz intermediate frequency (IF) second-order subharmonic downconverter, including an on-chip 8X local…”
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A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells by Xu, Haifeng, Kenneth, K.O.

“…A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of 29 dB is demonstrated. The…”
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Symmetric Varactor in 130-nm CMOS for Frequency Multiplier Applications by Dongha Shim, Kenneth, K O

“…A symmetric varactor (SVAR) in 130-nm digital complementary metal-oxide-semiconductor (CMOS) for frequency multiplier applications with the maximum cutoff…”
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